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STN1N20-VB Product details
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STN1N20-VB MOSFET Product Introduction
STN1N20-VB is a single N-channel MOSFET in SOT223 package, suitable for medium and high voltage applications, with a drain-source voltage (VDS) of 200V and a maximum drain current (ID) of 1A. This MOSFET adopts Trench technology, with high operating stability and low power consumption. Its threshold voltage (Vth) is 3V, and it has a high conduction capability (RDS(ON) of 1200mΩ) at a gate-source voltage (VGS) of 10V. STN1N20-VB is suitable for various power switches, regulation circuits and signal processing applications, especially those with low current and medium voltage requirements. Its low RDS(ON) can effectively reduce power loss and improve circuit efficiency, and is widely used in communication equipment, power management and small household appliances.
STN1N20-VB is a single N-channel MOSFET in SOT223 package, suitable for medium and high voltage applications, with a drain-source voltage (VDS) of 200V and a maximum drain current (ID) of 1A. This MOSFET adopts Trench technology, with high operating stability and low power consumption. Its threshold voltage (Vth) is 3V, and it has a high conduction capability (RDS(ON) of 1200mΩ) at a gate-source voltage (VGS) of 10V. STN1N20-VB is suitable for various power switches, regulation circuits and signal processing applications, especially those with low current and medium voltage requirements. Its low RDS(ON) can effectively reduce power loss and improve circuit efficiency, and is widely used in communication equipment, power management and small household appliances.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | 1200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
STN1N20-VB MOSFET Detailed parameter description
- **Package type**: SOT223
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- At VGS = 10V: 1200mΩ
- **Maximum drain current (ID)**: 1A
- **Technology**: Trench technology
- **Package type**: SOT223
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- At VGS = 10V: 1200mΩ
- **Maximum drain current (ID)**: 1A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Low-power switching circuits**
The high voltage and low leakage current characteristics of STN1N20-VB make it suitable for low-power switching circuits, such as switching power supplies, LED driver circuits, and low-current control systems in small electronic devices. Its low RDS(ON) value reduces switching losses, thereby improving the efficiency of the circuit.
2. **Battery Management System (BMS)**
Due to the medium current carrying capacity and high VDS of STN1N20-VB, it is suitable for switching circuits in battery management systems. For example, in the battery protection and charge and discharge control circuits of portable devices, smart home appliances, and power tools, MOSFETs can effectively switch currents and provide reliable battery monitoring and management.
3. **DC-DC converters**
The high VDS of STN1N20-VB makes it suitable for low-power DC-DC converters such as power modules and voltage regulators. Its low RDS(ON) value ensures that the circuit can operate with low loss and high efficiency, and is suitable for portable devices, consumer electronics, wireless transmission equipment, etc.
4. **Signal conditioning and protection circuits**
In signal conditioning circuits and overvoltage protection circuits, STN1N20-VB has excellent voltage tolerance (200V), which is suitable for protecting sensitive circuits from voltage surges. It can quickly respond to changes in signal input, play a switching or protection role, and is widely used in high-voltage input equipment.
5. **Communication equipment power management**
STN1N20-VB is suitable for power management circuits in communication equipment, especially in equipment with 5V-12V power supply. Its low on-resistance and high VDS can handle the switching requirements in the power module, ensure stable operation of the system, and reduce power loss.
6. **Small household appliances control**
In the control circuits of small household appliances (such as electric fans, air conditioners, microwave ovens, etc.), STN1N20-VB can be used as a power switching element to handle the tasks of switching and regulating current. It can work stably at higher voltages and has lower switching losses, making it suitable for low-power, low-current electrical equipment.
STN1N20-VB MOSFET has higher drain-source voltage and lower on-resistance, making it suitable for low-current, high-voltage power switching applications. It is widely used in battery management, low-power DC-DC conversion, signal protection circuits, and household appliance control.
1. **Low-power switching circuits**
The high voltage and low leakage current characteristics of STN1N20-VB make it suitable for low-power switching circuits, such as switching power supplies, LED driver circuits, and low-current control systems in small electronic devices. Its low RDS(ON) value reduces switching losses, thereby improving the efficiency of the circuit.
2. **Battery Management System (BMS)**
Due to the medium current carrying capacity and high VDS of STN1N20-VB, it is suitable for switching circuits in battery management systems. For example, in the battery protection and charge and discharge control circuits of portable devices, smart home appliances, and power tools, MOSFETs can effectively switch currents and provide reliable battery monitoring and management.
3. **DC-DC converters**
The high VDS of STN1N20-VB makes it suitable for low-power DC-DC converters such as power modules and voltage regulators. Its low RDS(ON) value ensures that the circuit can operate with low loss and high efficiency, and is suitable for portable devices, consumer electronics, wireless transmission equipment, etc.
4. **Signal conditioning and protection circuits**
In signal conditioning circuits and overvoltage protection circuits, STN1N20-VB has excellent voltage tolerance (200V), which is suitable for protecting sensitive circuits from voltage surges. It can quickly respond to changes in signal input, play a switching or protection role, and is widely used in high-voltage input equipment.
5. **Communication equipment power management**
STN1N20-VB is suitable for power management circuits in communication equipment, especially in equipment with 5V-12V power supply. Its low on-resistance and high VDS can handle the switching requirements in the power module, ensure stable operation of the system, and reduce power loss.
6. **Small household appliances control**
In the control circuits of small household appliances (such as electric fans, air conditioners, microwave ovens, etc.), STN1N20-VB can be used as a power switching element to handle the tasks of switching and regulating current. It can work stably at higher voltages and has lower switching losses, making it suitable for low-power, low-current electrical equipment.
STN1N20-VB MOSFET has higher drain-source voltage and lower on-resistance, making it suitable for low-current, high-voltage power switching applications. It is widely used in battery management, low-power DC-DC conversion, signal protection circuits, and household appliance control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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