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STP9NB60FP-VB Product details
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# 1. Product Introduction
STP9NB60FP-VB is a high-performance N-channel MOSFET in TO220F package, suitable for applications requiring high voltage and high current control. The maximum drain-source voltage (VDS) of this MOSFET is 650V, and the maximum drain current (ID) is 12A, which is suitable for high voltage and high efficiency applications such as power management, inverters, motor control, etc. STP9NB60FP-VB has a low on-resistance (RDS(ON) = 680mΩ @ VGS = 10V), which can reduce power loss and improve the overall efficiency of the system. Due to the use of Plannar technology, STP9NB60FP-VB has excellent switching characteristics, suitable for high-frequency switching applications, and can work stably at high temperatures.
Typical applications of this MOSFET include power conversion, motor drive, DC-DC converter, and various high-voltage power modules. Its superior current carrying capacity and high voltage resistance make it widely used in the field of power electronics.
STP9NB60FP-VB is a high-performance N-channel MOSFET in TO220F package, suitable for applications requiring high voltage and high current control. The maximum drain-source voltage (VDS) of this MOSFET is 650V, and the maximum drain current (ID) is 12A, which is suitable for high voltage and high efficiency applications such as power management, inverters, motor control, etc. STP9NB60FP-VB has a low on-resistance (RDS(ON) = 680mΩ @ VGS = 10V), which can reduce power loss and improve the overall efficiency of the system. Due to the use of Plannar technology, STP9NB60FP-VB has excellent switching characteristics, suitable for high-frequency switching applications, and can work stably at high temperatures.
Typical applications of this MOSFET include power conversion, motor drive, DC-DC converter, and various high-voltage power modules. Its superior current carrying capacity and high voltage resistance make it widely used in the field of power electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 680mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 12A
- **Maximum power dissipation**: 100W
- **Operating temperature range**: -55°C to +150°C
- **Maximum junction temperature**: 150°C
- **Maximum gate-source voltage (VGS)**: ±30V
**Typical parameters**:
- **VDS (drain-source voltage)**: 650V, suitable for high voltage applications.
- **RDS(ON) (on resistance)**: 680mΩ @ VGS = 10V, providing good conduction characteristics, suitable for high-efficiency switching applications.
- **ID (maximum drain current)**: 12A, suitable for medium and high power load applications.
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 680mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 12A
- **Maximum power dissipation**: 100W
- **Operating temperature range**: -55°C to +150°C
- **Maximum junction temperature**: 150°C
- **Maximum gate-source voltage (VGS)**: ±30V
**Typical parameters**:
- **VDS (drain-source voltage)**: 650V, suitable for high voltage applications.
- **RDS(ON) (on resistance)**: 680mΩ @ VGS = 10V, providing good conduction characteristics, suitable for high-efficiency switching applications.
- **ID (maximum drain current)**: 12A, suitable for medium and high power load applications.
Domain and module applications：
III. Application fields and module examples
**1. Power management and power conversion**
STP9NB60FP-VB has high switching performance and high voltage resistance, and is suitable for power conversion and voltage regulation in power management systems. Its high voltage tolerance makes it very suitable for use in AC-DC or DC-AC converters, and can provide stable switching control in high-voltage applications. In power electronics, it can be used as the main switching element to handle the conversion of AC or DC power, and is commonly found in power modules, power supplies, solar inverters and other applications.
**2. Motor drive system**
STP9NB60FP-VB is suitable for use as a switching element in motor drive systems. Motor drive applications often need to handle higher voltages and currents. STP9NB60FP-VB can work stably under these conditions and provide efficient current control through low on-resistance. This MOSFET is particularly suitable for motor control systems in industrial automation, power tools, and electric vehicles (such as electric bicycles, electric scooters, etc.).
**3. DC-DC Converters**
The low on-resistance and high drain current carrying capacity of this MOSFET make it suitable for DC-DC converters, especially for applications that need to operate at higher voltages. Through its efficient switching performance, the STP9NB60FP-VB can optimize conversion efficiency in low-power power supplies or high-power conversion, and is widely used in power modules for adjustable power supplies, battery management systems, power tools and other equipment.
**4. Inverters and Power Conditioning**
In solar inverters, electric vehicle inverters and wind energy systems, the STP9NB60FP-VB can be used as a switching element to effectively convert DC power to AC power. This MOSFET supports high-frequency switching operations and can withstand high-voltage loads, making it suitable for various renewable energy power conditioning and conversion systems.
**5. High-efficiency switching power supplies and voltage regulators**
The STP9NB60FP-VB is also widely used in high-efficiency switching power supplies and voltage regulators. It provides stable switching performance in high-voltage applications, can handle higher current and voltage fluctuations, and ensure the reliability and high efficiency of the power supply. It can be used in various types of power supply voltage regulation, AC adapters, and battery chargers.
**6. High-frequency switching applications**
Because the STP9NB60FP-VB uses Plannar technology, it has very excellent switching characteristics and is suitable for use in high-frequency switching circuits. This allows the MOSFET to operate efficiently in high-frequency switching mode, suitable for communication equipment, telecommunications base station power supplies, and other applications that require high-frequency and high-voltage switching.
**1. Power management and power conversion**
STP9NB60FP-VB has high switching performance and high voltage resistance, and is suitable for power conversion and voltage regulation in power management systems. Its high voltage tolerance makes it very suitable for use in AC-DC or DC-AC converters, and can provide stable switching control in high-voltage applications. In power electronics, it can be used as the main switching element to handle the conversion of AC or DC power, and is commonly found in power modules, power supplies, solar inverters and other applications.
**2. Motor drive system**
STP9NB60FP-VB is suitable for use as a switching element in motor drive systems. Motor drive applications often need to handle higher voltages and currents. STP9NB60FP-VB can work stably under these conditions and provide efficient current control through low on-resistance. This MOSFET is particularly suitable for motor control systems in industrial automation, power tools, and electric vehicles (such as electric bicycles, electric scooters, etc.).
**3. DC-DC Converters**
The low on-resistance and high drain current carrying capacity of this MOSFET make it suitable for DC-DC converters, especially for applications that need to operate at higher voltages. Through its efficient switching performance, the STP9NB60FP-VB can optimize conversion efficiency in low-power power supplies or high-power conversion, and is widely used in power modules for adjustable power supplies, battery management systems, power tools and other equipment.
**4. Inverters and Power Conditioning**
In solar inverters, electric vehicle inverters and wind energy systems, the STP9NB60FP-VB can be used as a switching element to effectively convert DC power to AC power. This MOSFET supports high-frequency switching operations and can withstand high-voltage loads, making it suitable for various renewable energy power conditioning and conversion systems.
**5. High-efficiency switching power supplies and voltage regulators**
The STP9NB60FP-VB is also widely used in high-efficiency switching power supplies and voltage regulators. It provides stable switching performance in high-voltage applications, can handle higher current and voltage fluctuations, and ensure the reliability and high efficiency of the power supply. It can be used in various types of power supply voltage regulation, AC adapters, and battery chargers.
**6. High-frequency switching applications**
Because the STP9NB60FP-VB uses Plannar technology, it has very excellent switching characteristics and is suitable for use in high-frequency switching circuits. This allows the MOSFET to operate efficiently in high-frequency switching mode, suitable for communication equipment, telecommunications base station power supplies, and other applications that require high-frequency and high-voltage switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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