STQ2HNK60ZR-AP-VB Product details
Product introduction:
**STQ2HNK60ZR-AP-VB** is a unipolar N-channel MOSFET in TO92 package. The product has a drain-source voltage (VDS) of 600V, supports a gate-source voltage (VGS) of 20V, and has a gate threshold voltage (Vth) of 2V. Its on-resistance (RDS(ON)) is 6.667Ω @ VGS = 10V, and it can provide a maximum drain current (ID) of 1A. This MOSFET uses Plannar technology and has excellent electrical performance and reliability. This model is particularly suitable for low-power applications such as small switching power supplies and signal amplification circuits.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | 6667mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N |
- **Package type**: TO92
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**: 6.667Ω @ VGS = 10V
- **Drain current (ID)**: 1A
- **Technology**: Plannar technology
- **Operating temperature range**: Typically applicable to room temperature to 150°C (depending on the datasheet)
Domain and module applications:
1. **Switching power supply (SMPS)**:
Since the STQ2HNK60ZR-AP-VB can withstand drain-source voltages up to 600V, it is suitable for high-voltage switching power supplies for low-power power management applications, such as power modules in home appliances or portable devices.
2. **Battery management system**:
The 1A current carrying capacity and low on-resistance of this MOSFET make it suitable for battery management systems, especially in small battery chargers and battery protection modules. It helps improve system efficiency and ensure battery stability and safety.
3. **High-frequency switching circuit**:
Due to its low gate threshold voltage (2V), the STQ2HNK60ZR-AP-VB is very suitable for high-frequency switching applications such as signal processing and electromagnetic spectrum analyzers. This enables it to effectively reduce power losses in low-power, high-frequency switching systems.
4. **Remote Control Systems and Consumer Electronics**:
The low power characteristics of this MOSFET make it suitable for drive circuits in remote control systems. It can be used in modules such as small switching power supplies and amplifier circuits in remote controls and wireless electronic devices.
5. **Automotive Electronic Modules**:
This MOSFET can also be used in automotive electronic systems, especially low-power electronic control units (ECUs) and sensor modules. It can provide a stable power supply for the system and effectively handle a variety of input voltages.
Through these application examples, it can be seen that the STQ2HNK60ZR-AP-VB is suitable for many low-power, high-voltage working environments, especially in situations where efficient and reliable switching elements are required.
Technical support:
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