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STS7C4F30L-VB Product details

Product introduction:

**Product Introduction: STS7C4F30L-VB**

STS7C4F30L-VB is a dual-channel MOSFET (N+P channel) in SOP8 package, designed for low-voltage high-efficiency switch control applications. The device has a maximum drain-source voltage (VDS) of ±30V, suitable for bipolar power supply design and load control. The gate-source threshold voltage (Vth) of this MOSFET is 1.6V (N-Channel) and -1.7V (P-Channel), which can start working at a lower gate voltage and is compatible with low-voltage logic levels. Its on-resistance (RDS(ON)) is 24mΩ (N-Channel) and 50mΩ (P-Channel) at VGS=4.5V, and 18mΩ (N-Channel) and 40mΩ (P-Channel) at VGS=10V. The maximum drain current (ID) is ±8A, making it suitable for switch control of medium power loads. The STS7C4F30L-VB uses Trench technology to optimize on-resistance and thermal management, providing efficient current control and low-power operation.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A 18/40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P
**Detailed parameter description: **

- **Model**: STS7C4F30L-VB
- **Package type**: SOP8
- **Configuration**: Dual channel (N+P-Channel)
- **Maximum drain-source voltage (VDS)**: ±30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**:
- N-Channel: 1.6V
- P-Channel: -1.7V
- **On-resistance (RDS(ON))**:
- N-Channel @ VGS=4.5V: 24mΩ
- P-Channel @ VGS=4.5V: 50mΩ
- N-Channel @ VGS=10V: 18mΩ
- P-Channel @ VGS=10V:40mΩ
- **Maximum leakage current (ID)**:
- N-Channel:±8A
- P-Channel:±8A
- **Technology type**:Trench (deep trench technology)
- **Operating temperature range**:-55°C to +150°C
- **Application type**:Low power power management, motor drive, load switch, bipolar power conversion, DC-DC converter, etc.

Domain and module applications:

**Application fields and module examples:**

1. **Low-power power management**:
STS7C4F30L-VB performs well in low-power power management applications. Due to its low on-resistance, it is particularly suitable for high-efficiency conversion under low voltage (such as 5V or 12V power supply). The dual N+P channel design allows it to control the switching of positive and negative voltages simultaneously under bipolar power supply, achieving more accurate and efficient power management. It can be applied to power modules of various portable devices, communication equipment and small household appliances.

2. **Motor drive system**:
The dual N+P channel configuration of this MOSFET makes it very suitable for motor drive systems, especially in situations where positive and negative power supplies are required. STS7C4F30L-VB can be used in the drive circuit of DC motors or stepper motors to provide efficient motor control by accurately controlling the direction and size of the current. Its low on-resistance (e.g., N-Channel: 18mΩ@VGS=10V) ensures that energy loss during current control is minimized, improving system efficiency.

3. **Load switch control**:
This MOSFET is suitable for various load switch control applications, such as switching power supplies, relay drives, load isolation, etc. It can effectively control medium-power loads (maximum leakage current ±8A), and is very suitable for applications in automotive electronics, consumer electronics, and battery management systems (BMS). Its low on-resistance also ensures that energy loss is small during load switching.

4. **Bipolar power conversion**:
In bipolar power conversion applications, the dual-channel design of the STS7C4F30L-VB provides great flexibility. For example, both positive voltage control and negative voltage switch control are required in the power converter. By integrating N-type and P-type MOSFETs in the same device, the STS7C4F30L-VB can optimize system design, reduce component count and cost, and improve the overall reliability and efficiency of the system.

5. **DC-DC Converter**:
As a switching element, the STS7C4F30L-VB can be used in various DC-DC converters, especially those that require bipolar power input or output. It can be used in applications such as buck, boost, and isolated DC-DC converters. Due to its low on-resistance and large current carrying capacity, it can efficiently convert power and reduce heat loss, ensuring long-term stable operation of the system.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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