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STN1N20SPY-VB Product details
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STN1N20SPY-VB MOSFET Product Introduction
STN1N20SPY-VB is a single N-channel power MOSFET in SOT223 package, designed for high voltage and low current applications. Manufactured using Trench technology, this MOSFET provides excellent conduction performance and reliability, and is suitable for applications such as power management and switching control that require high voltage resistance and medium current. Its maximum drain-source voltage (VDS) is 200V and its maximum drain current (ID) is 1A, making it suitable for battery-powered systems, power modules, and low-power switching circuits. STN1N20SPY-VB has a higher gate threshold voltage (Vth) and a higher on-resistance (RDS(ON)), enabling it to provide stable switching performance in different applications and effectively reduce power losses under appropriate operating conditions.
STN1N20SPY-VB is a single N-channel power MOSFET in SOT223 package, designed for high voltage and low current applications. Manufactured using Trench technology, this MOSFET provides excellent conduction performance and reliability, and is suitable for applications such as power management and switching control that require high voltage resistance and medium current. Its maximum drain-source voltage (VDS) is 200V and its maximum drain current (ID) is 1A, making it suitable for battery-powered systems, power modules, and low-power switching circuits. STN1N20SPY-VB has a higher gate threshold voltage (Vth) and a higher on-resistance (RDS(ON)), enabling it to provide stable switching performance in different applications and effectively reduce power losses under appropriate operating conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | 1200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
STN1N20SPY-VB MOSFET Detailed parameter description
- **Model**: STN1N20SPY-VB
- **Package**: SOT223
- **Configuration**: Single N-channel
- **VDS** (drain-source voltage): 200V
- **VGS** (gate-source voltage): ±20V
- **Vth** (gate threshold voltage): 3V
- **RDS(ON)** (on-resistance): 1200mΩ @ VGS = 10V
- **ID** (maximum drain current): 1A
- **Technology**: Trench technology
- **Model**: STN1N20SPY-VB
- **Package**: SOT223
- **Configuration**: Single N-channel
- **VDS** (drain-source voltage): 200V
- **VGS** (gate-source voltage): ±20V
- **Vth** (gate threshold voltage): 3V
- **RDS(ON)** (on-resistance): 1200mΩ @ VGS = 10V
- **ID** (maximum drain current): 1A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples of STN1N20SPY-VB MOSFET
1. **Power management system**
STN1N20SPY-VB is suitable for various power management applications, especially in switching power supplies and battery management systems in high voltage environments. The 200V drain-source voltage and 1A current carrying capacity of this MOSFET make it suitable for some lower power power modules, especially power conversion systems that require stable control at high voltage. It can effectively improve the efficiency of the power module and reduce energy loss in the system.
2. **Battery management system (BMS)**
In the battery management system (BMS), STN1N20SPY-VB can be used as a battery charge and discharge control element. Its higher VDS (200V) makes it suitable for many types of battery systems, especially high voltage batteries. The low current requirement (maximum 1A) makes it very suitable for battery monitoring and protection circuits, especially in lower power battery applications, such as battery management systems for small portable devices or power tools.
3. **Low-power switching applications**
This MOSFET is suitable for low-power switch control applications. In such applications, the STN1N20SPY-VB can effectively act as a switching element to control the flow of current, especially in environments with lower currents (such as less than 1A) and higher voltages (such as 200V). This makes it very useful in home appliances, lightweight power tools and small power systems, where system performance can be optimized by improving efficiency and reducing heat.
4. **Load switches and protection circuits**
STN1N20SPY-VB is suitable for various load switches and protection circuits, especially in situations where high withstand voltage and medium current carrying capacity are required. Its stable switching performance and high withstand voltage make it an ideal choice for load protection circuits, enabling effective switch control when overcurrent or short circuit occurs in the circuit, thereby protecting downstream equipment from damage.
5. **Home appliances and small power equipment**
Due to its high voltage tolerance and low power requirements, the STN1N20SPY-VB is very suitable for home appliances and small power equipment. It can provide reliable switching control in power systems with higher voltage and lower power, such as electric fans, electric heaters, portable chargers, etc.
6. **Automotive electronic systems**
In automotive electronic systems, the STN1N20SPY-VB can be used as a load switching element to control the switching operation of low-power electrical loads, especially in higher voltage environments (such as 12V or 24V battery voltage). It can provide stable switching performance and ensure that the system operates efficiently during the switching process, and is particularly suitable for vehicle lighting systems, battery management and low-power drive modules.
1. **Power management system**
STN1N20SPY-VB is suitable for various power management applications, especially in switching power supplies and battery management systems in high voltage environments. The 200V drain-source voltage and 1A current carrying capacity of this MOSFET make it suitable for some lower power power modules, especially power conversion systems that require stable control at high voltage. It can effectively improve the efficiency of the power module and reduce energy loss in the system.
2. **Battery management system (BMS)**
In the battery management system (BMS), STN1N20SPY-VB can be used as a battery charge and discharge control element. Its higher VDS (200V) makes it suitable for many types of battery systems, especially high voltage batteries. The low current requirement (maximum 1A) makes it very suitable for battery monitoring and protection circuits, especially in lower power battery applications, such as battery management systems for small portable devices or power tools.
3. **Low-power switching applications**
This MOSFET is suitable for low-power switch control applications. In such applications, the STN1N20SPY-VB can effectively act as a switching element to control the flow of current, especially in environments with lower currents (such as less than 1A) and higher voltages (such as 200V). This makes it very useful in home appliances, lightweight power tools and small power systems, where system performance can be optimized by improving efficiency and reducing heat.
4. **Load switches and protection circuits**
STN1N20SPY-VB is suitable for various load switches and protection circuits, especially in situations where high withstand voltage and medium current carrying capacity are required. Its stable switching performance and high withstand voltage make it an ideal choice for load protection circuits, enabling effective switch control when overcurrent or short circuit occurs in the circuit, thereby protecting downstream equipment from damage.
5. **Home appliances and small power equipment**
Due to its high voltage tolerance and low power requirements, the STN1N20SPY-VB is very suitable for home appliances and small power equipment. It can provide reliable switching control in power systems with higher voltage and lower power, such as electric fans, electric heaters, portable chargers, etc.
6. **Automotive electronic systems**
In automotive electronic systems, the STN1N20SPY-VB can be used as a load switching element to control the switching operation of low-power electrical loads, especially in higher voltage environments (such as 12V or 24V battery voltage). It can provide stable switching performance and ensure that the system operates efficiently during the switching process, and is particularly suitable for vehicle lighting systems, battery management and low-power drive modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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