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STT3470N-VB Product details
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Product Introduction
**STT3470N-VB** is a high-efficiency single N-type MOSFET in a **SOT23-6** package, designed for switching applications in the low to medium voltage range. The maximum **VDS** of this MOSFET is **100V**, which is suitable for medium voltage power management and switching circuits. Its **Vth** (threshold voltage) is **1.8V**, which means it can switch at a lower gate drive voltage. **RDS(ON)** is **95mΩ** at **VGS=10V** and **105mΩ** at **VGS=4.5V**. It has a low on-resistance and can effectively reduce power loss in the on state, thereby improving overall system efficiency. The **ID** (maximum drain current) of this MOSFET is **3.2A**, which is suitable for load control applications with smaller currents. The **Trench technology** is used to increase the switching speed, making it suitable for efficient current switching and power management.
**STT3470N-VB** is a high-efficiency single N-type MOSFET in a **SOT23-6** package, designed for switching applications in the low to medium voltage range. The maximum **VDS** of this MOSFET is **100V**, which is suitable for medium voltage power management and switching circuits. Its **Vth** (threshold voltage) is **1.8V**, which means it can switch at a lower gate drive voltage. **RDS(ON)** is **95mΩ** at **VGS=10V** and **105mΩ** at **VGS=4.5V**. It has a low on-resistance and can effectively reduce power loss in the on state, thereby improving overall system efficiency. The **ID** (maximum drain current) of this MOSFET is **3.2A**, which is suitable for load control applications with smaller currents. The **Trench technology** is used to increase the switching speed, making it suitable for efficient current switching and power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | 95mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
Detailed parameter description
| **Parameter** | **Description** |
|-----------------|---------------------------------------|
| **Model** | STT3470N-VB |
| **Package** | SOT23-6 |
| **Configuration** | Single N-type MOSFET (Single-N-Channel) |
| **VDS** | 100V (Maximum drain-source voltage) |
| **VGS** | ±20V (Gate-source voltage) |
| **Vth** | 1.8V (Threshold voltage) |
| **RDS(ON)** | 105mΩ @ VGS = 4.5V |
| **RDS(ON)** | 95mΩ @ VGS = 10V |
| **ID** | 3.2A (Maximum drain current) |
| **Technology** | Trench Technology|
| **Parameter** | **Description** |
|-----------------|---------------------------------------|
| **Model** | STT3470N-VB |
| **Package** | SOT23-6 |
| **Configuration** | Single N-type MOSFET (Single-N-Channel) |
| **VDS** | 100V (Maximum drain-source voltage) |
| **VGS** | ±20V (Gate-source voltage) |
| **Vth** | 1.8V (Threshold voltage) |
| **RDS(ON)** | 105mΩ @ VGS = 4.5V |
| **RDS(ON)** | 95mΩ @ VGS = 10V |
| **ID** | 3.2A (Maximum drain current) |
| **Technology** | Trench Technology|
Domain and module applications：
Product application areas and module examples
1. **Low-power power management**:
**STT3470N-VB** is an ideal switching element in **low-power power management systems**. In **DC-DC converters** and **battery management systems**, due to its low **RDS(ON)** characteristics, it can reduce energy loss in power conversion and improve overall conversion efficiency. For example, in **portable devices**, **STT3470N-VB** can be used to provide stable voltage and current while keeping the system running at low power.
2. **Load switch**:
This MOSFET is particularly suitable for **load switch** applications due to its low **RDS(ON)** and moderate **ID**. It can be used for **LED drivers**, **battery protection circuits** or **home appliances** switching control. Its small package size (**SOT23-6**) makes it particularly suitable for space-limited applications, enabling efficient control of current switching and reducing power losses.
3. **Battery Management System (BMS)**:
**STT3470N-VB** can be widely used in **Battery Management System** (BMS), especially in **small lithium battery** protection circuits. It can effectively control the current flow during battery charging and discharging, and ensure the stability and safety of the battery system. Due to its low **RDS(ON)**, it can significantly reduce power loss and extend battery life when handling small currents.
4. **Automotive Electronics**:
**STT3470N-VB** is also suitable for some **automotive electronic applications**, such as **electric seat control**, **headlight control** and **electric window control**. Its **VDS** is **100V**, and it works in a moderate voltage environment, and can stably provide current control to meet the needs of efficient switching in automotive electronic systems.
5. **Wireless Charging System**:
In **Wireless Charging System**, **STT3470N-VB** can be used as an efficient switching element. It can provide efficient current control and energy conversion, reducing energy loss during charging. Due to its low **RDS(ON)** and small package size, it is particularly suitable for use in devices such as **wireless charging base** and **wireless charging receiver**.
6. **Smart Home Appliances**:
This MOSFET is also widely used in **smart home appliances**, especially in control systems such as **smart lights**, **smart air conditioners**, **washing machines**. **STT3470N-VB** can be used as a current switching element to provide efficient current control, reduce power loss and improve the operating efficiency of home appliance systems. Its small package makes it suitable for compact home appliance designs.
7. **Consumer Electronics**:
Due to its efficient switching performance, **STT3470N-VB** has a wide range of applications in **consumer electronics**. For example, **STT3470N-VB** can be used as a key component for power management and load switching in **smartphones**, **tablets**, and **portable speakers**. Its low power consumption helps extend battery life and improve user experience.
1. **Low-power power management**:
**STT3470N-VB** is an ideal switching element in **low-power power management systems**. In **DC-DC converters** and **battery management systems**, due to its low **RDS(ON)** characteristics, it can reduce energy loss in power conversion and improve overall conversion efficiency. For example, in **portable devices**, **STT3470N-VB** can be used to provide stable voltage and current while keeping the system running at low power.
2. **Load switch**:
This MOSFET is particularly suitable for **load switch** applications due to its low **RDS(ON)** and moderate **ID**. It can be used for **LED drivers**, **battery protection circuits** or **home appliances** switching control. Its small package size (**SOT23-6**) makes it particularly suitable for space-limited applications, enabling efficient control of current switching and reducing power losses.
3. **Battery Management System (BMS)**:
**STT3470N-VB** can be widely used in **Battery Management System** (BMS), especially in **small lithium battery** protection circuits. It can effectively control the current flow during battery charging and discharging, and ensure the stability and safety of the battery system. Due to its low **RDS(ON)**, it can significantly reduce power loss and extend battery life when handling small currents.
4. **Automotive Electronics**:
**STT3470N-VB** is also suitable for some **automotive electronic applications**, such as **electric seat control**, **headlight control** and **electric window control**. Its **VDS** is **100V**, and it works in a moderate voltage environment, and can stably provide current control to meet the needs of efficient switching in automotive electronic systems.
5. **Wireless Charging System**:
In **Wireless Charging System**, **STT3470N-VB** can be used as an efficient switching element. It can provide efficient current control and energy conversion, reducing energy loss during charging. Due to its low **RDS(ON)** and small package size, it is particularly suitable for use in devices such as **wireless charging base** and **wireless charging receiver**.
6. **Smart Home Appliances**:
This MOSFET is also widely used in **smart home appliances**, especially in control systems such as **smart lights**, **smart air conditioners**, **washing machines**. **STT3470N-VB** can be used as a current switching element to provide efficient current control, reduce power loss and improve the operating efficiency of home appliance systems. Its small package makes it suitable for compact home appliance designs.
7. **Consumer Electronics**:
Due to its efficient switching performance, **STT3470N-VB** has a wide range of applications in **consumer electronics**. For example, **STT3470N-VB** can be used as a key component for power management and load switching in **smartphones**, **tablets**, and **portable speakers**. Its low power consumption helps extend battery life and improve user experience.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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