Product introduction：
STS8DN3LLH5-VB MOSFET Product Introduction
The STS8DN3LLH5-VB is a dual N-channel MOSFET in a SOP8 package, manufactured using Trench technology, with extremely low on-resistance and high current handling capability. The maximum drain-source voltage (VDS) of this MOSFET is 30V, which is suitable for low-voltage, medium-current switching applications. The gate-source voltage (VGS) of the STS8DN3LLH5-VB is a maximum of 20V, and it has a low threshold voltage (Vth) of 1.7V, which enables it to be effectively turned on at low gate voltages. Its on-resistance (RDS(ON)) is very low, at 12mΩ (VGS = 4.5V) and 10mΩ (VGS = 10V), which means it can effectively reduce power losses and improve efficiency. The maximum drain current (ID) is 13.5A, which is suitable for applications requiring higher current carrying capacity. The dual-channel structure of this MOSFET makes it suitable for more complex circuit designs, especially in power management and load control modules that require dual N-channel switches.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
13.5A |
|
|
10mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
13.5A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
13.5A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
STS8DN3LLH5-VB MOSFET detailed parameter description
- **Package type**: SOP8
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 13.5A
- **Technology type**: Trench technology
- **Applications**: power management, switching power supply, load control, battery management, LED driver, consumer electronics, automotive electronics, etc.
Domain and module applications：
Application fields and module examples of STS8DN3LLH5-VB MOSFET
1. **DC-DC converter (power management)**:
The low on-resistance and high current carrying capacity of STS8DN3LLH5-VB make it very suitable for switching power supply applications in DC-DC converters. Especially in buck and boost circuits, low RDS(ON) can significantly improve energy conversion efficiency and reduce power loss, so it is widely used in portable devices, battery management systems (BMS) and other low-voltage power systems.
2. **Battery Management System (BMS)**:
In the battery management system (BMS), STS8DN3LLH5-VB can be used as a load switch and current switch for the battery to accurately control the battery charging and discharging. Its low power loss and high current carrying capacity ensure the efficient operation of the battery system. It is particularly suitable for battery protection and battery balancing management in electric vehicles (EV), electric bicycles and portable devices.
3. **LED drive circuit**:
In the LED drive circuit, STS8DN3LLH5-VB acts as a switching element to efficiently control the current and optimize the working efficiency of the LED module. Low RDS(ON) can reduce power loss and improve driving efficiency, and is widely used in smart lighting and high-efficiency LED lighting systems.
4. **Consumer electronics (smart home, IoT devices)**:
STS8DN3LLH5-VB is suitable for power management and load control in smart home and Internet of Things (IoT) devices. In these applications, the MOSFET provides efficient power switching functions and is widely used in devices such as smart sockets, wireless sensors, and smart home control systems to provide precise current control and improve energy efficiency.
5. **Automotive electronics (on-board power management)**:
In the field of automotive electronics, STS8DN3LLH5-VB can be used for battery management, power regulation, and load control modules. It is suitable for use in the power systems of electric vehicles (EVs), hybrid electric vehicles (HEVs) and traditional vehicles, responsible for battery charge and discharge management, on-board chargers and power conversion, ensuring the efficiency and safety of the power system.
6. **Wireless Communication and RF Amplifiers**:
In wireless communication equipment and RF amplifiers, the STS8DN3LLH5-VB can be used for current switching regulation due to its efficient switching characteristics, especially in applications requiring high switching frequency and low power loss. This MOSFET can optimize energy transmission and improve equipment performance in wireless communication systems.
7. **Industrial Automation and Power Tools**:
In industrial automation and power tools, the STS8DN3LLH5-VB can be used as a load switch control and motor drive circuit, providing precise current switching and regulation to meet the needs of industrial equipment for high efficiency and low power consumption. Its high current handling capability and low on-resistance enable it to maintain stable performance in harsh working environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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