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STT3930N-VB Product details
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STT3930N-VB MOSFET Product Introduction
The STT3930N-VB is a dual N-channel MOSFET in a SOT23-6 package, designed for low-voltage, high-efficiency switching applications. With a maximum drain-source voltage (VDS) of 20V and a maximum drain current (ID) of 6A, the product is suitable for electronic circuits that require small size and high switching efficiency. Manufactured with Trench technology, the STT3930N-VB provides a low on-resistance of 28mΩ at VGS=2.5V and 22mΩ at VGS=4.5V, ensuring that it can provide excellent current control and efficient power management during operation.
The threshold voltage (Vth) range of the STT3930N-VB is 0.5V to 1.5V, which makes it suitable for low-voltage control circuits such as 3.3V and 5V systems. This MOSFET can be widely used in high-efficiency power management, load switching, and miniaturized electronic products, especially suitable for portable devices, battery management systems and low-power electronic circuits.
The STT3930N-VB is a dual N-channel MOSFET in a SOT23-6 package, designed for low-voltage, high-efficiency switching applications. With a maximum drain-source voltage (VDS) of 20V and a maximum drain current (ID) of 6A, the product is suitable for electronic circuits that require small size and high switching efficiency. Manufactured with Trench technology, the STT3930N-VB provides a low on-resistance of 28mΩ at VGS=2.5V and 22mΩ at VGS=4.5V, ensuring that it can provide excellent current control and efficient power management during operation.
The threshold voltage (Vth) range of the STT3930N-VB is 0.5V to 1.5V, which makes it suitable for low-voltage control circuits such as 3.3V and 5V systems. This MOSFET can be widely used in high-efficiency power management, load switching, and miniaturized electronic products, especially suitable for portable devices, battery management systems and low-power electronic circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
STT3930N-VB MOSFET detailed parameter description
- **Model**: STT3930N-VB
- **Package**: SOT23-6
- **Configuration**: Dual N-channel MOSFET (Dual-N+N-Channel)
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench (trench technology)
- **Operating temperature range**: -55°C To 150°C (typical)
- **Model**: STT3930N-VB
- **Package**: SOT23-6
- **Configuration**: Dual N-channel MOSFET (Dual-N+N-Channel)
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench (trench technology)
- **Operating temperature range**: -55°C To 150°C (typical)
Domain and module applications：
Application fields and modules of STT3930N-VB MOSFET
#### 1. **Power management and DC-DC converter**
STT3930N-VB is suitable for efficient power management systems, especially for DC-DC converters, buck and boost circuits. Its low on-resistance enables this MOSFET to improve conversion efficiency and reduce energy loss, making it suitable for portable electronic products and low-power devices.
**Example**: In the battery charging module of portable devices (such as smartphones, tablets, etc.), STT3930N-VB can be used as an efficient switching element to provide stable current and voltage conversion to ensure high efficiency during battery charging.
#### 2. **Load switch and battery protection**
STT3930N-VB can be used for low-voltage load switches and battery protection circuits. As a switching element, it can effectively control the start and stop of the battery, prevent dangers such as overcharging, over-discharging and short circuit, and protect the battery from damage.
**Example**: In the battery management system of power tools or wireless audio, STT3930N-VB can be used as a load switch to ensure that the battery provides power within the safe operating range and prolong the battery life.
#### 3. **LED drive and display control**
This MOSFET can be used as a switching element in the LED drive circuit, especially suitable for efficient driving and regulation in small power modules. Its low on-resistance and high current carrying capacity enable it to provide stable and efficient driving current for LEDs.
**Example**: In low-power LED lighting systems, STT3930N-VB can be used as a current control switch element to provide precise current regulation to ensure the stability and efficiency of the LED lighting system.
#### 4. **Small power module and load drive**
The small package and high efficiency of STT3930N-VB make it very suitable for low-voltage load drive applications. It can drive small loads such as battery-powered wireless sensors, micro motors, and other low-power electronic devices.
**Example**: In wireless sensor networks, the STT3930N-VB can be used as a load switch to control the power on and off of sensor modules to ensure efficient operation of the system.
#### 5. **Portable devices and battery-powered systems**
Due to its low on-resistance and high efficiency, the STT3930N-VB is an ideal choice for portable devices and battery-powered systems. It can provide efficient power conversion and can carry large currents to ensure stable system operation.
**Example**: In the power management circuit of smart home devices or portable battery packs, the STT3930N-VB can be used for power switching and current control to optimize the system's power consumption performance and extend battery life.
### Summary
STT3930N-VB MOSFET, with its low on-resistance, high current carrying capacity and applicable low voltage control characteristics, is widely used in power management, load switching, LED driving, load driving and battery protection and other fields. Its SOT23-6 package enables it to perform well in space-constrained miniaturized electronic products and is an indispensable core component in low-power, high-efficiency power supply systems.
#### 1. **Power management and DC-DC converter**
STT3930N-VB is suitable for efficient power management systems, especially for DC-DC converters, buck and boost circuits. Its low on-resistance enables this MOSFET to improve conversion efficiency and reduce energy loss, making it suitable for portable electronic products and low-power devices.
**Example**: In the battery charging module of portable devices (such as smartphones, tablets, etc.), STT3930N-VB can be used as an efficient switching element to provide stable current and voltage conversion to ensure high efficiency during battery charging.
#### 2. **Load switch and battery protection**
STT3930N-VB can be used for low-voltage load switches and battery protection circuits. As a switching element, it can effectively control the start and stop of the battery, prevent dangers such as overcharging, over-discharging and short circuit, and protect the battery from damage.
**Example**: In the battery management system of power tools or wireless audio, STT3930N-VB can be used as a load switch to ensure that the battery provides power within the safe operating range and prolong the battery life.
#### 3. **LED drive and display control**
This MOSFET can be used as a switching element in the LED drive circuit, especially suitable for efficient driving and regulation in small power modules. Its low on-resistance and high current carrying capacity enable it to provide stable and efficient driving current for LEDs.
**Example**: In low-power LED lighting systems, STT3930N-VB can be used as a current control switch element to provide precise current regulation to ensure the stability and efficiency of the LED lighting system.
#### 4. **Small power module and load drive**
The small package and high efficiency of STT3930N-VB make it very suitable for low-voltage load drive applications. It can drive small loads such as battery-powered wireless sensors, micro motors, and other low-power electronic devices.
**Example**: In wireless sensor networks, the STT3930N-VB can be used as a load switch to control the power on and off of sensor modules to ensure efficient operation of the system.
#### 5. **Portable devices and battery-powered systems**
Due to its low on-resistance and high efficiency, the STT3930N-VB is an ideal choice for portable devices and battery-powered systems. It can provide efficient power conversion and can carry large currents to ensure stable system operation.
**Example**: In the power management circuit of smart home devices or portable battery packs, the STT3930N-VB can be used for power switching and current control to optimize the system's power consumption performance and extend battery life.
### Summary
STT3930N-VB MOSFET, with its low on-resistance, high current carrying capacity and applicable low voltage control characteristics, is widely used in power management, load switching, LED driving, load driving and battery protection and other fields. Its SOT23-6 package enables it to perform well in space-constrained miniaturized electronic products and is an indispensable core component in low-power, high-efficiency power supply systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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