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STT3490N-VB Product details
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Product Introduction: STT3490N-VB
**Model**: STT3490N-VB
**Package Type**: SOT23-6
**Configuration**: Single-N-Channel
**Operating Voltage (VDS)**: 100V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 1.8V
**On-Resistance (RDS(ON))**:
- 95mΩ @ VGS = 10V
- 105mΩ @ VGS = 4.5V
**Maximum Drain Current (ID)**: 3.2A
**Technology Type**: Trench Technology
The STT3490N-VB is a high-efficiency single N-channel MOSFET in a SOT23-6 package with a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 3.2A. It provides very low on-resistance (RDS(ON)=95mΩ) at VGS = 10V, thus significantly reducing conduction losses for medium voltage and medium current load switching applications. This MOSFET uses Trench technology, which helps provide higher switching speeds and lower switching losses for efficient power management and load switching applications.
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**Model**: STT3490N-VB
**Package Type**: SOT23-6
**Configuration**: Single-N-Channel
**Operating Voltage (VDS)**: 100V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 1.8V
**On-Resistance (RDS(ON))**:
- 95mΩ @ VGS = 10V
- 105mΩ @ VGS = 4.5V
**Maximum Drain Current (ID)**: 3.2A
**Technology Type**: Trench Technology
The STT3490N-VB is a high-efficiency single N-channel MOSFET in a SOT23-6 package with a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 3.2A. It provides very low on-resistance (RDS(ON)=95mΩ) at VGS = 10V, thus significantly reducing conduction losses for medium voltage and medium current load switching applications. This MOSFET uses Trench technology, which helps provide higher switching speeds and lower switching losses for efficient power management and load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | 95mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
Detailed parameter description:
1. **VDS (drain-source voltage)**: 100V
- The maximum drain-source voltage of STT3490N-VB is 100V, which means it is suitable for applications with an operating voltage of up to 100V, and is suitable for medium voltage application scenarios such as battery-driven equipment and DC power supplies.
2. **VGS (gate-source voltage)**: ±20V
- The maximum value of the gate-source voltage is ±20V, which can adapt to a variety of gate drive voltages, especially suitable for applications compatible with logic level drivers, providing flexible control schemes.
3. **Vth (threshold voltage)**: 1.8V
- The threshold voltage of this MOSFET is 1.8V, which means that when the gate-source voltage exceeds 1.8V, the MOSFET will start to turn on. The relatively low threshold voltage helps to improve switching speed and switching efficiency, which is especially useful under low voltage operating conditions.
4. **RDS(ON) (On-resistance)**:
- **95mΩ @ VGS = 10V**
- **105mΩ @ VGS = 4.5V**
- The on-resistance of STT3490N-VB is very low, 95mΩ at VGS = 10V, indicating that this MOSFET has low conduction losses when operating, thereby improving the energy efficiency of the overall system. This makes this MOSFET very suitable for power supply and load control applications that require high efficiency.
5. **ID (Drain Current)**: 3.2A
- The maximum drain current is 3.2A, which is suitable for medium current applications such as power switching, load control, etc., and can stably operate under a current load of about 3A.
6. **Technology**: Trench technology
- The use of Trench technology enables this MOSFET to have a lower on-resistance and a higher switching speed. The advantage of this technology is that it can reduce switching losses, improve system efficiency, and has strong thermal management performance. It is suitable for high-frequency and high-efficiency switching power supply systems.
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1. **VDS (drain-source voltage)**: 100V
- The maximum drain-source voltage of STT3490N-VB is 100V, which means it is suitable for applications with an operating voltage of up to 100V, and is suitable for medium voltage application scenarios such as battery-driven equipment and DC power supplies.
2. **VGS (gate-source voltage)**: ±20V
- The maximum value of the gate-source voltage is ±20V, which can adapt to a variety of gate drive voltages, especially suitable for applications compatible with logic level drivers, providing flexible control schemes.
3. **Vth (threshold voltage)**: 1.8V
- The threshold voltage of this MOSFET is 1.8V, which means that when the gate-source voltage exceeds 1.8V, the MOSFET will start to turn on. The relatively low threshold voltage helps to improve switching speed and switching efficiency, which is especially useful under low voltage operating conditions.
4. **RDS(ON) (On-resistance)**:
- **95mΩ @ VGS = 10V**
- **105mΩ @ VGS = 4.5V**
- The on-resistance of STT3490N-VB is very low, 95mΩ at VGS = 10V, indicating that this MOSFET has low conduction losses when operating, thereby improving the energy efficiency of the overall system. This makes this MOSFET very suitable for power supply and load control applications that require high efficiency.
5. **ID (Drain Current)**: 3.2A
- The maximum drain current is 3.2A, which is suitable for medium current applications such as power switching, load control, etc., and can stably operate under a current load of about 3A.
6. **Technology**: Trench technology
- The use of Trench technology enables this MOSFET to have a lower on-resistance and a higher switching speed. The advantage of this technology is that it can reduce switching losses, improve system efficiency, and has strong thermal management performance. It is suitable for high-frequency and high-efficiency switching power supply systems.
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Domain and module applications：
Applicable fields and module examples:
1. **Switching Power Supply (SMPS)**:
STT3490N-VB is widely used in switching power supplies (SMPS) as a switching element in power management modules. Its low on-resistance and high switching efficiency can significantly reduce power losses, thereby improving the efficiency of the entire power system. It is suitable for medium-power power conversion, such as low-power DC-DC converters, linear regulation power supplies, etc.
2. **DC-DC Converter**:
In a DC-DC converter, the STT3490N-VB can be used as a switching element to help convert the input voltage to the required output voltage. Through low on-resistance and high switching speed, the STT3490N-VB provides lower power loss during voltage conversion and can support a current load of 3.2A, which is suitable for efficient battery chargers and battery management systems.
3. **Load switch control**:
STT3490N-VB can be used in load switch control, especially in electronic systems that require low power consumption and high efficiency. Its high-efficiency switching characteristics make it very suitable for battery-powered systems in electronic products, power control of low-power devices, and smart meters.
4. **Battery Management System (BMS)**:
In the battery management system, STT3490N-VB can be used for battery charge and discharge control. The low on-resistance of MOSFET helps reduce energy loss and provides fast switching response, which is suitable for applications such as electric vehicles and battery energy storage systems, improving the energy efficiency and life of the battery system.
5. **LED driver power supply**:
STT3490N-VB is suitable for LED driver power supply applications, especially in high-efficiency LED lighting systems. Low on-resistance and high switching frequency make this MOSFET very suitable for LED driver applications that require precise current control and high efficiency, thereby reducing heat generation and improving the working efficiency of LEDs.
6. **Automotive Electronic Systems**:
In automotive electronic systems, the STT3490N-VB can be used as a switching element in power management, on-board chargers, and battery protection modules. Its high switching efficiency and low power consumption make it an ideal choice for power management systems in modern electric and hybrid vehicles, providing efficient energy conversion and battery management solutions.
7. **Smart Meters and IoT Devices**:
In smart meters and Internet of Things (IoT) devices, the STT3490N-VB can provide precise current control and voltage conversion, helping these devices to achieve low power consumption and high efficiency operation. The efficient switching characteristics of MOSFET are very suitable for wireless sensor networks and smart devices that require long-term stable operation and low energy consumption.
Through these applications, the STT3490N-VB provides efficient current control and energy conversion solutions in multiple fields, suitable for medium voltage and medium current applications requiring high efficiency and low loss.
1. **Switching Power Supply (SMPS)**:
STT3490N-VB is widely used in switching power supplies (SMPS) as a switching element in power management modules. Its low on-resistance and high switching efficiency can significantly reduce power losses, thereby improving the efficiency of the entire power system. It is suitable for medium-power power conversion, such as low-power DC-DC converters, linear regulation power supplies, etc.
2. **DC-DC Converter**:
In a DC-DC converter, the STT3490N-VB can be used as a switching element to help convert the input voltage to the required output voltage. Through low on-resistance and high switching speed, the STT3490N-VB provides lower power loss during voltage conversion and can support a current load of 3.2A, which is suitable for efficient battery chargers and battery management systems.
3. **Load switch control**:
STT3490N-VB can be used in load switch control, especially in electronic systems that require low power consumption and high efficiency. Its high-efficiency switching characteristics make it very suitable for battery-powered systems in electronic products, power control of low-power devices, and smart meters.
4. **Battery Management System (BMS)**:
In the battery management system, STT3490N-VB can be used for battery charge and discharge control. The low on-resistance of MOSFET helps reduce energy loss and provides fast switching response, which is suitable for applications such as electric vehicles and battery energy storage systems, improving the energy efficiency and life of the battery system.
5. **LED driver power supply**:
STT3490N-VB is suitable for LED driver power supply applications, especially in high-efficiency LED lighting systems. Low on-resistance and high switching frequency make this MOSFET very suitable for LED driver applications that require precise current control and high efficiency, thereby reducing heat generation and improving the working efficiency of LEDs.
6. **Automotive Electronic Systems**:
In automotive electronic systems, the STT3490N-VB can be used as a switching element in power management, on-board chargers, and battery protection modules. Its high switching efficiency and low power consumption make it an ideal choice for power management systems in modern electric and hybrid vehicles, providing efficient energy conversion and battery management solutions.
7. **Smart Meters and IoT Devices**:
In smart meters and Internet of Things (IoT) devices, the STT3490N-VB can provide precise current control and voltage conversion, helping these devices to achieve low power consumption and high efficiency operation. The efficient switching characteristics of MOSFET are very suitable for wireless sensor networks and smart devices that require long-term stable operation and low energy consumption.
Through these applications, the STT3490N-VB provides efficient current control and energy conversion solutions in multiple fields, suitable for medium voltage and medium current applications requiring high efficiency and low loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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