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STT10L01-VB Product details
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Product Introduction: STT10L01-VB
**Model**: STT10L01-VB
**Package Type**: SOT223
**Configuration**: Single-N-Channel
**Operating Voltage (VDS)**: 100V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 1.8V
**On-Resistance (RDS(ON))**:
- 100mΩ @ VGS = 10V
- 120mΩ @ VGS = 4.5V
**Maximum Drain Current (ID)**: 5A
**Technology Type**: Trench Technology
The STT10L01-VB is a single N-channel MOSFET in a SOT223 package for medium voltage and medium current load switching applications. It has a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 5A, and has a low on-resistance (RDS(ON)=100mΩ) at a gate voltage of 10V. The STT10L01-VB uses Trench technology to provide higher switching efficiency and lower conduction losses, making it ideal for power management, switching power supplies (SMPS), and other switching applications that require high efficiency.
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**Model**: STT10L01-VB
**Package Type**: SOT223
**Configuration**: Single-N-Channel
**Operating Voltage (VDS)**: 100V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 1.8V
**On-Resistance (RDS(ON))**:
- 100mΩ @ VGS = 10V
- 120mΩ @ VGS = 4.5V
**Maximum Drain Current (ID)**: 5A
**Technology Type**: Trench Technology
The STT10L01-VB is a single N-channel MOSFET in a SOT223 package for medium voltage and medium current load switching applications. It has a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 5A, and has a low on-resistance (RDS(ON)=100mΩ) at a gate voltage of 10V. The STT10L01-VB uses Trench technology to provide higher switching efficiency and lower conduction losses, making it ideal for power management, switching power supplies (SMPS), and other switching applications that require high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description:
1. **VDS (drain-source voltage)**: 100V
- The maximum drain-source voltage supported by STT10L01-VB is 100V, which is suitable for medium-voltage switching power supplies and power management applications. It is suitable for use in power supply systems with voltages not exceeding 100V to ensure stable operating performance.
2. **VGS (gate-source voltage)**: ±20V
- The maximum value of the gate-source voltage is ±20V, which can support most MOSFET drive circuits, especially logic-level-based control systems, with high flexibility.
3. **Vth (threshold voltage)**: 1.8V
- The threshold voltage of this MOSFET is 1.8V, which means that when the gate-source voltage exceeds 1.8V, the MOSFET will start to turn on. This lower threshold voltage helps ensure that the MOSFET turns on quickly, reducing switching losses and improving system efficiency.
4. **RDS(ON) (On-resistance)**:
- **100mΩ @ VGS = 10V**
- **120mΩ @ VGS = 4.5V**
- The on-resistance (RDS(ON)) of STT10L01-VB is 100mΩ at 10V gate voltage and 120mΩ at 4.5V gate voltage. The lower on-resistance ensures lower power loss and is suitable for high-efficiency power conversion applications.
5. **ID (Drain Current)**: 5A
- STT10L01-VB can withstand a maximum drain current of 5A, suitable for applications with medium current requirements, capable of efficiently transferring current and providing stable operating performance.
6. **Technology**: Trench technology
- This MOSFET adopts Trench technology, which has the advantages of low on-resistance and high switching efficiency. It is suitable for high-frequency, low-power switching applications, reducing switching losses and improving system efficiency.
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1. **VDS (drain-source voltage)**: 100V
- The maximum drain-source voltage supported by STT10L01-VB is 100V, which is suitable for medium-voltage switching power supplies and power management applications. It is suitable for use in power supply systems with voltages not exceeding 100V to ensure stable operating performance.
2. **VGS (gate-source voltage)**: ±20V
- The maximum value of the gate-source voltage is ±20V, which can support most MOSFET drive circuits, especially logic-level-based control systems, with high flexibility.
3. **Vth (threshold voltage)**: 1.8V
- The threshold voltage of this MOSFET is 1.8V, which means that when the gate-source voltage exceeds 1.8V, the MOSFET will start to turn on. This lower threshold voltage helps ensure that the MOSFET turns on quickly, reducing switching losses and improving system efficiency.
4. **RDS(ON) (On-resistance)**:
- **100mΩ @ VGS = 10V**
- **120mΩ @ VGS = 4.5V**
- The on-resistance (RDS(ON)) of STT10L01-VB is 100mΩ at 10V gate voltage and 120mΩ at 4.5V gate voltage. The lower on-resistance ensures lower power loss and is suitable for high-efficiency power conversion applications.
5. **ID (Drain Current)**: 5A
- STT10L01-VB can withstand a maximum drain current of 5A, suitable for applications with medium current requirements, capable of efficiently transferring current and providing stable operating performance.
6. **Technology**: Trench technology
- This MOSFET adopts Trench technology, which has the advantages of low on-resistance and high switching efficiency. It is suitable for high-frequency, low-power switching applications, reducing switching losses and improving system efficiency.
---
Domain and module applications：
Applicable fields and module examples:
1. **Switching Power Supply (SMPS)**:
STT10L01-VB can be widely used in switching power supply (SMPS) modules. Due to its low on-resistance and high switching speed, this MOSFET can reduce power loss and improve system efficiency, and is particularly suitable for power conversion applications that require high efficiency and low loss. It is suitable for the switching part of the power module, which helps to improve the energy efficiency of the entire power system and is used in consumer electronics, industrial power supplies and other fields.
2. **DC-DC Converter**:
In a DC-DC converter, the STT10L01-VB can act as an efficient switching element for voltage conversion and current regulation. The low RDS(ON) value ensures minimal loss during current transmission, thereby improving conversion efficiency. This makes this MOSFET particularly suitable for use in efficient DC power supplies and battery chargers.
3. **Load switch control**:
In load switch control applications, STT10L01-VB can stably switch and control the current of the load, especially in power supply systems that require low power loss. It is suitable for various load switch applications, such as load control modules, protection circuits, etc., and can provide efficient and reliable current control.
4. **LED driver power supply**:
In LED lighting systems, STT10L01-VB can be used as a switching element in LED driver power supplies. Low on-resistance reduces system power loss, especially for lighting applications that require high efficiency and long life. By improving driving efficiency, this MOSFET helps optimize the operating performance and stability of LED systems.
5. **Battery Management System (BMS)**:
In battery management systems, STT10L01-VB can be used as a switching element to manage the charging and discharging process of the battery. Due to its low on-resistance and high switching speed, it can ensure that the battery works efficiently within a safe range, and is suitable for applications such as electric vehicles and battery energy storage systems, helping to improve battery efficiency and extend battery life.
6. **Automotive electronic systems**:
In automotive electronic systems, STT10L01-VB can be used in power management, on-board chargers, power control and other modules. Its high efficiency and low power consumption are particularly suitable for battery management and energy control systems in modern cars, helping to improve the endurance and energy efficiency of electric vehicles.
Through these applications, STT10L01-VB provides efficient current control and power conversion solutions in multiple fields, suitable for systems that require efficient switching, low power loss and high-frequency operation.
1. **Switching Power Supply (SMPS)**:
STT10L01-VB can be widely used in switching power supply (SMPS) modules. Due to its low on-resistance and high switching speed, this MOSFET can reduce power loss and improve system efficiency, and is particularly suitable for power conversion applications that require high efficiency and low loss. It is suitable for the switching part of the power module, which helps to improve the energy efficiency of the entire power system and is used in consumer electronics, industrial power supplies and other fields.
2. **DC-DC Converter**:
In a DC-DC converter, the STT10L01-VB can act as an efficient switching element for voltage conversion and current regulation. The low RDS(ON) value ensures minimal loss during current transmission, thereby improving conversion efficiency. This makes this MOSFET particularly suitable for use in efficient DC power supplies and battery chargers.
3. **Load switch control**:
In load switch control applications, STT10L01-VB can stably switch and control the current of the load, especially in power supply systems that require low power loss. It is suitable for various load switch applications, such as load control modules, protection circuits, etc., and can provide efficient and reliable current control.
4. **LED driver power supply**:
In LED lighting systems, STT10L01-VB can be used as a switching element in LED driver power supplies. Low on-resistance reduces system power loss, especially for lighting applications that require high efficiency and long life. By improving driving efficiency, this MOSFET helps optimize the operating performance and stability of LED systems.
5. **Battery Management System (BMS)**:
In battery management systems, STT10L01-VB can be used as a switching element to manage the charging and discharging process of the battery. Due to its low on-resistance and high switching speed, it can ensure that the battery works efficiently within a safe range, and is suitable for applications such as electric vehicles and battery energy storage systems, helping to improve battery efficiency and extend battery life.
6. **Automotive electronic systems**:
In automotive electronic systems, STT10L01-VB can be used in power management, on-board chargers, power control and other modules. Its high efficiency and low power consumption are particularly suitable for battery management and energy control systems in modern cars, helping to improve the endurance and energy efficiency of electric vehicles.
Through these applications, STT10L01-VB provides efficient current control and power conversion solutions in multiple fields, suitable for systems that require efficient switching, low power loss and high-frequency operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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