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STN410D-VB Product details
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STN410D-VB MOSFET Product Introduction
The STN410D-VB is a single N-channel power MOSFET in a TO252 package designed for high-power applications. This MOSFET uses advanced Trench technology, has extremely low on-resistance and high drain current carrying capacity, and is suitable for various power management and high-efficiency switch control applications. The maximum drain-source voltage (VDS) of the STN410D-VB is 30V, and the maximum drain current (ID) is 70A, which can operate stably in high current and high frequency environments. Its low on-resistance (RDS(ON)) enables it to perform well in power systems with high efficiency requirements, and is particularly suitable for power management, DC-DC converters, and load switching applications. The STN410D-VB provides the system with lower power consumption and higher reliability in high-efficiency power supply designs, and is an ideal choice for efficient energy transmission and control systems.
The STN410D-VB is a single N-channel power MOSFET in a TO252 package designed for high-power applications. This MOSFET uses advanced Trench technology, has extremely low on-resistance and high drain current carrying capacity, and is suitable for various power management and high-efficiency switch control applications. The maximum drain-source voltage (VDS) of the STN410D-VB is 30V, and the maximum drain current (ID) is 70A, which can operate stably in high current and high frequency environments. Its low on-resistance (RDS(ON)) enables it to perform well in power systems with high efficiency requirements, and is particularly suitable for power management, DC-DC converters, and load switching applications. The STN410D-VB provides the system with lower power consumption and higher reliability in high-efficiency power supply designs, and is an ideal choice for efficient energy transmission and control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
STN410D-VB MOSFET Detailed parameter description
- **Model**: STN410D-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS** (drain-source voltage): 30V
- **VGS** (gate-source voltage): ±20V
- **Vth** (gate threshold voltage): 1.7V
- **RDS(ON)** (on-resistance):
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **ID** (maximum drain current): 70A
- **Technology**: Trench technology
- **Model**: STN410D-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS** (drain-source voltage): 30V
- **VGS** (gate-source voltage): ±20V
- **Vth** (gate threshold voltage): 1.7V
- **RDS(ON)** (on-resistance):
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **ID** (maximum drain current): 70A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples of STN410D-VB MOSFET
1. **Power management system**
STN410D-VB MOSFET is widely used in power management systems, especially in high-power power converters and power modules. Due to its extremely low on-resistance (RDS(ON)), the MOSFET can achieve efficient switching operation under high current (maximum 70A) and low voltage environment, thereby effectively reducing power loss and improving power efficiency. It is suitable for DC-DC converters, AC-DC converters and various voltage regulation power supplies.
2. **Battery management system (BMS)**
In the battery management system, STN410D-VB can be used as a battery charge and discharge control switch to help regulate the charge and discharge state of the battery. Its high current carrying capacity (70A) makes it suitable for high-power battery management applications, especially in power tools, electric vehicles (EVs) and high-power battery systems. By controlling the charge and discharge current, the MOSFET can protect the battery from overload and overcharge damage, while optimizing the efficiency and life of the battery.
3. **Load switch and protection circuit**
STN410D-VB is an ideal load switch for switch control and protection circuits of high current loads. In this application, the MOSFET can handle a maximum current of 70A and effectively cut off the current to protect the downstream circuit from damage. It is suitable for use in load switch modules in home appliances, industrial equipment and automotive electronics to help improve the stability and reliability of the system.
4. **Motor drive system**
The high current carrying capacity of STN410D-VB makes it widely used in motor drive systems, especially in brushless DC motor (BLDC) and stepper motor drive systems. In these systems, MOSFET controls the drive current of the motor and reduces the power loss in the system by providing stable switching operation. Its low RDS(ON) can significantly improve the efficiency of motor drive and is suitable for various industrial automation, power tools and small household appliances.
5. **Automotive electronic systems**
In automotive electronic systems, the STN410D-VB can be used in applications such as electric drive systems, on-board battery management, and load control. Its 30V drain-source voltage and 70A maximum current carrying capacity make it ideal for battery management, energy conversion, and load control modules. This MOSFET is able to provide efficient switching performance and low power consumption, and is particularly suitable for efficient battery management and power systems in electric vehicles (EVs).
6. **Efficient lighting systems**
The STN410D-VB MOSFET can also play an important role in efficient lighting systems, especially in LED drive circuits. Due to its low on-resistance and high current carrying capacity, this MOSFET can effectively control the LED drive current, reduce energy loss, and improve the overall efficiency of the LED lighting system. It is suitable for commercial and household lighting systems that require efficient control and long life.
1. **Power management system**
STN410D-VB MOSFET is widely used in power management systems, especially in high-power power converters and power modules. Due to its extremely low on-resistance (RDS(ON)), the MOSFET can achieve efficient switching operation under high current (maximum 70A) and low voltage environment, thereby effectively reducing power loss and improving power efficiency. It is suitable for DC-DC converters, AC-DC converters and various voltage regulation power supplies.
2. **Battery management system (BMS)**
In the battery management system, STN410D-VB can be used as a battery charge and discharge control switch to help regulate the charge and discharge state of the battery. Its high current carrying capacity (70A) makes it suitable for high-power battery management applications, especially in power tools, electric vehicles (EVs) and high-power battery systems. By controlling the charge and discharge current, the MOSFET can protect the battery from overload and overcharge damage, while optimizing the efficiency and life of the battery.
3. **Load switch and protection circuit**
STN410D-VB is an ideal load switch for switch control and protection circuits of high current loads. In this application, the MOSFET can handle a maximum current of 70A and effectively cut off the current to protect the downstream circuit from damage. It is suitable for use in load switch modules in home appliances, industrial equipment and automotive electronics to help improve the stability and reliability of the system.
4. **Motor drive system**
The high current carrying capacity of STN410D-VB makes it widely used in motor drive systems, especially in brushless DC motor (BLDC) and stepper motor drive systems. In these systems, MOSFET controls the drive current of the motor and reduces the power loss in the system by providing stable switching operation. Its low RDS(ON) can significantly improve the efficiency of motor drive and is suitable for various industrial automation, power tools and small household appliances.
5. **Automotive electronic systems**
In automotive electronic systems, the STN410D-VB can be used in applications such as electric drive systems, on-board battery management, and load control. Its 30V drain-source voltage and 70A maximum current carrying capacity make it ideal for battery management, energy conversion, and load control modules. This MOSFET is able to provide efficient switching performance and low power consumption, and is particularly suitable for efficient battery management and power systems in electric vehicles (EVs).
6. **Efficient lighting systems**
The STN410D-VB MOSFET can also play an important role in efficient lighting systems, especially in LED drive circuits. Due to its low on-resistance and high current carrying capacity, this MOSFET can effectively control the LED drive current, reduce energy loss, and improve the overall efficiency of the LED lighting system. It is suitable for commercial and household lighting systems that require efficient control and long life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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