Product introduction：
STSJ2NM60-VB MOSFET Product Introduction
STSJ2NM60-VB is a single N-channel MOSFET in SOP8 package with high voltage resistance, suitable for power electronics applications requiring high voltage switching performance. The VDS of this model reaches 650V, making it an ideal choice for working in high voltage environments, especially for power conversion, power drive and high voltage switching circuits. Its gate-source voltage (VGS) is up to ±30V, with a high threshold voltage (Vth = 3.5V), and the on-resistance RDS(ON) is 2400mΩ at VGS=10V, supporting a drain current (ID) of 4A.
STSJ2NM60-VB uses Planar technology, which can provide relatively stable performance in high voltage environments and is suitable for switching applications of various high voltage loads. The high voltage resistance and moderate current carrying capacity of this MOSFET make it very suitable for power management, inverters, power transmission and other high voltage applications, and can provide reliable switching control.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
650V |
|
3.5V |
4A |
|
|
2400mΩ |
Plannar |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
650V |
|
3.5V |
4A |
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
650V |
|
3.5V |
4A |
|
Plannar |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
STSJ2NM60-VB MOSFET detailed parameter description
- **Model**: STSJ2NM60-VB
- **Package**: SOP8
- **Configuration**: Single N-channel MOSFET (Single-N-Channel)
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2400mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4A
- **Technology**: Planar
- **Operating temperature range**: -55°C to 150°C (typical)
Domain and module applications：
#STSJ2NM60-VB MOSFET Application Fields and Modules
#### 1. **Power Management**
Due to its high withstand voltage (650V) and moderate on-resistance, STSJ2NM60-VB can be widely used in power management systems, especially in high-voltage power converters and inverters. The high withstand voltage of MOSFET ensures that it can withstand the high voltage in the power circuit and work stably.
**Example**: In solar photovoltaic inverters, STSJ2NM60-VB can be used as a switching element to convert DC power into AC power, adapt to the high voltage requirements within the system, and provide stable power conversion efficiency.
#### 2. **High-voltage Motor Drive**
In motor drive applications, especially electric vehicles (EV) and industrial drive systems, STSJ2NM60-VB can be used as a switching element in high-voltage motor control systems. Its high withstand voltage performance enables it to withstand high voltage pulses in motor drive circuits.
**Example**: In the motor drive module of industrial machinery, STSJ2NM60-VB can be used for reverse control and speed regulation of the motor, helping the motor to run smoothly in a high voltage environment.
#### 3. **Switching Power Supply (SMPS)**
This MOSFET performs well in switching power supplies (SMPS), especially in high power density power modules, enabling efficient switching operations. Due to its high VDS value, it can be used as a switch tube in high voltage power modules.
**Example**: In high voltage DC-DC (DC-DC) converters, STSJ2NM60-VB can be used as a switching element to provide high efficiency voltage conversion and reduce energy loss in the power system.
#### 4. **Inverter**
STSJ2NM60-VB is also widely used in various inverters, including inverters for photovoltaic power generation and power conversion systems for electric vehicles. Its high withstand voltage and reliability make it an ideal switching element in the inverter, capable of stable operation under high voltage and high current loads.
**Example**: In the battery management system of electric vehicles, STSJ2NM60-VB can be used as the core switching element of the inverter to convert the DC power of the battery to AC power to power the motor, and can withstand the high voltage provided by the battery pack.
#### 5. **High-voltage switch control**
STSJ2NM60-VB is also suitable for other power control systems that require high withstand voltage switches, such as high-voltage power supplies, lighting controls, and power transmission systems. Its stability and reliability in high voltage environments make it an ideal choice for many power systems.
**Example**: In power distribution systems, STSJ2NM60-VB can be used as a switching element to control high-voltage circuits, helping to achieve precise current and voltage control and protect the system from overvoltage damage.
### Summary
STS2NM60-VB MOSFET, with its 650V high withstand voltage, 2400mΩ on-resistance and planar technology, has become a key switching element in many high-voltage applications. It is widely used in power management, motor drive, switching power supply, inverter and high-voltage switch control, and is an indispensable and important part of high-voltage switch systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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