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STT3524C-VB Product details
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**Product Introduction: STT3524C-VB**
STT3524C-VB is a dual N+P MOSFET in SOT23-6 package, with high performance and low power consumption, suitable for a variety of power control and switching applications. The maximum drain-source voltage (VDS) of the device is ±20V, which can support bipolar voltage systems and is suitable for positive and negative power supply voltage environments. Its gate-source threshold voltage (Vth) is 1.0V (N-Channel) and -1.2V (P-Channel), respectively, which can start working at low gate voltage and is compatible with low-voltage logic control signals. When VGS=4.5V, the on-resistance (RDS(ON)) of N-Channel of STT3524C-VB is 30mΩ, and the RDS(ON) of P-Channel is 79mΩ; when VGS=10V, the RDS(ON) of N-Channel is 22mΩ, and the RDS(ON) of P-Channel is 55mΩ. Its maximum leakage current (ID) is 5.5A (N-Channel) and 3.4A (P-Channel), respectively, which is suitable for switching control of medium power loads. STT3524C-VB adopts Trench technology to optimize on-resistance and thermal management performance, suitable for high-efficiency power conversion and power management applications.
STT3524C-VB is a dual N+P MOSFET in SOT23-6 package, with high performance and low power consumption, suitable for a variety of power control and switching applications. The maximum drain-source voltage (VDS) of the device is ±20V, which can support bipolar voltage systems and is suitable for positive and negative power supply voltage environments. Its gate-source threshold voltage (Vth) is 1.0V (N-Channel) and -1.2V (P-Channel), respectively, which can start working at low gate voltage and is compatible with low-voltage logic control signals. When VGS=4.5V, the on-resistance (RDS(ON)) of N-Channel of STT3524C-VB is 30mΩ, and the RDS(ON) of P-Channel is 79mΩ; when VGS=10V, the RDS(ON) of N-Channel is 22mΩ, and the RDS(ON) of P-Channel is 55mΩ. Its maximum leakage current (ID) is 5.5A (N-Channel) and 3.4A (P-Channel), respectively, which is suitable for switching control of medium power loads. STT3524C-VB adopts Trench technology to optimize on-resistance and thermal management performance, suitable for high-efficiency power conversion and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | 22/55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P |
**Detailed parameter description: **
- **Model**: STT3524C-VB
- **Package type**: SOT23-6
- **Configuration**: Dual N+P type MOSFET
- **Maximum drain-source voltage (VDS)**: ±20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**:
- N-Channel: 1.0V
- P-Channel: -1.2V
- **On-resistance (RDS(ON))**:
- N-Channel @ VGS=4.5V: 30mΩ
- P-Channel @ VGS=4.5V: 79mΩ
- N-Channel @ VGS=10V: 22mΩ
- P-Channel @ VGS=10V: 55mΩ
- **Maximum leakage current (ID)**:
- N-Channel: 5.5A
- P-Channel: 3.4A
- **Technology type**: Trench (deep trench technology)
- **Operating temperature range**: -55°C to +150°C
- **Application type**: load switch, power management, power conversion, bipolar power control, etc.
- **Model**: STT3524C-VB
- **Package type**: SOT23-6
- **Configuration**: Dual N+P type MOSFET
- **Maximum drain-source voltage (VDS)**: ±20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**:
- N-Channel: 1.0V
- P-Channel: -1.2V
- **On-resistance (RDS(ON))**:
- N-Channel @ VGS=4.5V: 30mΩ
- P-Channel @ VGS=4.5V: 79mΩ
- N-Channel @ VGS=10V: 22mΩ
- P-Channel @ VGS=10V: 55mΩ
- **Maximum leakage current (ID)**:
- N-Channel: 5.5A
- P-Channel: 3.4A
- **Technology type**: Trench (deep trench technology)
- **Operating temperature range**: -55°C to +150°C
- **Application type**: load switch, power management, power conversion, bipolar power control, etc.
Domain and module applications：
**Application fields and module examples:**
1. **Low-power power management**:
STT3524C-VB can be widely used in low-power power management systems, especially in environments where positive and negative voltages are required (such as bipolar power systems). In these applications, the combination of N-Channel and P-Channel MOSFETs can efficiently control the flow of current, reduce conduction losses, and improve the overall efficiency of the system. This MOSFET is suitable for embedded systems, portable power supplies, and low-power battery management systems.
2. **Load switch control**:
In load switch applications, STT3524C-VB can be used for switch control of positive and negative power paths at the same time. Due to its N+P type dual-channel configuration, bidirectional control can be achieved in a small package. It can effectively switch loads and control the direction of current flow in mobile devices, home appliances, automotive electronics, and other fields. It is particularly suitable for applications such as switching power supplies, load management, and electronic switches.
3. **Power conversion in bipolar power systems**:
In bipolar power systems (such as ±12V or ±15V systems), the N-Channel and P-Channel configurations of the STT3524C-VB can be used as switching elements to ensure bidirectional current flow and improve power conversion efficiency. It is suitable for DC-DC converters, AC-DC adapters, automotive power systems and other fields, and can reduce energy losses in efficient power conversion.
4. **Synchronous rectification and power conversion applications**:
Due to its low on-resistance, the STT3524C-VB can be used in synchronous rectification (Synchronous Rectification) power systems. In DC-DC converters, the low on-resistance of N-Channel and P-Channel MOSFETs can significantly reduce energy losses and improve conversion efficiency. This makes it particularly suitable for power conversion applications such as high-efficiency battery chargers, LED drivers, and power adapters.
5. **Power Tools and Battery Management Systems (BMS)**:
In power tools and battery management systems (BMS), the STT3524C-VB can be used for high-efficiency power switches to ensure the safety and efficiency of battery charging and discharging. The dual-channel structure of N-Channel and P-Channel enables efficient management of positive and negative power supplies, and is suitable for various battery-powered devices, mobile power supplies, energy storage systems, etc.
1. **Low-power power management**:
STT3524C-VB can be widely used in low-power power management systems, especially in environments where positive and negative voltages are required (such as bipolar power systems). In these applications, the combination of N-Channel and P-Channel MOSFETs can efficiently control the flow of current, reduce conduction losses, and improve the overall efficiency of the system. This MOSFET is suitable for embedded systems, portable power supplies, and low-power battery management systems.
2. **Load switch control**:
In load switch applications, STT3524C-VB can be used for switch control of positive and negative power paths at the same time. Due to its N+P type dual-channel configuration, bidirectional control can be achieved in a small package. It can effectively switch loads and control the direction of current flow in mobile devices, home appliances, automotive electronics, and other fields. It is particularly suitable for applications such as switching power supplies, load management, and electronic switches.
3. **Power conversion in bipolar power systems**:
In bipolar power systems (such as ±12V or ±15V systems), the N-Channel and P-Channel configurations of the STT3524C-VB can be used as switching elements to ensure bidirectional current flow and improve power conversion efficiency. It is suitable for DC-DC converters, AC-DC adapters, automotive power systems and other fields, and can reduce energy losses in efficient power conversion.
4. **Synchronous rectification and power conversion applications**:
Due to its low on-resistance, the STT3524C-VB can be used in synchronous rectification (Synchronous Rectification) power systems. In DC-DC converters, the low on-resistance of N-Channel and P-Channel MOSFETs can significantly reduce energy losses and improve conversion efficiency. This makes it particularly suitable for power conversion applications such as high-efficiency battery chargers, LED drivers, and power adapters.
5. **Power Tools and Battery Management Systems (BMS)**:
In power tools and battery management systems (BMS), the STT3524C-VB can be used for high-efficiency power switches to ensure the safety and efficiency of battery charging and discharging. The dual-channel structure of N-Channel and P-Channel enables efficient management of positive and negative power supplies, and is suitable for various battery-powered devices, mobile power supplies, energy storage systems, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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