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STN3NE06L-TR-VB Product details

Product introduction:

STN3NE06L-TR-VB MOSFET Product Introduction

STN3NE06L-TR-VB is a high-performance N-Channel MOSFET in SOT223 package, designed for medium and low voltage, high current applications. Its maximum drain-source voltage (VDS) is 60V, and the maximum drain current (ID) can reach 4.5A. When the gate-source voltage (VGS) of STN3NE06L-TR-VB is 10V, the on-resistance (RDS(ON)) is 76mΩ, and at a gate-source voltage of 4.5V, the RDS(ON) is 85mΩ. Its threshold voltage (Vth) is 1.7V, which meets the needs of different driving voltages. This MOSFET adopts advanced Trench technology, which effectively reduces the on-resistance and improves the switching performance. It is widely used in power management, load switching, DC-DC conversion and other fields, especially in systems requiring low power consumption and high efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT223 Single-N 60V 1.7V 4.5A 76mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT223 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT223 Single-N 60V 1.7V 4.5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT223 Single-N 60V 1.7V 4.5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT223 Single-N
STN3NE06L-TR-VB MOSFET Detailed parameter description

- **Package type**: SOT223
- **Configuration**: Single N-Channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON) (on-resistance)**:
- 85mΩ@VGS=4.5V
- 76mΩ@VGS=10V
- **ID (drain current)**: 4.5A
- **Technology**: Trench (trench technology)

Domain and module applications:

Applications and modules

1. **Power management system**
STN3NE06L-TR-VB is an ideal choice for power management systems, especially for applications such as DC-DC converters, power adapters and regulated power supplies. Due to its low on-resistance and high current carrying capacity, it can significantly improve power conversion efficiency and reduce energy loss, and is suitable for power supply designs that require high performance and low heat output. In areas such as portable electronic devices, TVs, and computer power supplies, it can significantly improve system performance.

2. **Load switch applications**
In load switch applications, STN3NE06L-TR-VB can be used to efficiently control the flow of current, especially in low voltage and low power consumption environments. Due to its low RDS(ON) and high current handling capability, it can effectively reduce power loss and extend battery life in battery-powered systems. It is suitable for mobile devices, portable battery management systems, wireless communication equipment and other fields.

3. **LED drive circuit**
In the LED drive circuit, STN3NE06L-TR-VB can be used as a power switch. Its low on-resistance can effectively reduce power loss, so that the efficiency and brightness of the LED lighting system are optimized. This MOSFET is particularly suitable for LED lighting systems that require efficient current drive, including applications such as TV backlight, indoor and outdoor lighting, and automotive lighting, ensuring long-term stable operation and improving energy efficiency.

4. **Battery Management System (BMS)**
STN3NE06L-TR-VB is widely used in battery management systems (BMS), especially in power tools, electric vehicles (EVs), and portable battery devices. Its high current carrying capacity and low on-resistance make it a key component for battery management, charging protection, and load control. It can effectively control the battery's charge and discharge process under high load, prevent overcharge and overdischarge, and ensure the battery works safely.

5. **Industrial Control and Automation**
STN3NE06L-TR-VB is also suitable for industrial control systems, such as automation equipment, robotic systems, and production line electrical control. As an efficient switching element in these systems, it can provide precise current control to ensure stable operation of the equipment under high load and high-frequency switching conditions. Due to its high efficiency and durability, it can meet the needs of long-term high-intensity operation in industrial environments.

6. **Automotive Electronic Systems**
In automotive electronic systems, STN3NE06L-TR-VB is suitable for battery management, electric drive systems, and on-board power conversion systems. Its low on-resistance and high current capability make it an important switching element in on-board power conversion and battery protection circuits, which can effectively improve the battery management efficiency in electric vehicles (EVs) and hybrid electric vehicles (HEVs), extend battery life, and improve the energy efficiency of the overall system.

7. **Audio amplifier and RF applications**
Due to its fast switching performance and low power consumption, the STN3NE06L-TR-VB is also suitable for audio amplifier and radio frequency (RF) applications. It can provide stable power output in audio amplifier circuits, reduce heat generation, and ensure that the signal quality is not disturbed. In high-performance audio systems and RF amplifiers, this MOSFET can effectively control the current to improve the efficiency and sound quality of the equipment.

The high efficiency performance and wide application areas of the STN3NE06L-TR-VB make it an ideal choice for multiple industries such as power management, battery protection, LED driving, industrial control and automotive electronics. Its low on-resistance, high current capability and high-efficiency switching performance can ensure the efficiency and stability of the system and improve the overall performance and reliability of the product.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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