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STP22NM50FP-VB Product details
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STP22NM50FP-VB MOSFET Product Introduction
The STP22NM50FP-VB is a high-performance single N-channel MOSFET in a TO220F package, designed for high-voltage power management and power control systems. The maximum drain-source voltage (VDS) of this MOSFET is 650V, and it can handle a drain current (ID) of up to 20A. By adopting SJ_Multi-EPI technology, the STP22NM50FP-VB provides a lower on-resistance (RDS(ON)) of 160mΩ (VGS = 10V), which helps to reduce power losses under high voltage and high current conditions, thereby improving system efficiency and stability. The gate-source voltage (VGS) tolerance is ±30V, which makes it perform well in various high-voltage applications, and the gate threshold voltage (Vth) is 3.5V, which is suitable for standard drive voltage applications.
This MOSFET is mainly used in power electronics, switching power supplies, industrial control and high-voltage power management systems. It is particularly suitable for applications that require high efficiency and low power loss, ensuring high-frequency switching and fast response performance.
The STP22NM50FP-VB is a high-performance single N-channel MOSFET in a TO220F package, designed for high-voltage power management and power control systems. The maximum drain-source voltage (VDS) of this MOSFET is 650V, and it can handle a drain current (ID) of up to 20A. By adopting SJ_Multi-EPI technology, the STP22NM50FP-VB provides a lower on-resistance (RDS(ON)) of 160mΩ (VGS = 10V), which helps to reduce power losses under high voltage and high current conditions, thereby improving system efficiency and stability. The gate-source voltage (VGS) tolerance is ±30V, which makes it perform well in various high-voltage applications, and the gate threshold voltage (Vth) is 3.5V, which is suitable for standard drive voltage applications.
This MOSFET is mainly used in power electronics, switching power supplies, industrial control and high-voltage power management systems. It is particularly suitable for applications that require high efficiency and low power loss, ensuring high-frequency switching and fast response performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
STP22NM50FP-VB MOSFET Detailed parameter description
- **Model**: STP22NM50FP-VB
- **Package type**: TO220F
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Maximum junction temperature**: 150°C
- **Switching characteristics**: Low conduction loss, suitable for high-frequency switching applications
- **Technology type**: SJ_Multi-EPI
- **Power loss**: Depends on the application's operating environment and current requirements
- **Model**: STP22NM50FP-VB
- **Package type**: TO220F
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Maximum junction temperature**: 150°C
- **Switching characteristics**: Low conduction loss, suitable for high-frequency switching applications
- **Technology type**: SJ_Multi-EPI
- **Power loss**: Depends on the application's operating environment and current requirements
Domain and module applications：
Application fields and module examples of STP22NM50FP-VB MOSFET
1. **Power management and power conversion**
STP22NM50FP-VB is suitable for high-voltage power management systems, especially in AC-DC and DC-DC power converters. It can effectively reduce switching loss and transmission loss, provide stable voltage and current output, and perform well in industrial power supply, switching power supply (SMPS), UPS (uninterruptible power supply) systems, especially in high-power power modules and battery management systems.
2. **Industrial motor drive and control**
In industrial automation and motor control systems, STP22NM50FP-VB can handle high current loads and provide efficient power conversion. It is suitable for variable frequency drives (VFDs), servo drives and motor controllers, and ensures smooth and efficient operation of drive motors through its superior switching performance and low on-resistance.
3. **Automotive electronics and electric vehicles (EV)**
In electric vehicles (EV) and hybrid electric vehicles (HEV), STP22NM50FP-VB can be used in battery management systems (BMS), motor control, power conversion and inverters. The MOSFET provides efficient current conversion and can withstand high battery voltage fluctuations, ensuring the stability and energy efficiency of automotive electronic systems.
4. **Energy storage and solar inverters**
In solar photovoltaic power generation systems, STP22NM50FP-VB can be used as a switching element in the inverter to convert direct current (DC) into alternating current (AC). Its high VDS and low on-resistance characteristics make it very suitable for solar inverters, battery energy storage systems and other fields, which can improve energy conversion efficiency and reduce losses.
5. **Consumer electronics**
STP22NM50FP-VB is also used in consumer electronics, such as LED driver power supplies, smart home systems and high-efficiency battery chargers. In these systems, the low on-resistance of the MOSFET helps improve the system's power efficiency and extend the life of the equipment.
1. **Power management and power conversion**
STP22NM50FP-VB is suitable for high-voltage power management systems, especially in AC-DC and DC-DC power converters. It can effectively reduce switching loss and transmission loss, provide stable voltage and current output, and perform well in industrial power supply, switching power supply (SMPS), UPS (uninterruptible power supply) systems, especially in high-power power modules and battery management systems.
2. **Industrial motor drive and control**
In industrial automation and motor control systems, STP22NM50FP-VB can handle high current loads and provide efficient power conversion. It is suitable for variable frequency drives (VFDs), servo drives and motor controllers, and ensures smooth and efficient operation of drive motors through its superior switching performance and low on-resistance.
3. **Automotive electronics and electric vehicles (EV)**
In electric vehicles (EV) and hybrid electric vehicles (HEV), STP22NM50FP-VB can be used in battery management systems (BMS), motor control, power conversion and inverters. The MOSFET provides efficient current conversion and can withstand high battery voltage fluctuations, ensuring the stability and energy efficiency of automotive electronic systems.
4. **Energy storage and solar inverters**
In solar photovoltaic power generation systems, STP22NM50FP-VB can be used as a switching element in the inverter to convert direct current (DC) into alternating current (AC). Its high VDS and low on-resistance characteristics make it very suitable for solar inverters, battery energy storage systems and other fields, which can improve energy conversion efficiency and reduce losses.
5. **Consumer electronics**
STP22NM50FP-VB is also used in consumer electronics, such as LED driver power supplies, smart home systems and high-efficiency battery chargers. In these systems, the low on-resistance of the MOSFET helps improve the system's power efficiency and extend the life of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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