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STQ2NK60ZR-AP-VB Product details
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1. **STQ2NK60ZR-AP-VB Product Introduction**
**STQ2NK60ZR-AP-VB** is a **unipolar-N-type MOSFET** suitable for high voltage switching applications. The **drain-source voltage (VDS)** of this MOSFET can reach a maximum of **600V**, and the **gate-source voltage (VGS)** is rated at **±20V**, which is suitable for applications requiring high voltage switching. Its **threshold voltage (Vth)** is **2V**, ensuring reliable switching characteristics. Its **on-resistance (RDS(ON))** is **6667mΩ** at **VGS=10V**, providing lower on-resistance, which helps improve power conversion efficiency and reduce heat generation during operation. The device adopts **TO92** package, which is suitable for applications that require high performance and are space-constrained.
**STQ2NK60ZR-AP-VB** is a **unipolar-N-type MOSFET** suitable for high voltage switching applications. The **drain-source voltage (VDS)** of this MOSFET can reach a maximum of **600V**, and the **gate-source voltage (VGS)** is rated at **±20V**, which is suitable for applications requiring high voltage switching. Its **threshold voltage (Vth)** is **2V**, ensuring reliable switching characteristics. Its **on-resistance (RDS(ON))** is **6667mΩ** at **VGS=10V**, providing lower on-resistance, which helps improve power conversion efficiency and reduce heat generation during operation. The device adopts **TO92** package, which is suitable for applications that require high performance and are space-constrained.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | 6667mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N |
2. **Detailed parameter description**
- **Model**: STQ2NK60ZR-AP-VB
- **Package type**: TO92
- **Configuration**: Unipolar-N type
- **Drain-source voltage (VDS)**: **600V** — Indicates the maximum drain-to-source voltage that the MOSFET can withstand.
- **Gate-source voltage (VGS)**: **±20V** — Indicates the maximum gate-to-source voltage that the MOSFET can withstand.
- **Threshold voltage (Vth)**: **2V** — When the gate-source voltage reaches this value, the MOSFET starts to turn on.
- **On-resistance (RDS(ON))**: **6667mΩ** @ **VGS=10V** — Indicates the on-resistance of the MOSFET from drain to source when the gate voltage is 10V. Lower RDS(ON) helps reduce power loss.
- **Maximum Drain Current (ID)**: **1A** — Indicates the maximum continuous current that the MOSFET can carry under rated VDS and VGS conditions.
- **Technology Type**: **Planar** — Uses standard planar technology, which is widely used in discrete power MOSFETs.
- **Model**: STQ2NK60ZR-AP-VB
- **Package type**: TO92
- **Configuration**: Unipolar-N type
- **Drain-source voltage (VDS)**: **600V** — Indicates the maximum drain-to-source voltage that the MOSFET can withstand.
- **Gate-source voltage (VGS)**: **±20V** — Indicates the maximum gate-to-source voltage that the MOSFET can withstand.
- **Threshold voltage (Vth)**: **2V** — When the gate-source voltage reaches this value, the MOSFET starts to turn on.
- **On-resistance (RDS(ON))**: **6667mΩ** @ **VGS=10V** — Indicates the on-resistance of the MOSFET from drain to source when the gate voltage is 10V. Lower RDS(ON) helps reduce power loss.
- **Maximum Drain Current (ID)**: **1A** — Indicates the maximum continuous current that the MOSFET can carry under rated VDS and VGS conditions.
- **Technology Type**: **Planar** — Uses standard planar technology, which is widely used in discrete power MOSFETs.
Domain and module applications：
### 3. **Application fields and modules**
**STQ2NK60ZR-AP-VB** MOSFET is suitable for a variety of high voltage, low current applications. The following are examples of the application of this device in different fields and modules:
#### a) **Power supply and converter**
**STQ2NK60ZR-AP-VB** can be used in **switching power supply (SMPS)**, especially those requiring high voltage switching. Its **VDS** of 600V can meet the needs of AC-DC and DC-DC converters. The lower **RDS(ON)** can reduce power loss and improve efficiency.
#### b) **Motor control circuit**
This MOSFET is suitable for **motor control circuits**, as a switch when driving low current DC motors. Its high **VDS** can handle the high voltage applications commonly found in industrial motors.
#### c) **Lighting and Ballast Control**
**STQ2NK60ZR-AP-VB** can be used in **lighting systems**, especially in high voltage fluorescent lamp ballasts and other electronic lighting control systems. It can withstand high voltage AC signals and is suitable for controlling power supply.
#### d) **Automotive Applications**
In automotive **DC-DC converters** or **voltage regulators**, this MOSFET can control the power supply and is widely used in electric vehicles (EV) and other automotive electronic systems. Its **VDS** of 600V is well suited for automotive battery systems.
#### e) **Inductive Load Switching**
This MOSFET is well suited for **inductive load switching**, such as in **relays**, **solenoids** and **electromagnetic devices**, and can efficiently control power and is suitable for low current applications where high voltage switching is required.
#### f) **Consumer electronics**
In **TVs**, **home appliances** or other consumer electronics, the **STQ2NK60ZR-AP-VB** can be used for **power management** to ensure efficient switching in power circuits.
#### g) **Signal switching**
This MOSFET can also be used for **high voltage signal switching**, suitable for **test and measurement instruments** or **communication equipment** high voltage signal control.
These applications show the versatility of the **STQ2NK60ZR-AP-VB**, which is suitable for multiple fields and can provide efficient power management and signal switching in different modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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