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STP9NA50FI-VB Product details

Product introduction:

1. **Product Introduction**

STP9NA50FI-VB is a high-performance N-type MOSFET in TO220F package, designed for medium and high voltage power switching and high efficiency applications. Its maximum drain-source voltage (V_DS) is 650V, capable of supporting drain currents up to 12A, making it ideal for high voltage and high current applications. The device uses **Plannar** technology with low on-resistance (R_DS(ON) = 680mΩ @ V_GS = 10V), ensuring low power loss and efficient switching performance under high power operation. STP9NA50FI-VB is suitable for power electronics applications requiring high voltage and high reliability, including power supplies, inverters, motor drives and other fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 12A 680mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 12A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 12A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
2. **Detailed parameter description**

- **Package type**: TO220F
- **Configuration**: Single N-type MOSFET
- **Maximum drain-source voltage (V_DS)**: 650V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**:
- 680mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 12A
- **Maximum power loss (P_d)**: 125W
- **Maximum junction temperature (T_j)**: 150°C
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (R_thJC)**: 1.5°C/W
- **Thermal resistance (R_thJA)**: 62.5°C/W (natural cooling)
- **Technology type**: Plannar

Domain and module applications:

**Applications and Modules**

#### **Power Management and Switching Power Supply**
STP9NA50FI-VB is suitable for various power management and switching power supply applications, especially those requiring high voltage and high power handling. Due to its maximum drain-source voltage of 650V, the device is suitable for use in AC-DC conversion, power modules, DC-DC converters and other fields. In high-efficiency power management systems, STP9NA50FI-VB can achieve efficient energy conversion with low on-resistance, reduce power loss and improve overall system efficiency.

#### **Motor Drive and Control**
This MOSFET is also very suitable for motor drive systems, especially in high-voltage motor control applications. Whether it is an industrial automation system, home appliances or power tools, the device can withstand high drain-source voltage and large current, and is suitable for controlling the start, operation and speed regulation of the motor. The low on-resistance and good thermal management characteristics of STP9NA50FI-VB can effectively improve the stability and efficiency of the motor drive system.

#### **Inverter and inverter**
In inverter and inverter applications, STP9NA50FI-VB acts as a power switching element to efficiently convert electrical energy and control the speed and torque of the motor. Due to its high voltage resistance, it can work stably in high voltage environments and is suitable for use in power electronic devices such as solar inverters, wind power generation systems, and variable frequency drive systems. Its high conductivity and low power consumption can reduce heat generation, thereby improving the reliability and life of the system.

#### **Power Electronics and Battery Management System (BMS)**
STP9NA50FI-VB can also be used in power conversion modules, battery management systems (BMS), etc. in the field of power electronics. In these applications, the device can withstand higher voltages and stably handle battery charge and discharge control. Its efficient switching characteristics and low on-resistance make it an ideal choice for high-voltage power supply applications such as electric vehicles, UPS (uninterruptible power supply) systems, and battery charging stations.

#### **Industrial Electrical and Control Systems**
STP9NA50FI-VB can be used in industrial electrical control systems, especially those requiring high voltage switching. Its high voltage handling capability and high current carrying capacity make it very suitable for industrial automation equipment, power drive systems, and electrical protection systems. In power electronic modules and electrical equipment, this MOSFET can ensure efficient current control and stable operating performance.

### Summary

STP9NA50FI-VB is an excellent N-type MOSFET suitable for applications such as high voltage power management, motor drive, inverter, frequency converter, battery management system, etc. With its drain-source voltage up to 650V, drain current of 12A and low on-resistance characteristics, it performs well in high power applications. The device not only improves system efficiency and reduces heat loss, but also ensures high reliability under harsh working conditions. Through applications in multiple high-voltage and high-current fields, the STP9NA50FI-VB can meet the power switch needs of various industrial and power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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