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STT3808NE-VB Product details
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STT3808NE-VB MOSFET Product Introduction
The STT3808NE-VB is a dual N-channel MOSFET in a SOT23-6 package, suitable for low-voltage, high-efficiency power management and load switching applications. It has a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±12V, and a threshold voltage (Vth) range of 0.5V to 1.5V, enabling it to operate at a lower gate voltage, thereby reducing power consumption. The on-resistance (RDS(ON)) of the STT3808NE-VB is 28mΩ (VGS=2.5V) and 22mΩ (VGS=4.5V), ensuring low power consumption and high efficiency performance, suitable for battery-driven devices and applications requiring high switching frequencies.
This MOSFET uses Trench technology, with low switching losses and high efficiency, suitable for use in miniaturized and low-power designs. Its maximum drain current (ID) is 6A, which can meet the needs of most consumer electronics and low-power control circuits.
The STT3808NE-VB is a dual N-channel MOSFET in a SOT23-6 package, suitable for low-voltage, high-efficiency power management and load switching applications. It has a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±12V, and a threshold voltage (Vth) range of 0.5V to 1.5V, enabling it to operate at a lower gate voltage, thereby reducing power consumption. The on-resistance (RDS(ON)) of the STT3808NE-VB is 28mΩ (VGS=2.5V) and 22mΩ (VGS=4.5V), ensuring low power consumption and high efficiency performance, suitable for battery-driven devices and applications requiring high switching frequencies.
This MOSFET uses Trench technology, with low switching losses and high efficiency, suitable for use in miniaturized and low-power designs. Its maximum drain current (ID) is 6A, which can meet the needs of most consumer electronics and low-power control circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
Detailed parameter description
- **Package**: SOT23-6
- **Configuration**: Dual-N+N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ (VGS=2.5V)
- 22mΩ (VGS=4.5V)
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench technology
- **Package**: SOT23-6
- **Configuration**: Dual-N+N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ (VGS=2.5V)
- 22mΩ (VGS=4.5V)
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Low-power battery-powered devices**:
Due to the low threshold voltage and low on-resistance of the STT3808NE-VB, it is very suitable for low-power battery-powered devices. This MOSFET can achieve efficient switching at lower voltages, reduce battery loss, and is widely used in smart homes, wearable devices, portable battery-powered devices and other fields. In these devices, the STT3808NE-VB can be used as a switching element in the power management module to optimize battery efficiency and extend battery life.
2. **DC-DC converters**:
Due to its low on-resistance and low switching losses, the STT3808NE-VB is suitable for use in DC-DC converters, especially for applications that require high switching frequency and high efficiency. Whether in buck or boost power supplies, it can provide reliable current switching to ensure stable and efficient operation in small power modules. This makes the STT3808NE-VB an ideal choice for small power supply, regulator and converter designs.
3. **LED drive circuit**:
STT3808NE-VB is also suitable for LED drive circuits, especially when large currents need to be controlled. Its low on-resistance can significantly reduce heat generation during power conversion and improve the efficiency and stability of LED modules. In indoor lighting, automotive lighting and other energy-efficient lighting systems, this MOSFET can be used for efficient current switching and power control.
4. **Load switch and power management**:
In consumer electronics and smart devices, STT3808NE-VB can be widely used as a load switch. For example, in rechargeable batteries and power management modules, it can be used to switch power to protect batteries and devices from overload current. At the same time, due to its low on-resistance, it helps reduce power losses and improve the efficiency of the overall device.
5. **Automation control system**:
STT3808NE-VB is also suitable for power control modules in industrial automation, especially for power regulation of small automation equipment, sensors and small actuators. Its low power consumption and small package enable it to provide efficient current control in a small space, making it suitable for various industrial control systems that require miniaturization and high efficiency.
6. **Wireless communication equipment**:
In radio frequency (RF) modules and communication systems, STT3808NE-VB can be used for power switches and signal processing modules, especially in wireless communication devices that require precise power regulation. Its fast switching characteristics and low on-resistance make it suitable for equipment such as RF power amplifiers, battery management, and signal modems.
In summary, STT3808NE-VB MOSFET has excellent low power consumption and high efficiency, and is suitable for a variety of low-voltage, high-frequency power management and load control applications, especially in consumer electronics, LED drivers, battery management, automation control, and wireless communications.
1. **Low-power battery-powered devices**:
Due to the low threshold voltage and low on-resistance of the STT3808NE-VB, it is very suitable for low-power battery-powered devices. This MOSFET can achieve efficient switching at lower voltages, reduce battery loss, and is widely used in smart homes, wearable devices, portable battery-powered devices and other fields. In these devices, the STT3808NE-VB can be used as a switching element in the power management module to optimize battery efficiency and extend battery life.
2. **DC-DC converters**:
Due to its low on-resistance and low switching losses, the STT3808NE-VB is suitable for use in DC-DC converters, especially for applications that require high switching frequency and high efficiency. Whether in buck or boost power supplies, it can provide reliable current switching to ensure stable and efficient operation in small power modules. This makes the STT3808NE-VB an ideal choice for small power supply, regulator and converter designs.
3. **LED drive circuit**:
STT3808NE-VB is also suitable for LED drive circuits, especially when large currents need to be controlled. Its low on-resistance can significantly reduce heat generation during power conversion and improve the efficiency and stability of LED modules. In indoor lighting, automotive lighting and other energy-efficient lighting systems, this MOSFET can be used for efficient current switching and power control.
4. **Load switch and power management**:
In consumer electronics and smart devices, STT3808NE-VB can be widely used as a load switch. For example, in rechargeable batteries and power management modules, it can be used to switch power to protect batteries and devices from overload current. At the same time, due to its low on-resistance, it helps reduce power losses and improve the efficiency of the overall device.
5. **Automation control system**:
STT3808NE-VB is also suitable for power control modules in industrial automation, especially for power regulation of small automation equipment, sensors and small actuators. Its low power consumption and small package enable it to provide efficient current control in a small space, making it suitable for various industrial control systems that require miniaturization and high efficiency.
6. **Wireless communication equipment**:
In radio frequency (RF) modules and communication systems, STT3808NE-VB can be used for power switches and signal processing modules, especially in wireless communication devices that require precise power regulation. Its fast switching characteristics and low on-resistance make it suitable for equipment such as RF power amplifiers, battery management, and signal modems.
In summary, STT3808NE-VB MOSFET has excellent low power consumption and high efficiency, and is suitable for a variety of low-voltage, high-frequency power management and load control applications, especially in consumer electronics, LED drivers, battery management, automation control, and wireless communications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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