Product introduction：
Product Introduction: STS1C1S250-VB
**Model**: STS1C1S250-VB
**Package type**: SOP8
**Configuration**: Dual N+P channels
**Operating voltage (VDS)**: ±250V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 3V / -3V
**On-resistance (RDS(ON))**:
- **N channel**:
- 135mΩ @ VGS = 4.5V
- 95mΩ @ VGS = 10V
- **P channel**:
- 285mΩ @ VGS = 4.5V
- 243mΩ @ VGS = 10V
**Maximum leakage current (ID)**: ±1.1A
**Technology type**: Trench technology
The STS1C1S250-VB is a high-performance dual N+P channel MOSFET in a SOP8 package, designed for high voltage applications, with a drain-source voltage tolerance of ±250V. Its low on-resistance and high current capability make it suitable for a wide range of applications in power management and switching circuits, especially in scenarios where dual-channel MOSFETs are required, for efficient current control. This device uses Trench technology to provide lower conduction losses and higher switching efficiency, making it an ideal choice for high voltage, high current applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±250V |
|
3/-3V |
±1.1A |
|
|
95/243mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±250V |
|
3/-3V |
±1.1A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±250V |
|
3/-3V |
±1.1A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
Detailed parameter description:
1. **VDS (drain-source voltage)**: ±250V
- This parameter indicates the maximum drain-source voltage that the MOSFET can withstand. The ±250V VDS enables the device to be used in higher voltage power systems, providing greater voltage protection and stability.
2. **VGS (gate-source voltage)**: ±20V
- The range of the gate-source voltage determines the operating state of the MOSFET. The ±20V gate voltage is suitable for a wide range of drive circuits, ensuring that the MOSFET can operate stably in a variety of applications.
3. **Vth (threshold voltage)**: 3V (N-channel) / -3V (P-channel)
- The threshold voltage is the minimum gate voltage that causes the MOSFET to transition from the off state to the on state. For the N-channel MOSFET, the threshold voltage is 3V, while the threshold voltage of the P-channel MOSFET is -3V. This symmetrical threshold voltage design helps improve the operating performance of the dual-channel MOSFET.
4. **RDS(ON)（On-resistance）**：
- **N-channel**：
- 135mΩ @ VGS = 4.5V
- 95mΩ @ VGS = 10V
- **P-channel**：
- 285mΩ @ VGS = 4.5V
- 243mΩ @ VGS = 10V
- RDS(ON) represents the resistance when the MOSFET is on. Lower RDS(ON) helps reduce power loss and heat generation, especially in high current applications. The on-resistance of N-channel and P-channel is excellent, providing efficient current transfer.
5. **ID（Drain Current）**：±1.1A
- The maximum drain current is ±1.1A, which is suitable for small and medium current switch control and power management.
6. **Technology**: Trench Technology
- Trench technology helps improve MOSFET switching efficiency and reduce on-resistance, enabling the device to provide excellent performance in high-frequency and high-current applications.
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Domain and module applications：
Application fields and module examples:
1. **Power management and DC-DC converter**:
STS1C1S250-VB is suitable for various power management systems, especially DC-DC converters. In these applications, the dual N+P channel structure enables it to efficiently control current, especially in power conversion circuits that require high voltage and high efficiency, such as in battery management and mobile devices.
2. **Inverter and UPS (Uninterruptible Power Supply)**:
In inverter and UPS systems, STS1C1S250-VB can be used as a switching element to help convert direct current (DC) to alternating current (AC) or reverse operation. In these high-voltage applications, dual-channel MOSFETs can provide reliable current switching and efficient energy conversion, ensuring the stability and efficiency of power supply.
3. **Power amplifier and motor drive**:
This type of MOSFET is also widely used in power amplifier and motor drive systems. Especially in motor drive circuits, dual N+P channel MOSFETs provide more efficient current conduction and switching control, and can effectively manage the starting, stopping and speed control of motors.
4. **Automotive Electronic Systems**:
In automotive electronic devices, such as battery management systems (BMS) and power system control of electric vehicles, STS1C1S250-VB can work stably under high voltage conditions and provide efficient switching performance. This is crucial for the stability and energy efficiency of automotive electronic systems.
5. **Switching Power Supply (SMPS)**:
STS1C1S250-VB is suitable for switching power supply modules, especially in high-power and high-voltage applications. By using dual-channel MOSFETs, more precise and efficient current management can be achieved, helping to improve the performance and energy efficiency of power modules.
6. **LED Drive and Battery Management**:
In LED drive power supplies, dual N+P channel MOSFETs can effectively control current, reduce energy loss and improve efficiency. In addition, it can also be used in battery management systems (BMS) for precise control of battery voltage and current to ensure battery safety and extend its service life.
Through these applications, the STS1C1S250-VB provides high performance and stability in high-voltage, high-current applications, making it an ideal choice, especially for complex circuit designs that require dual-channel MOSFETs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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