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STP36NF06FP-VB Product details

Product introduction:

# 1. Product Introduction

STP36NF06FP-VB is an N-channel MOSFET in TO220F package, designed for low-power and high-efficiency switching applications. This MOSFET is particularly suitable for applications requiring high current load and high efficiency, with a low RDS(ON) value and a high maximum drain voltage (VDS). It uses Trench technology and performs well in various high-current drive and power management applications, providing stable switching performance and excellent thermal management. It is suitable for high-frequency switching, power management, DC motor control, DC-DC converters and many other applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 60V 1.7V 45A 27mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 60V 1.7V 45A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 60V 1.7V 45A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
2. Detailed parameter description

- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain to source voltage (VDS)**: 60V
- **Gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 27mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench technology, with excellent switching performance and low conduction loss

**Typical parameters**:
- **VDS (drain-source voltage)**: 60V, suitable for medium voltage level loads.
- **VGS (gate-source voltage)**: Supports a maximum drive voltage of ±20V, with high switching flexibility.
- **RDS(ON)**: as low as 27mΩ, excellent performance under high current and low power consumption conditions.
- **ID(maximum drain current)**: 45A, meeting high current application requirements.

Domain and module applications:

III. Application fields and module examples

**1. Power management system **
STP36NF06FP-VB can be widely used in power supplies (such as switching power supplies), especially in DC-DC converters, to play its efficient switching characteristics. This MOSFET can reduce switching losses and improve the overall power conversion efficiency. Its low RDS(ON) value makes it have lower heat loss in high current applications, ensuring longer stable operation.

**2. Motor drive **
In the motor control module, STP36NF06FP-VB is suitable for the control of high-power DC motors (such as electric vehicle drive systems, industrial power tools, household appliances, etc.). The high current carrying capacity and low conduction loss of MOSFET help improve drive efficiency and reduce energy loss during motor startup and operation.

**3. DC motor speed control**
STP36NF06FP-VB can also be used in DC motor speed controllers. Its high current carrying capacity and precise switching characteristics enable it to smoothly and accurately control the output of the motor during the speed regulation process, providing stable speed and torque.

**4. Automotive electronic systems**
This MOSFET has been widely used in automotive electronic modules (such as electric vehicle chargers, power systems, and battery management systems). Due to its low on-resistance and high efficiency, it can help reduce power loss, improve energy utilization, and adapt to the needs of high current loads.

**5. High-frequency switching circuits**
The Trench technology used by STP36NF06FP-VB makes it particularly suitable for high-frequency switching circuits, such as those used in RF amplifiers and switching power supplies. It can switch efficiently and quickly, providing high stability and low noise.

In summary, STP36NF06FP-VB is a versatile, high-efficiency N-channel MOSFET, which is widely used in power management, motor control, automotive electronics, high-frequency switching circuits and other fields. It can provide efficient power control and current management, improve equipment performance and reduce power loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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