Product introduction:
Product Introduction: STP10NK50Z-VB MOSFET
STP10NK50Z-VB is an N-channel power MOSFET in TO220 package, designed for high voltage applications. Its maximum drain-source voltage (VDS) is 650V, suitable for applications requiring high voltage resistance and large current drive. The maximum gate-source voltage (VGS) of this MOSFET is ±30V, with a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 500mΩ @VGS=10V, and a maximum drain current (ID) of 9A. Using SJ_Multi-EPI technology, the STP10NK50Z-VB exhibits excellent durability and high performance in high temperature environments. This device is widely used in power management, switching power supplies, motor drives, and automotive electronics.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
9A |
|
|
500mΩ |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
9A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
9A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description:
- **Package**: TO220
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @VGS=10V
- **Maximum drain current (ID)**: 9A
- **Maximum power dissipation (Pd)**: 150W (depending on heat dissipation)
- **Operating temperature range (Tj)**: -55°C to 150°C
- **Technology**: SJ_Multi-EPI (polysilicon technology)
- **Maximum junction temperature**: 150°C
Domain and module applications:
Applications and module examples:
1. **Switching Power Supplies and Power Converters**:
The high voltage capability and low on-resistance of the STP10NK50Z-VB make it ideal for use in high-efficiency switching power supplies (SMPS), especially in AC-DC and DC-DC converters. It can provide a stable power supply under high load conditions and is suitable for industrial equipment, consumer electronics, and computer power systems.
2. **Motor Drive Systems**:
Due to its ability to withstand higher voltages and provide larger currents, the STP10NK50Z-VB is ideal for driving electric motors such as stepper motors, DC motors, and brushless motors. It can be used in various power tools, electric vehicles (EVs), and automation control systems to ensure smooth operation of the motor and reduce energy loss.
3. **Automotive Electronics**:
In the automotive field, the STP10NK50Z-VB is widely used in automotive battery management systems (BMS), electric vehicle chargers, and power distribution modules. Its high withstand voltage performance enables it to cope with transient high voltage situations common in automotive electrical systems, ensuring system stability and safety.
4. **Power amplifiers and audio equipment**:
This MOSFET can also be used in high-power audio amplifiers to provide a stable output current, suitable for audio power amplification applications that require high current and high voltage. By providing low on-resistance, the STP10NK50Z-VB helps improve the efficiency of power amplification, reduce power consumption and improve overall sound quality.
5. **High-voltage power supply and UPS (uninterruptible power supply) systems**:
Due to its high withstand voltage characteristics, the STP10NK50Z-VB has a wide range of applications in uninterruptible power supply (UPS) systems, especially where power switching is required at high voltage. It can provide reliable backup power when power is interrupted, ensuring the continuous operation of critical equipment and systems.
Through these applications, the STP10NK50Z-VB MOSFET provides efficient and reliable power management and driving capabilities, meeting the requirements of modern power electronics products for high voltage, low power consumption and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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