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STN110NH02LT4-VB Product details

Product introduction:

STN110NH02LT4-VB MOSFET Product Introduction

STN110NH02LT4-VB is a high-performance N-Channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 20V, and the drain current (ID) can reach 100A. When the gate-source voltage (VGS) is 4.5V, the on-resistance (RDS(ON)) of this MOSFET is only 4.5mΩ, with very low switching loss and extremely low conduction loss, and can provide efficient current transmission. Its threshold voltage (Vth) ranges from 0.5V to 1.5V, which adapts to a wide range of driving voltage requirements. STN110NH02LT4-VB uses Trench technology to optimize the on-resistance and switching speed, making it perform well in high-frequency and high-current applications. This MOSFET is suitable for high-power power supplies, battery management, and various electronic devices that require efficient switching control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 20V 0.5~1.5V 100A 6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 20V 0.5~1.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 20V 0.5~1.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
STN110NH02LT4-VB MOSFET Detailed parameter description

- **Package type**: TO252
- **Configuration**: Single N-Channel
- **VDS (drain-source voltage)**: 20V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 0.5V ~ 1.5V
- **RDS(ON) (on-resistance)**:
- 6mΩ@VGS=2.5V
- 4.5mΩ@VGS=4.5V
- **ID (drain current)**: 100A
- **Technology**: Trench (trench technology)

Domain and module applications:

Applications and modules

1. **High-efficiency power management system**
STN110NH02LT4-VB is an ideal switching element in high-efficiency power management systems. Due to its ultra-low on-resistance (RDS(ON)) and high current capability, it can significantly reduce energy loss in power conversion and improve power efficiency, especially in low-voltage and high-current applications. It is suitable for use as a core switching element in power modules such as DC-DC converters and linear power supplies.

2. **Battery Management System (BMS)**
In a battery management system (BMS), STN110NH02LT4-VB can be used for battery charge and discharge control. Due to its high current carrying capacity and low on-resistance, it can ensure that the battery is working under high load conditions, reducing heat generation and improving the overall efficiency and battery life of the system. This MOSFET is particularly suitable for electric vehicles (EVs) and other portable battery-powered devices that require precise current control.

3. **Power Tools and High-Power Equipment**
Due to its ability to withstand drain currents up to 100A, the STN110NH02LT4-VB is suitable for high-power power tools and other high-power equipment. It is used in the power management and battery protection systems of power tools to achieve efficient current control during battery charging and discharging, ensuring long-term use and safe operation of batteries and tools.

4. **LED Drive Circuit**
The STN110NH02LT4-VB can be used as a current control switch element in LED drive circuits, especially under low voltage and high current drive requirements. Its ultra-low on-resistance enables LED lighting systems to achieve higher light efficiency and longer service life, while reducing heat and losses in the power system and improving overall lighting efficiency.

5. **Automotive Electronic Systems**
In the field of automotive electronics, the STN110NH02LT4-VB can be used in power conversion, battery management and electric drive systems. Due to its durable structure and high current carrying capacity, this MOSFET is suitable for battery management systems (BMS), charging management and power control systems in electric vehicles (EV) and hybrid electric vehicles (HEV), providing stable current control and improving the energy efficiency and endurance of the vehicle.

6. **Industrial Power and Electric Drive**
STN110NH02LT4-VB is also suitable for industrial power systems such as robots, electric drive systems and other high-power devices. Its high current capability and low on-resistance enable it to provide stable current control in these high-load applications, helping to improve the stability and operating efficiency of the equipment, especially in industrial environments that require high performance and high reliability.

7. **Power Amplifier and RF Applications**
This MOSFET is also suitable for power amplifier and radio frequency (RF) applications, performing well in environments that require high current switching and high-frequency operation. It can reduce the energy loss of the system and improve the efficiency of signal amplification, and is widely used in communication systems and other RF equipment.

The high efficiency performance of STN110NH02LT4-VB enables it to perform well in many fields such as power management, battery control, LED drive, industrial drive, etc. It is particularly suitable for high-performance applications that require large current, efficient conversion and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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