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STN3NE06-TR-VB Product details

Product introduction:

STN3NE06-TR-VB MOSFET Product Introduction

**STN3NE06-TR-VB** is a **single N-channel MOSFET** in **SOT223** package, designed for **medium voltage and current applications**, with a maximum **drain-source voltage (V_DS)** of **60V**, suitable for medium and low power power management, load switching and power control circuits. This MOSFET adopts **Trench technology**, with **low R_DS(on)**, with a maximum value of **85mΩ** (V_GS = 4.5V) and **76mΩ** (V_GS = 10V), while ensuring efficient conduction, reducing conduction losses and heat generated. Its maximum **drain current (I_D)** is **4.5A**, which can carry higher current loads and is suitable for applications that require good power management and efficient current transmission.

The STN3NE06-TR-VB MOSFET has a wide range of applicability and can meet the needs of a variety of application scenarios, such as power management systems, load switch circuits, battery management, etc. Its high efficiency and reliability make it an ideal choice for medium voltage applications such as small power devices, communication equipment and smart home systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT223 Single-N 60V 1.7V 4.5A 76mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT223 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT223 Single-N 60V 1.7V 4.5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT223 Single-N 60V 1.7V 4.5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT223 Single-N
STN3NE06-TR-VB MOSFET Detailed parameter description

| **Parameter** | **Value** |
|-------------------|-----------------------|
| **Model** | STN3NE06-TR-VB |
| **Package type** | SOT223 |
| **Channel configuration** | Single N channel|
| **V_DS (drain-source voltage)** | 60V |
| **V_GS (gate-source voltage)** | ±20V |
| **V_th (threshold voltage)** | 1.7V |
| **R_DS(on)** | 85mΩ (V_GS = 4.5V) |
| **R_DS(on)** | 76mΩ (V_GS = 10V) |
| **I_D (drain current)** | 4.5A |
| **Technology type** | Trench Technology |

Domain and module applications:

STN3NE06-TR-VB MOSFET Applications and Module Examples

1. **Power Management System**:
**STN3NE06-TR-VB** is suitable for **DC-DC converters**, especially **Buck** or **Boost** power conversion circuits. Its low **R_DS(on)** and high current carrying capacity enable it to reduce losses and improve conversion efficiency during power conversion. It can be used in **battery-powered devices**, **vehicle power** and other efficient power management systems to ensure efficient use of energy.

2. **Load Switch and Power Control**:
This MOSFET can be widely used in **load switching circuits** and **power control circuits**. For example, it can be used as a switching element in a **switching power supply** to provide efficient load switching functions. **STN3NE06-TR-VB** can also be used in **overcurrent protection circuits** to help control current and prevent system damage due to overload or excessive current.

3. **Battery Management and Charging System**:
**STN3NE06-TR-VB** is suitable for **Battery Management System (BMS)**, which is used to control the charging and discharging process of the battery. In the energy management of the battery pack, it can provide precise current control and effectively extend the battery life. In addition, it can also be used in **Battery Charger** to achieve efficient current transmission and temperature control protection.

4. **Automotive Electronics and Electric Transportation**:
In **Electric Vehicles (EV)** and **Electric Transportation** (such as electric bicycles, electric scooters), STN3NE06-TR-VB can be used in modules such as battery management system, motor drive control and power conversion. Due to its low **R_DS(on)**, this MOSFET can reduce energy losses in battery management and motor drive, and improve the operating efficiency of the entire system.

5. **Communication equipment and signal processing**:
In **communication equipment** and **RF systems**, **STN3NE06-TR-VB** can be used as an efficient switching element to provide a low-loss current path during signal transmission and power amplification. Its low **R_DS(on)** and high current carrying capacity make it suitable for **small communication equipment** and **base station power management** systems.

6. **Smart home and consumer electronics**:
**STN3NE06-TR-VB** is suitable as a core element for **power switching** and **load control** in **smart home systems**. For example, it can be applied to devices such as smart lighting systems, electric curtains, and smart air conditioners. The MOSFET's efficient switching performance and low power consumption make it an excellent performer in **smart homes**.

7. **Industrial control and automation systems**:
In the field of industrial automation, STN3NE06-TR-VB can be used as a **switching element** or part of a **motor drive system** to control the start, stop and speed regulation of the machine. Its high current carrying capacity and fast switching capability make it an excellent performer in the power control of various industrial equipment.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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