Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
100V |
|
1.8V |
4.2A |
|
|
124mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
100V |
|
1.8V |
4.2A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
100V |
|
1.8V |
4.2A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description:
1. **VDS (drain-source voltage)**: 100V
- This parameter indicates the maximum drain-source voltage that the MOSFET can withstand. The 100V VDS provides a relatively wide voltage adaptation range for this device, which can support moderate voltage requirements and is suitable for medium voltage power management systems.
2. **VGS (gate-source voltage)**: ±20V
- The range of gate-source voltage determines the working state of the MOSFET. The gate voltage of ±20V is suitable for common drive circuits, ensuring that the MOSFET can work stably in various application scenarios.
3. **Vth (threshold voltage)**: 1.8V
- The threshold voltage is the minimum gate voltage that causes the MOSFET to change from the off state to the on state. The 1.8V threshold enables the MOSFET to turn on quickly at a lower gate voltage, which helps to achieve fast switching control.
4. **RDS(ON)（On-resistance）**：
- **124mΩ @ VGS = 10V**
- **128mΩ @ VGS = 4.5V**
- RDS(ON) reflects the resistance of the MOSFET when it is on. The lower the on-resistance, the less power loss and heat generation. In this model, the on-resistance is 124mΩ at VGS = 10V, which is suitable for applications requiring lower power loss and higher current efficiency.
5. **ID（Drain current）**：4.2A
- The maximum drain current that this MOSFET can handle is 4.2A, which is suitable for power systems and load control with medium current levels.
6. **Technology**：Trench technology
- Trench technology MOSFETs have lower on-resistance, higher switching speed and lower switching loss, which are suitable for high-efficiency switching power supplies and other high-frequency applications.
---
Domain and module applications：
Applicable fields and module examples:
1. **Power management and DC-DC converter**:
STS2NF100-VB is suitable for various DC-DC converters and power management systems, especially in medium-power power supply designs requiring voltages below 100V. Its low on-resistance and high switching efficiency make it an ideal choice in the power conversion process, which can improve energy conversion efficiency and reduce heat loss.
2. **Power amplifier and motor drive**:
In power amplifier and motor drive applications, STS2NF100-VB can be used to control current switches for more precise current regulation. It is suitable for use in motor drive systems that require high switching speeds and medium currents, ensuring fast response and high efficiency.
3. **LED drive power supply**:
In LED drive power supplies, STS2NF100-VB can be used for efficient current control and voltage regulation, especially for applications requiring lower power loss. The low on-resistance characteristics of MOSFET help improve the overall energy efficiency of the LED drive system and reduce heat problems caused by power loss.
4. **Industrial Power and Battery Management**:
This MOSFET is widely used in industrial power systems such as uninterruptible power supplies (UPS) or battery management systems (BMS). Its low RDS(ON) ensures high efficiency and reduces heat generation, suitable for battery control and power systems that require high stability and high reliability.
5. **Automotive Electronic Systems**:
In automotive electronic systems, the STS2NF100-VB can be used as a switching element in battery management systems, electric drive systems, and power conversion systems. Due to its high switching speed and low on-resistance, it can efficiently handle current and operate under high frequency and high voltage conditions, suitable for electric vehicle power systems and charging equipment.
6. **Switching Power Supply (SMPS)**:
In the switching power supply (SMPS), the STS2NF100-VB can effectively handle high-frequency switching and is suitable for medium and low power power modules. Low RDS(ON) and efficient switching performance make it a key component to improve the efficiency of SMPS systems, especially suitable for various consumer electronics, communication equipment and small power modules.
Through these applications, STS2NF100-VB can provide efficient current switching control and low power loss in multiple fields to meet the needs of various power management and switching power supply systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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