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STQ1HNK60R-VB Product details
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Product Introduction
The STQ1HNK60R-VB is a single N-type power MOSFET in a TO92 package with a drain-source voltage (V_DS) of 600V and a maximum drain current (I_D) of 1A. Its gate-source voltage (V_GS) can withstand high voltages of ±20V. The MOSFET has an on-resistance (R_DS(ON)) of 6.667Ω at a V_GS of 10V, and its threshold voltage (V_th) is 2V. The device is manufactured based on Planar technology and is suitable for applications that require higher voltage tolerance and lower power consumption.
The STQ1HNK60R-VB is a single N-type power MOSFET in a TO92 package with a drain-source voltage (V_DS) of 600V and a maximum drain current (I_D) of 1A. Its gate-source voltage (V_GS) can withstand high voltages of ±20V. The MOSFET has an on-resistance (R_DS(ON)) of 6.667Ω at a V_GS of 10V, and its threshold voltage (V_th) is 2V. The device is manufactured based on Planar technology and is suitable for applications that require higher voltage tolerance and lower power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | 6667mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N |
Detailed parameter description
- **Model**: STQ1HNK60R-VB
- **Package**: TO92
- **Configuration**: Single N-type channel
- **V_DS (drain-source voltage)**: 600V
- **V_GS (gate-source voltage)**: ±20V
- **V_th (threshold voltage)**: 2V
- **R_DS(ON) (on-resistance)**: 6.667Ω @ V_GS = 10V
- **I_D (leakage current)**: 1A
- **Technology**: Planar (planar technology)
- **Model**: STQ1HNK60R-VB
- **Package**: TO92
- **Configuration**: Single N-type channel
- **V_DS (drain-source voltage)**: 600V
- **V_GS (gate-source voltage)**: ±20V
- **V_th (threshold voltage)**: 2V
- **R_DS(ON) (on-resistance)**: 6.667Ω @ V_GS = 10V
- **I_D (leakage current)**: 1A
- **Technology**: Planar (planar technology)
Domain and module applications：
Application fields and module examples
1. **Power management module**: STQ1HNK60R-VB plays an important role in power management applications, especially for high-voltage power systems. Its drain-source voltage of up to 600V makes it suitable for higher voltage switching power supply circuits, such as AC-DC converters, DC-DC converters, and power factor correction (PFC) circuits.
2. **Low power circuit**: Due to its low on-resistance (6.667Ω), this MOSFET is also used in low-power circuits, suitable for energy-saving designs and battery-driven devices, such as power switch modules for portable devices, which can effectively control power loss and improve overall efficiency.
3. **Automotive electronics**: The high voltage withstand capability of this MOSFET makes it very suitable for automotive power management systems, including high-voltage DC power converters and battery management systems (BMS), which can withstand high voltages in vehicle battery systems to ensure system safety and stability.
4. **High-voltage switching circuit**: In high-voltage control systems, STQ1HNK60R-VB can be used for switching circuits, such as motor control in home appliances, power control in lighting systems, etc. Its high withstand voltage characteristics enable it to work stably in these environments, ensuring the reliability of the system.
Through these application areas, we can see that STQ1HNK60R-VB is a MOSFET with strong withstand voltage capability and low power consumption, suitable for a variety of high-performance, low-power high-voltage applications.
1. **Power management module**: STQ1HNK60R-VB plays an important role in power management applications, especially for high-voltage power systems. Its drain-source voltage of up to 600V makes it suitable for higher voltage switching power supply circuits, such as AC-DC converters, DC-DC converters, and power factor correction (PFC) circuits.
2. **Low power circuit**: Due to its low on-resistance (6.667Ω), this MOSFET is also used in low-power circuits, suitable for energy-saving designs and battery-driven devices, such as power switch modules for portable devices, which can effectively control power loss and improve overall efficiency.
3. **Automotive electronics**: The high voltage withstand capability of this MOSFET makes it very suitable for automotive power management systems, including high-voltage DC power converters and battery management systems (BMS), which can withstand high voltages in vehicle battery systems to ensure system safety and stability.
4. **High-voltage switching circuit**: In high-voltage control systems, STQ1HNK60R-VB can be used for switching circuits, such as motor control in home appliances, power control in lighting systems, etc. Its high withstand voltage characteristics enable it to work stably in these environments, ensuring the reliability of the system.
Through these application areas, we can see that STQ1HNK60R-VB is a MOSFET with strong withstand voltage capability and low power consumption, suitable for a variety of high-performance, low-power high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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