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STN7NF10-VB Product details
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STN7NF10-VB is a unipolar N-channel MOSFET in a SOT223 package, using advanced Trench technology. This MOSFET has a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 6.4A. At the same time, its VGS gate voltage can reach ±20V, which is suitable for medium and high voltage drive and switching applications. This product has a low RDS(ON) (36mΩ @ VGS = 10V), which makes it perform well in applications such as high-efficiency power management and electric vehicles.
**STN7NF10-VB MOSFET
STN7NF10-VB is a unipolar N-channel MOSFET in a SOT223 package, using advanced Trench technology. This MOSFET has a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 6.4A. At the same time, its VGS gate voltage can reach ±20V, which is suitable for medium and high voltage drive and switching applications. This product has a low RDS(ON) (36mΩ @ VGS = 10V), which makes it perform well in applications such as high-efficiency power management and electric vehicles.
**STN7NF10-VB MOSFET
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 6.4A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 6.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 6.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
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- **Package type**: SOT223
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 36mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 6.4A
- **Technology**: Trench technology
- **Power loss**: Excellent thermal performance and low RDS(ON) provide low power loss in high-frequency and high-efficiency applications.
**STN7NF10-VB MOSFET
- **Package type**: SOT223
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 36mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 6.4A
- **Technology**: Trench technology
- **Power loss**: Excellent thermal performance and low RDS(ON) provide low power loss in high-frequency and high-efficiency applications.
**STN7NF10-VB MOSFET
Domain and module applications：
**
1. **Power Management Systems**
The STN7NF10-VB is suitable for high-efficiency power switching modules in switching power supplies, DC-DC converters, and battery management systems due to its low RDS(ON) value and high leakage current handling capability. Its low on-resistance helps reduce power losses and improve system efficiency, especially under high current loads.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
In the battery management modules (BMS) and electric drive systems of EVs and HEVs, the STN7NF10-VB acts as a power switch to effectively control the drive current of the motor and the charging and discharging process of the battery. Its high withstand voltage characteristics make it widely used in high-voltage battery management and motor drives.
3. **Industrial Automation and Robotics**
Due to its withstand voltage capability and switching speed, this MOSFET is suitable for power conversion applications in robot control circuits and industrial automation systems. For example, in transmission control and variable frequency drive systems, it can be used as a main switch to handle large currents and maintain high efficiency.
4. **Communications and Data Center**
STN7NF10-VB is also suitable for high-efficiency data communication equipment, such as server power supplies and battery-powered units (UPS). It can provide stable power supply in the power conversion system of data center equipment, ensuring power management and efficiency optimization under high load conditions.
5. **LED Driver**
In the design of LED lighting driver power, STN7NF10-VB has low on-resistance and high reliability, suitable for high-efficiency DC-DC converters, ensuring stable current supply and long-life operation of LED lamps.
**Summary**
The low RDS(ON), high current capability and high voltage resistance of STN7NF10-VB MOSFET make it very suitable for a variety of high-efficiency power conversion systems and high-power applications, especially in power management, electric vehicles, industrial automation and communication equipment. Its excellent thermal performance and low loss characteristics also make it outstanding in high-frequency and high-efficiency applications.
1. **Power Management Systems**
The STN7NF10-VB is suitable for high-efficiency power switching modules in switching power supplies, DC-DC converters, and battery management systems due to its low RDS(ON) value and high leakage current handling capability. Its low on-resistance helps reduce power losses and improve system efficiency, especially under high current loads.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
In the battery management modules (BMS) and electric drive systems of EVs and HEVs, the STN7NF10-VB acts as a power switch to effectively control the drive current of the motor and the charging and discharging process of the battery. Its high withstand voltage characteristics make it widely used in high-voltage battery management and motor drives.
3. **Industrial Automation and Robotics**
Due to its withstand voltage capability and switching speed, this MOSFET is suitable for power conversion applications in robot control circuits and industrial automation systems. For example, in transmission control and variable frequency drive systems, it can be used as a main switch to handle large currents and maintain high efficiency.
4. **Communications and Data Center**
STN7NF10-VB is also suitable for high-efficiency data communication equipment, such as server power supplies and battery-powered units (UPS). It can provide stable power supply in the power conversion system of data center equipment, ensuring power management and efficiency optimization under high load conditions.
5. **LED Driver**
In the design of LED lighting driver power, STN7NF10-VB has low on-resistance and high reliability, suitable for high-efficiency DC-DC converters, ensuring stable current supply and long-life operation of LED lamps.
**Summary**
The low RDS(ON), high current capability and high voltage resistance of STN7NF10-VB MOSFET make it very suitable for a variety of high-efficiency power conversion systems and high-power applications, especially in power management, electric vehicles, industrial automation and communication equipment. Its excellent thermal performance and low loss characteristics also make it outstanding in high-frequency and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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