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STP3481-VB Product details
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1. **Product Introduction**
STP3481-VB is a unipolar P-type MOSFET in SOT23-6 package, designed for low voltage and high efficiency applications. With a maximum drain-source voltage (V_DS) of 30V, this MOSFET is suitable for power management, voltage regulation, and various applications requiring low on-resistance. The on-resistance (R_DS(on)) of STP3481-VB is very low, 54mΩ (V_GS=4.5V) and 49mΩ (V_GS=10V), respectively, ensuring efficient current transmission and low power consumption operation. The maximum drain current (I_D) of this product is -4.8A, which is suitable for high performance and high reliability load driving circuits. STP3481-VB adopts advanced Trench technology, providing excellent switching performance and thermal management capabilities, suitable for use under high current and high frequency operating conditions.
STP3481-VB is a unipolar P-type MOSFET in SOT23-6 package, designed for low voltage and high efficiency applications. With a maximum drain-source voltage (V_DS) of 30V, this MOSFET is suitable for power management, voltage regulation, and various applications requiring low on-resistance. The on-resistance (R_DS(on)) of STP3481-VB is very low, 54mΩ (V_GS=4.5V) and 49mΩ (V_GS=10V), respectively, ensuring efficient current transmission and low power consumption operation. The maximum drain current (I_D) of this product is -4.8A, which is suitable for high performance and high reliability load driving circuits. STP3481-VB adopts advanced Trench technology, providing excellent switching performance and thermal management capabilities, suitable for use under high current and high frequency operating conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
2. **Detailed parameter description**
- **Package type**: SOT23-6
- **Configuration**: Single P-type MOSFET
- **Maximum drain-source voltage (V_DS)**: -30V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- 54mΩ @ V_GS = 4.5V
- 49mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: -4.8A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Power loss (P_d)**: 1.3W (typical)
- **Switching performance**: Suitable for high frequency switching applications, with good thermal management characteristics.
- **Gain characteristics**: Low R_DS(ON) and low switching losses, suitable for power management and load switching applications.
- **Package type**: SOT23-6
- **Configuration**: Single P-type MOSFET
- **Maximum drain-source voltage (V_DS)**: -30V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- 54mΩ @ V_GS = 4.5V
- 49mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: -4.8A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Power loss (P_d)**: 1.3W (typical)
- **Switching performance**: Suitable for high frequency switching applications, with good thermal management characteristics.
- **Gain characteristics**: Low R_DS(ON) and low switching losses, suitable for power management and load switching applications.
Domain and module applications：
3. **Application fields and modules**
The excellent performance of STP3481-VB makes it widely used in many fields, especially in low-voltage, high-efficiency load switches and power management modules. Here are some typical application examples:
- **Power management system**:
In power converters and DC-DC converters, STP3481-VB, as a high-efficiency switching element, can effectively reduce switching losses and improve the overall efficiency of the system. Its low R_DS(ON) value makes it perform well in power management applications, especially in low-voltage power supply systems.
- **Smartphones and portable devices**:
Because this MOSFET adapts to lower voltages and has a small package size (SOT23-6), it has been widely used in portable products such as smartphones and battery-powered devices. STP3481-VB can be used for battery management, charger circuits, and various power switching applications.
- **Load Switch and Protection Circuit**:
In battery-driven devices, the STP3481-VB is used as a load switch to efficiently control the power supply and protect the battery from overcurrent damage. Its low on-resistance reduces the power consumption of the circuit and improves the reliability of the overall system.
- **LED Driver**:
In LED driver power, the STP3481-VB can be used as a load switch to provide fast and efficient switching performance. In these applications, the low R_DS(ON) value of the MOSFET ensures low power consumption and provides high current handling capabilities to drive multiple LED modules.
- **Automotive Electronics**:
In automotive electronic systems, the STP3481-VB can be used to control motors, sensors, and battery management systems. Due to its efficient conduction performance and high temperature resistance, this MOSFET is suitable for high-frequency switching and voltage regulation control applications in automotive environments.
- **High-efficiency battery charger**:
This MOSFET can also be used in high-efficiency battery chargers to provide reliable current control and optimize energy transfer during charging. Low on-resistance reduces power loss when charging the battery, which helps improve charging efficiency and reduce heat accumulation.
In summary, as a low-voltage, high-efficiency P-type MOSFET, STP3481-VB is suitable for electronic circuits that require high-frequency switching, high efficiency and low power consumption, especially in portable devices, automotive electronics, LED driving and power management.
The excellent performance of STP3481-VB makes it widely used in many fields, especially in low-voltage, high-efficiency load switches and power management modules. Here are some typical application examples:
- **Power management system**:
In power converters and DC-DC converters, STP3481-VB, as a high-efficiency switching element, can effectively reduce switching losses and improve the overall efficiency of the system. Its low R_DS(ON) value makes it perform well in power management applications, especially in low-voltage power supply systems.
- **Smartphones and portable devices**:
Because this MOSFET adapts to lower voltages and has a small package size (SOT23-6), it has been widely used in portable products such as smartphones and battery-powered devices. STP3481-VB can be used for battery management, charger circuits, and various power switching applications.
- **Load Switch and Protection Circuit**:
In battery-driven devices, the STP3481-VB is used as a load switch to efficiently control the power supply and protect the battery from overcurrent damage. Its low on-resistance reduces the power consumption of the circuit and improves the reliability of the overall system.
- **LED Driver**:
In LED driver power, the STP3481-VB can be used as a load switch to provide fast and efficient switching performance. In these applications, the low R_DS(ON) value of the MOSFET ensures low power consumption and provides high current handling capabilities to drive multiple LED modules.
- **Automotive Electronics**:
In automotive electronic systems, the STP3481-VB can be used to control motors, sensors, and battery management systems. Due to its efficient conduction performance and high temperature resistance, this MOSFET is suitable for high-frequency switching and voltage regulation control applications in automotive environments.
- **High-efficiency battery charger**:
This MOSFET can also be used in high-efficiency battery chargers to provide reliable current control and optimize energy transfer during charging. Low on-resistance reduces power loss when charging the battery, which helps improve charging efficiency and reduce heat accumulation.
In summary, as a low-voltage, high-efficiency P-type MOSFET, STP3481-VB is suitable for electronic circuits that require high-frequency switching, high efficiency and low power consumption, especially in portable devices, automotive electronics, LED driving and power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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