Product introduction：
Product Introduction: STP110N55F6-VB MOSFET
STP110N55F6-VB is a high-performance N-channel power MOSFET in TO220 package, designed for high current, low on-resistance and low voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, the maximum gate-source voltage (VGS) is ±20V, and it has a very low on-resistance of 9mΩ (@VGS=4.5V) and 3mΩ (@VGS=10V), respectively, which makes it have extremely low power loss when transmitting large currents, ensuring higher efficiency. Its maximum drain current (ID) can reach 210A, which is suitable for high-power switching and high-efficiency power management applications. The use of Trench technology enables the STP110N55F6-VB MOSFET to have excellent switching performance and thermal stability in high current and high frequency applications.
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
60V |
|
3V |
210A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
60V |
|
3V |
210A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
60V |
|
3V |
210A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description:
- **Package**: TO220
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 9mΩ @VGS=4.5V
- 3mΩ @VGS=10V
- **Maximum drain current (ID)**: 210A
- **Maximum power dissipation (Pd)**: 270W (variable according to heat dissipation conditions)
- **Operating temperature range (Tj)**: -55°C to 150°C
- **Technology**: Trench (deep trench technology)
- **Maximum junction temperature**: 150°C
Domain and module applications：
Application fields and module examples:
1. **High-efficiency power management**:
STP110N55F6-VB is widely used in high-efficiency power management systems such as DC-DC converters, inverters, battery management systems (BMS), etc. due to its ultra-low on-resistance and high drain current carrying capacity. It can reduce power consumption and improve system efficiency during power conversion, and is particularly suitable for applications in high-power power supply and smart grids.
2. **Power tools and motor drives**:
In power tools, motor controllers, and robot drive systems, STP110N55F6-VB MOSFET can be used as a high-efficiency switch, providing high current support and low power loss to ensure stable operation of the motor. Its high drain current carrying capacity and fast switching performance make it very suitable for high-power drive applications such as electric bicycles, electric vehicle drive systems, etc.
3. **Automotive electronics**:
STP110N55F6-VB can also be widely used in automotive electronic systems, especially in battery management, power conversion modules for electric vehicles (EV) and hybrid electric vehicles (HEV). Its high current carrying capacity and low on-resistance make it an ideal choice for battery management systems, on-board chargers, and high-voltage battery protection systems.
4. **Industrial automation and switching power supplies**:
This MOSFET is also used in industrial automation systems, robots, and PLC control systems, especially in situations where high current switching is required. Its low power consumption characteristics and efficient switching capabilities can provide stable and efficient power management in industrial power equipment, ensuring that production equipment runs smoothly under high load conditions.
5. **Power distribution and UPS systems**:
STP110N55F6-VB also plays an important role in uninterruptible power supply (UPS) systems, especially providing seamless switching during power failures. Due to its superior current transfer capability and low power loss, it can effectively provide power protection and backup, especially for critical applications requiring high reliability and high efficiency.
Through these applications, the STP110N55F6-VB MOSFET can provide efficient and reliable switching solutions for various high-power electrical systems, especially for power conversion, motor drive and various high-efficiency power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
