STN2NE06-VB Product details
Product introduction:
**STN2NE06-VB** is a single N-Channel MOSFET in a **SOT223** package, designed for high-efficiency current switching applications in the medium voltage range. Its maximum drain-source voltage (V_DS) is 60V, suitable for applications requiring higher voltage control and switching. The MOSFET has a gate-source voltage (V_GS) range of ±20V and a threshold voltage (V_th) of 1.7V, ensuring its high-efficiency and low-power switching characteristics. At V_GS of 10V, the on-resistance (R_DS(on)) is only 76mΩ and the maximum drain current (I_D) is 4.5A, suitable for medium-power power management and load switching applications.
Using **Trench technology**, the STN2NE06-VB has low on-resistance and good switching performance, making it perform well in low-power applications. Its low R_DS(on) value can effectively reduce power loss and heat generation, and is suitable for fields such as efficient power conversion, battery management and load control, and can provide stable and efficient current management for various electronic devices.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
| **Parameter** | **Value** |
|---------------------|-----------------------|
| **Model** | STN2NE06-VB |
| **Package** | SOT223 |
| **Configuration** | Single-N-Channel|
| **V_DS (drain-source voltage)** | 60V |
| **V_GS (gate-source voltage)** | ±20V |
| **V_th (threshold voltage)** | 1.7V |
| **R_DS(on)** | 85mΩ (V_GS=4.5V) |
| **R_DS(on)** | 76mΩ (V_GS=10V) |
| **I_D (maximum leakage current)** | 4.5A |
| **Technology** | Trench |
Domain and module applications:
3. **Load Switch and Power Control**:
STN2NE06-VB can be used as a load switch, especially for low-power load systems that require frequent switching control. Its fast switching response and low on-resistance ensure low power loss, suitable for consumer electronics, home appliances and other fields. For example, in home smart lamps or automation equipment, STN2NE06-VB can be used for load switching to ensure high efficiency and stability of switch control.
4. **Low-power Motor Drive**:
STN2NE06-VB is suitable for low-power motor drive systems. It can efficiently switch current and control the start and stop process of low-power motors. For example, in low-power power tools, home appliances (such as fans, vacuum cleaners) or electric toys, STN2NE06-VB can be used to accurately control the current flow of the motor, provide fast motor response, and reduce energy loss.
5. **Smart Home and IoT Devices**:
In smart home and IoT devices, STN2NE06-VB can be used for power management and switch control of low-power devices. These devices usually require precise current regulation and efficient power conversion, and the low R_DS(on) of STN2NE06-VB gives it an important advantage in these applications. For example, in smart sockets, smart lighting and environmental monitoring devices, STN2NE06-VB can effectively control power switches to ensure efficient and stable operation of the devices.
In summary, STN2NE06-VB is an efficient single N-Channel MOSFET that is widely used in battery management, DC-DC converters, load switches, motor drives, smart home and IoT devices. Its low on-resistance, high current carrying capacity and efficient switching performance make it an ideal choice for low-power, high-efficiency power management systems.
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