STS2621-VB Product details
Product introduction:
STS2621-VB is a dual-channel MOSFET in SOT23-6 package, including a P-type channel and an N-type channel, suitable for low-voltage power supply and switching applications. Its maximum drain-source voltage (V_DS) is -20V, the maximum drain current (I_D) is -4A, and it has a low on-resistance: 100mΩ at V_GS = 2.5V, 75mΩ at V_GS = 4.5V. The threshold voltage (V_th) of this MOSFET is -0.6V and it is manufactured using Trench technology, which is suitable for high-efficiency, low-power power management and load switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
- **Model**: STS2621-VB
- **Package**: SOT23-6
- **Configuration**: Dual P-type + N-type channel
- **V_DS (drain-source voltage)**: -20V
- **V_GS (gate-source voltage)**: ±12V
- **V_threshold voltage)**: -0.6V
- **R_DS(ON) (on-resistance)**: 100mΩ @ V_GS = 2.5V
- **R_DS(ON) (on-resistance)**: 75mΩ @ V_GS = 4.5V
- **I_D (leakage current)**: -4A
- **Technology**: Trench (trench technology)
Domain and module applications:
1. **Low-voltage power management**: The dual-channel configuration and low on-resistance of the STS2621-VB make it very suitable for low-voltage power management systems. For example, in portable devices such as smartphones, tablets, and battery-powered devices, this MOSFET can be used as a power switch or load switch to improve battery efficiency and reduce power consumption.
2. **Load switch and battery management**: In a battery management system (BMS), the STS2621-VB can be used in a battery protection circuit to control the battery charge and discharge process. Due to its low on-resistance and negative voltage capability, it can effectively control the connection and disconnection of the load and protect the battery from overcurrent and overvoltage damage.
3. **DC-DC converter**: This MOSFET is also suitable for low-voltage DC-DC converters, especially in low-power applications. Its low on-resistance and high efficiency characteristics enable it to improve efficiency and reduce energy loss in regulated power supplies and battery-powered power converters, and is suitable for a variety of low-power electronic products.
4. **Automotive Electronics Applications**: In automotive power systems, the STS2621-VB can be used for low-voltage power conversion and load control, such as battery voltage regulation, power switching, and current control circuits in electric drive systems. Its negative voltage and high voltage resistance make it suitable for a variety of power management and protection circuits in vehicles.
5. **Communications and Embedded Systems**: For communication equipment and embedded systems, the STS2621-VB can provide efficient switching control in power management modules, suitable for power distribution and voltage stabilization applications in low-power devices such as routers and embedded development boards.
Due to its low on-resistance and good current carrying capacity, the STS2621-VB is widely used in high-efficiency, low-power power management, load switching, battery protection and other scenarios.
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