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STT3423P-VB Product details
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Product Introduction:
**STT3423P-VB** is a single P-channel MOSFET in a SOT23-6 package, designed for low-voltage, high-efficiency power control applications. Using Trench technology, it has a lower on-resistance (Rds(on)) and supports a larger leakage current capability (maximum 4.8A), which is suitable for medium and low voltage power management systems. The maximum drain-source voltage (Vds) of this MOSFET is -30V, and the gate-source voltage (Vgs) is ±20V, which is suitable for battery-powered and low-power power conversion applications. The STT3423P-VB is particularly suitable for efficient current control in circuits such as power management, power switching, and low-voltage battery management, significantly reducing power consumption and improving overall system efficiency.
**STT3423P-VB** is a single P-channel MOSFET in a SOT23-6 package, designed for low-voltage, high-efficiency power control applications. Using Trench technology, it has a lower on-resistance (Rds(on)) and supports a larger leakage current capability (maximum 4.8A), which is suitable for medium and low voltage power management systems. The maximum drain-source voltage (Vds) of this MOSFET is -30V, and the gate-source voltage (Vgs) is ±20V, which is suitable for battery-powered and low-power power conversion applications. The STT3423P-VB is particularly suitable for efficient current control in circuits such as power management, power switching, and low-voltage battery management, significantly reducing power consumption and improving overall system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description:
- **Package**: SOT23-6
- **Configuration**: Single-P-Channel
- **Drain-source voltage (Vds)**: -30V
- **Gate-source voltage (Vgs)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (Rds(on))**:
- 54mΩ @ Vgs = 4.5V
- 49mΩ @ Vgs = 10V
- **Maximum drain current (Id)**: -4.8A
- **Technology**: Trench
- **Maximum power dissipation (Pd)**: Maximum 2W (the specific value needs to be calculated according to the working conditions)
- **Input capacitance (Ciss)**: 450pF @ Vds = 10V
- **Output capacitance (Coss)**: 80pF @ Vds = 10V
- **Reverse recovery time (Trr)**: 20ns
- **Operating temperature range**: -55°C to +150°C
- **Package**: SOT23-6
- **Configuration**: Single-P-Channel
- **Drain-source voltage (Vds)**: -30V
- **Gate-source voltage (Vgs)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (Rds(on))**:
- 54mΩ @ Vgs = 4.5V
- 49mΩ @ Vgs = 10V
- **Maximum drain current (Id)**: -4.8A
- **Technology**: Trench
- **Maximum power dissipation (Pd)**: Maximum 2W (the specific value needs to be calculated according to the working conditions)
- **Input capacitance (Ciss)**: 450pF @ Vds = 10V
- **Output capacitance (Coss)**: 80pF @ Vds = 10V
- **Reverse recovery time (Trr)**: 20ns
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
Applicable fields and module application examples:
1. **Battery Management System (BMS)**
The low on-resistance and high current handling capability of STT3423P-VB give it an advantage in battery management systems. This MOSFET can be used for charge and discharge control, providing high-efficiency and low-power solutions in battery charge and discharge management of power tools, electric vehicles and mobile devices.
2. **DC-DC Converter**
In DC-DC converters, STT3423P-VB can be used as a power switch element. Low Rds(on) reduces power loss and improves conversion efficiency in Buck converters and other power management circuits, and is particularly suitable for portable devices, power adapters and low-power electronic products.
3. **Load Switch**
This MOSFET performs well in load switch applications, can efficiently control current and reduce losses. Especially in low-power devices and battery-driven systems, STT3423P-VB can be used to implement efficient power switches and extend battery life.
4. **Intelligent Power System**
Due to its low on-resistance and efficient switching characteristics, the STT3423P-VB is widely used in intelligent power systems such as smart homes, wireless sensors and IoT devices. These applications require efficient and reliable power control, and the STT3423P-VB provides an ideal solution.
5. **LED Drive Circuit**
In the LED drive circuit, the STT3423P-VB can be used for current regulation and control to ensure the stable operation of the LED light source. Due to the low on-resistance, it can effectively reduce heat generation and extend the life of the power system. It is widely used in fields such as intelligent lighting and backlight modules.
6. **Automotive Power Management**
The high current capability of this MOSFET makes it very suitable for automotive power management systems. It can be used for battery voltage conversion, power switching and efficient power management, especially in electric vehicles, hybrid vehicles and on-board power modules.
7. **Communication equipment**
In communication equipment, the low power consumption and high efficiency of STT3423P-VB make it suitable for power management applications in various communication systems, such as base stations, network equipment, and wireless charging equipment. Low on-resistance can help reduce the power consumption of equipment and improve the working efficiency of communication systems.
Through these applications, STT3423P-VB shows its wide applicability in multiple fields, especially suitable for battery management, low-voltage power conversion, high-efficiency power management and intelligent systems.
1. **Battery Management System (BMS)**
The low on-resistance and high current handling capability of STT3423P-VB give it an advantage in battery management systems. This MOSFET can be used for charge and discharge control, providing high-efficiency and low-power solutions in battery charge and discharge management of power tools, electric vehicles and mobile devices.
2. **DC-DC Converter**
In DC-DC converters, STT3423P-VB can be used as a power switch element. Low Rds(on) reduces power loss and improves conversion efficiency in Buck converters and other power management circuits, and is particularly suitable for portable devices, power adapters and low-power electronic products.
3. **Load Switch**
This MOSFET performs well in load switch applications, can efficiently control current and reduce losses. Especially in low-power devices and battery-driven systems, STT3423P-VB can be used to implement efficient power switches and extend battery life.
4. **Intelligent Power System**
Due to its low on-resistance and efficient switching characteristics, the STT3423P-VB is widely used in intelligent power systems such as smart homes, wireless sensors and IoT devices. These applications require efficient and reliable power control, and the STT3423P-VB provides an ideal solution.
5. **LED Drive Circuit**
In the LED drive circuit, the STT3423P-VB can be used for current regulation and control to ensure the stable operation of the LED light source. Due to the low on-resistance, it can effectively reduce heat generation and extend the life of the power system. It is widely used in fields such as intelligent lighting and backlight modules.
6. **Automotive Power Management**
The high current capability of this MOSFET makes it very suitable for automotive power management systems. It can be used for battery voltage conversion, power switching and efficient power management, especially in electric vehicles, hybrid vehicles and on-board power modules.
7. **Communication equipment**
In communication equipment, the low power consumption and high efficiency of STT3423P-VB make it suitable for power management applications in various communication systems, such as base stations, network equipment, and wireless charging equipment. Low on-resistance can help reduce the power consumption of equipment and improve the working efficiency of communication systems.
Through these applications, STT3423P-VB shows its wide applicability in multiple fields, especially suitable for battery management, low-voltage power conversion, high-efficiency power management and intelligent systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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