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STM8300-VB Product details

Product introduction:

STM8300-VB MOSFET Product Introduction

The STM8300-VB is a bipolar N-channel and P-channel MOSFET in a SOP8 package suitable for medium voltage (±30V) and current (±8A) control applications. This MOSFET has a low on-resistance (RDS(ON)), provides efficient current transfer and significantly reduces power consumption and heat generation, and is suitable for use in power switches, converters, and motor drive circuits. The STM8300-VB uses Trench technology, which allows it to operate efficiently at low voltages while maintaining excellent switching and thermal performance. Its threshold voltages (Vth) are 1.6V and -1.7V, respectively, which meet the needs of different types of circuits. Due to its dual N-channel and P-channel configuration, the STM8300-VB provides more circuit design flexibility, especially for applications with symmetrical or bidirectional current flow.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A 18/40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P
STM8300-VB MOSFET detailed parameter description

- **Package type**: SOP8
- **Configuration**: Dual-N+P-Channel
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N channel: 1.6V
- P channel: -1.7V
- **On-resistance (RDS(ON))**:
- At VGS = 4.5V:
- N channel: 24mΩ
- P channel: 50mΩ
- At VGS = 10V:
- N channel: 18mΩ
- P channel: 40mΩ
- **Maximum drain current (ID)**: ±8A
- **Technology**: Trench Technology

Domain and module applications:

Application areas and module examples

1. **H-bridge circuit**
The STM8300-VB uses a dual N-channel and P-channel configuration, which is very suitable for use as a switching element in an H-bridge circuit. H-bridge circuits are commonly used in motor drives, servo controls, and other applications that require bidirectional current flow. The low RDS(ON) provided by the STM8300-VB enables the H-bridge circuit to operate at lower power consumption and higher efficiency, which is particularly suitable for power tools, electric vehicles, electric servos, and robots.

2. **DC-DC converter (DC-DC)**
In DC-DC converters, the dual N-channel and P-channel structure of the STM8300-VB is very suitable for full-bridge or half-bridge topologies. These converters can be used in power supply regulation, boost or buck applications such as portable devices, industrial power modules, and battery management systems. Its low on-resistance reduces power loss and heat generation, ensuring efficient energy conversion.

3. **Inverter circuit**
The N-channel and P-channel MOSFET configurations of the STM8300-VB are ideal for inverter circuits, especially in solar inverters, UPS systems, and other low- to medium-power inverters, providing efficient current switching capabilities. This MOSFET can handle positive and negative currents in the inverter circuit, ensuring system stability and reducing heat loss.

4. **Battery Management System (BMS)**
The dual N-channel and P-channel structure of the STM8300-VB is particularly suitable for battery management systems (BMS), especially when it is necessary to control battery charging and discharging at the same time, and can switch current efficiently. Its low on-resistance and high current carrying capacity make it an ideal choice for battery protection and management in electric vehicles (EVs), energy storage systems, and portable devices.

5. **Power Factor Correction (PFC) Circuit**
The bipolar configuration of STM8300-VB is suitable for power factor correction (PFC) circuits, especially bidirectional PFC applications. In power systems, MOSFETs can optimize current waveforms, improve system power factors, and reduce reactive power consumption. This is essential for applications such as high-efficiency power supplies, UPS, and power conversion equipment.

6. **Load Switch and Protection Circuit**
Since STM8300-VB has dual N-channel and P-channel MOSFETs, it can be used in load switches and circuit protection modules. For example, the load switch function is implemented in the power module to ensure that functions such as overcurrent protection and short-circuit protection are effectively implemented. Its reliable switching performance ensures the safety of the circuit and is widely used in communications, automotive electronics, and home appliances.

STM8300-VB MOSFET, with its low on-resistance, high current carrying capability and bipolar structure, has broad application prospects in multiple application fields such as power conversion, drive circuits and battery management, and can provide efficient and stable current control and switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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