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STP3NB60FP-VB Product details
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Product Introduction:
STP3NB60FP-VB is a unipolar N-channel MOSFET in TO220F package, suitable for high voltage applications. With a drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 2A, the device is very suitable for applications requiring high voltage tolerance. Its threshold voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 1700mΩ at a 10V gate drive. STP3NB60FP-VB uses planar technology (Plannar), which has good stability in high voltage applications and is suitable for power conversion, motor drive and other applications requiring high voltage tolerance.
STP3NB60FP-VB is a unipolar N-channel MOSFET in TO220F package, suitable for high voltage applications. With a drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 2A, the device is very suitable for applications requiring high voltage tolerance. Its threshold voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 1700mΩ at a 10V gate drive. STP3NB60FP-VB uses planar technology (Plannar), which has good stability in high voltage applications and is suitable for power conversion, motor drive and other applications requiring high voltage tolerance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON)**:
- At 10V gate voltage: 1700mΩ
- **ID (maximum leakage current)**: 2A
- **Technology**: Plannar technology
- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON)**:
- At 10V gate voltage: 1700mΩ
- **ID (maximum leakage current)**: 2A
- **Technology**: Plannar technology
Domain and module applications：
Applicable fields and modules:
STP3NB60FP-VB is mainly used in high voltage fields, especially in industrial power supplies, AC power control, and motor drive modules. In home appliance control systems, this MOSFET can be used as an efficient power switch, especially in high-voltage power converters, to help improve the efficiency and stability of the system. It can also be used in power tools, industrial motor control systems, etc., to provide efficient power conversion and current regulation. Due to its high voltage resistance, STP3NB60FP-VB also has important application value in power electronic equipment and automation control systems, especially in application scenarios requiring high voltage resistance and low power consumption.
STP3NB60FP-VB is mainly used in high voltage fields, especially in industrial power supplies, AC power control, and motor drive modules. In home appliance control systems, this MOSFET can be used as an efficient power switch, especially in high-voltage power converters, to help improve the efficiency and stability of the system. It can also be used in power tools, industrial motor control systems, etc., to provide efficient power conversion and current regulation. Due to its high voltage resistance, STP3NB60FP-VB also has important application value in power electronic equipment and automation control systems, especially in application scenarios requiring high voltage resistance and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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