中文
English
STT3458N-VB Product details
Back to previous pageProduct introduction：
1. **STT3458N-VB Product Introduction**
**STT3458N-VB** is a **single N-type MOSFET** in **SOT23-6 package**, with **60V drain-source voltage (VDS)** and **7A maximum drain current (ID)**. The device uses **Trench technology** to optimize on-resistance and switching characteristics, providing lower power loss. Its **gate-source voltage (VGS)** supports **±20V**, adapting to a wide range of driving voltages, while its **threshold voltage (Vth)** is **1.7V**, suitable for a variety of low-voltage driving applications. Its low **on-resistance (RDS(ON))** can reach **35mΩ (VGS=4.5V)** and **30mΩ (VGS=10V)**, providing good performance for high-efficiency power conversion, and is widely used in consumer electronics, computer power supplies, power switches and battery management.
**STT3458N-VB** is a **single N-type MOSFET** in **SOT23-6 package**, with **60V drain-source voltage (VDS)** and **7A maximum drain current (ID)**. The device uses **Trench technology** to optimize on-resistance and switching characteristics, providing lower power loss. Its **gate-source voltage (VGS)** supports **±20V**, adapting to a wide range of driving voltages, while its **threshold voltage (Vth)** is **1.7V**, suitable for a variety of low-voltage driving applications. Its low **on-resistance (RDS(ON))** can reach **35mΩ (VGS=4.5V)** and **30mΩ (VGS=10V)**, providing good performance for high-efficiency power conversion, and is widely used in consumer electronics, computer power supplies, power switches and battery management.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 60V | 1.7V | 7A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
2. **Detailed parameter description**
- **Model**: STT3458N-VB
- **Package type**: **SOT23-6** — Suitable for compact circuit board design, saving space.
- **Configuration**: **Single-N-Channel** — Single N-type MOSFET, suitable for switch control and high-efficiency power management.
- **Drain-source voltage (VDS)**: **60V** — Suitable for medium voltage applications, can withstand a maximum drain-source voltage of 60V.
- **Gate-source voltage (VGS)**: **±20V** — Supports a maximum gate-source voltage of ±20V, adapting to different drive voltages.
- **Threshold voltage (Vth)**: **1.7V** — MOSFET starts to turn on when the gate-source voltage reaches 1.7V, suitable for low-voltage drive circuits.
- **On-resistance (RDS(ON))**:
- **35mΩ @ VGS=4.5V** — Lower on-resistance at low gate voltage, suitable for medium current applications.
- **30mΩ @ VGS=10V** — Lower on-resistance at higher gate voltage, reducing energy loss.
- **Maximum drain current (ID)**: **7A** — Suitable for low to medium current loads, capable of providing stable current control.
- **Technology type**: **Trench technology** — Optimizes switching performance and on-resistance, reduces switching losses, suitable for high-efficiency applications.
- **Model**: STT3458N-VB
- **Package type**: **SOT23-6** — Suitable for compact circuit board design, saving space.
- **Configuration**: **Single-N-Channel** — Single N-type MOSFET, suitable for switch control and high-efficiency power management.
- **Drain-source voltage (VDS)**: **60V** — Suitable for medium voltage applications, can withstand a maximum drain-source voltage of 60V.
- **Gate-source voltage (VGS)**: **±20V** — Supports a maximum gate-source voltage of ±20V, adapting to different drive voltages.
- **Threshold voltage (Vth)**: **1.7V** — MOSFET starts to turn on when the gate-source voltage reaches 1.7V, suitable for low-voltage drive circuits.
- **On-resistance (RDS(ON))**:
- **35mΩ @ VGS=4.5V** — Lower on-resistance at low gate voltage, suitable for medium current applications.
- **30mΩ @ VGS=10V** — Lower on-resistance at higher gate voltage, reducing energy loss.
- **Maximum drain current (ID)**: **7A** — Suitable for low to medium current loads, capable of providing stable current control.
- **Technology type**: **Trench technology** — Optimizes switching performance and on-resistance, reduces switching losses, suitable for high-efficiency applications.
Domain and module applications：
**Applicable fields and modules**
**The characteristics of STT3458N-VB** make it suitable for many fields, especially in situations where low power loss, high efficiency and medium current control are required. The following are some typical applications:
#### a) **Power management and DC-DC converters**
This MOSFET is very suitable for power switches in **switching power supplies** (such as **DC-DC converters**), especially **medium voltage** (such as 12V, 24V, 48V, etc.) applications. Its low on-resistance helps reduce power loss and provides stable current control while improving conversion efficiency. It is suitable for **battery-powered equipment**, **power tools**, **industrial control systems**, etc.
#### b) **Low voltage drive and battery management**
In **battery management systems (BMS)**, **STT3458N-VB** can be used as a battery charge and discharge controller, especially for **lithium battery management**. Its **threshold voltage of 1.7V** and **low on-resistance** features enable efficient control at **low voltage**, ensuring battery charging and discharging efficiency.
#### c) **Power Tools and Portable Devices**
**STT3458N-VB**'s **7A maximum drain current** and low on-resistance make it an ideal choice for **power tools** and **portable battery-driven devices**. In these applications, MOSFETs need to carry high currents in limited space and the working environment may have large voltage fluctuations. The MOSFET can provide stable switching characteristics and high efficiency.
#### d) **Consumer Electronics**
In consumer electronics, **STT3458N-VB** can be applied to **LED driver circuits**, **battery chargers** and **power management systems for portable electronic devices**. It can provide stable power regulation and improve the overall efficiency of the system, especially in smaller board designs, where the compact size of the SOT23-6 package can save valuable space.
#### e) **Automotive electronics and electric vehicles (EV)**
**STT3458N-VB** is also widely used in **automotive electronics** (such as **on-board battery management systems**). It can be used as a switching device in battery management or power control modules in electric vehicles to ensure the stability of battery charging and discharging and provide efficient energy conversion.
#### f) **Power factor correction (PFC) circuit**
In the **power factor correction** circuit, **STT3458N-VB** is suitable for use in power conversion situations that require high voltage. Due to its low on-resistance and high efficiency, it can effectively improve the power factor of the system and reduce invalid energy loss. It is widely used in industrial power supplies, server power supplies, and home appliance power systems.
#### g) **Computer power supplies and communication equipment**
**STT3458N-VB** is also suitable for power management systems in **computer power supplies** and **communication equipment**. In these systems, MOSFETs need to switch quickly and have high efficiency to meet high frequency and high load requirements. This MOSFET can provide reliable switching performance, effectively reduce power loss and improve system stability.
### Summary
**STT3458N-VB** is a low on-resistance, **Trench technology** MOSFET suitable for **medium voltage (60V)** and **medium current (7A)** applications. Its low power consumption and high efficiency make it widely used in **power management, DC-DC converters, LED drivers, battery management systems, power tools, portable devices, automotive electronics, computer power supplies** and other fields. In these fields, it can provide efficient energy conversion and reliable current control, and is an indispensable key component in various high-efficiency power electronic systems.
**The characteristics of STT3458N-VB** make it suitable for many fields, especially in situations where low power loss, high efficiency and medium current control are required. The following are some typical applications:
#### a) **Power management and DC-DC converters**
This MOSFET is very suitable for power switches in **switching power supplies** (such as **DC-DC converters**), especially **medium voltage** (such as 12V, 24V, 48V, etc.) applications. Its low on-resistance helps reduce power loss and provides stable current control while improving conversion efficiency. It is suitable for **battery-powered equipment**, **power tools**, **industrial control systems**, etc.
#### b) **Low voltage drive and battery management**
In **battery management systems (BMS)**, **STT3458N-VB** can be used as a battery charge and discharge controller, especially for **lithium battery management**. Its **threshold voltage of 1.7V** and **low on-resistance** features enable efficient control at **low voltage**, ensuring battery charging and discharging efficiency.
#### c) **Power Tools and Portable Devices**
**STT3458N-VB**'s **7A maximum drain current** and low on-resistance make it an ideal choice for **power tools** and **portable battery-driven devices**. In these applications, MOSFETs need to carry high currents in limited space and the working environment may have large voltage fluctuations. The MOSFET can provide stable switching characteristics and high efficiency.
#### d) **Consumer Electronics**
In consumer electronics, **STT3458N-VB** can be applied to **LED driver circuits**, **battery chargers** and **power management systems for portable electronic devices**. It can provide stable power regulation and improve the overall efficiency of the system, especially in smaller board designs, where the compact size of the SOT23-6 package can save valuable space.
#### e) **Automotive electronics and electric vehicles (EV)**
**STT3458N-VB** is also widely used in **automotive electronics** (such as **on-board battery management systems**). It can be used as a switching device in battery management or power control modules in electric vehicles to ensure the stability of battery charging and discharging and provide efficient energy conversion.
#### f) **Power factor correction (PFC) circuit**
In the **power factor correction** circuit, **STT3458N-VB** is suitable for use in power conversion situations that require high voltage. Due to its low on-resistance and high efficiency, it can effectively improve the power factor of the system and reduce invalid energy loss. It is widely used in industrial power supplies, server power supplies, and home appliance power systems.
#### g) **Computer power supplies and communication equipment**
**STT3458N-VB** is also suitable for power management systems in **computer power supplies** and **communication equipment**. In these systems, MOSFETs need to switch quickly and have high efficiency to meet high frequency and high load requirements. This MOSFET can provide reliable switching performance, effectively reduce power loss and improve system stability.
### Summary
**STT3458N-VB** is a low on-resistance, **Trench technology** MOSFET suitable for **medium voltage (60V)** and **medium current (7A)** applications. Its low power consumption and high efficiency make it widely used in **power management, DC-DC converters, LED drivers, battery management systems, power tools, portable devices, automotive electronics, computer power supplies** and other fields. In these fields, it can provide efficient energy conversion and reliable current control, and is an indispensable key component in various high-efficiency power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
