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STM6610-VB Product details

Product introduction:

Product Introduction: STM6610-VB MOSFET

STM6610-VB is a dual N-channel MOSFET with low on-resistance and high current carrying capacity, packaged in SOP8. The device uses Trench technology to provide excellent performance and low power consumption. STM6610-VB has a maximum V_DS of 30V and is suitable for applications such as high-efficiency switching power supplies, DC-DC converters, and load switches. Due to its low R_DS(ON) (16mΩ @V_GS=10V), it can provide higher efficiency and reduce heat generation in the system, making it ideal for electronic devices that require high performance and small size.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+N 30V 1.7V 8.5A 16mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+N 30V 1.7V 8.5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+N 30V 1.7V 8.5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+N
Detailed parameter description

- **Model**: STM6610-VB
- **Package**: SOP8
- **Configuration**: Dual-N+N-Channel (dual N channel)
- **V_DS**: 30V (maximum drain-source voltage)
- **V_GS**: ±20V (maximum gate-source voltage)
- **V_th**: 1.7V (gate threshold voltage)
- **R_DS(ON)**:
- 20mΩ @V_GS=4.5V (on-resistance when gate-source voltage is 4.5V)
- 16mΩ @V_GS=10V (on-resistance when gate-source voltage is 10V)
- **I_D**: 8.5A (maximum drain current)
- **Technology**: Trench (trench technology)

Domain and module applications:

Typical application areas and module examples

1. **DC-DC converter**
The low R_DS(ON) characteristic of STM6610-VB makes it extremely efficient in DC-DC converters. It can effectively reduce power losses and ensure more efficient thermal management of the converter. Due to its excellent switching performance, it is suitable for various load requirements, especially in power management applications that require high efficiency and fast response.

2. **Battery management system**
In the battery management system, STM6610-VB can be used for battery switch management. Because it can withstand large currents (maximum 8.5A), it can provide fast and efficient switch control during the battery charging and discharging process, ensuring that the battery charging and discharging process is stable and safe.

3. **Load switch**
In load switch applications, STM6610-VB provides fast switching capabilities and can withstand high currents. In the power management module, it can effectively control the connection and disconnection of the load, reduce heat generation, and improve the working efficiency of the system.

4. **Power amplifier**
STM6610-VB is also suitable for power amplifier circuits, especially in RF power amplifiers for handling higher current loads. Its low on-resistance reduces power loss in the amplifier and improves the transmission efficiency of the device.

5. **Automotive electronic systems**
In automotive electronic systems, STM6610-VB can be used as a switching device in the fields of motor control, sensor drive, etc. Its high efficiency on-resistance and high current carrying capacity make it very valuable in electric vehicles and autonomous driving systems.

In general, as an efficient and reliable dual N-channel MOSFET, STM6610-VB can meet the needs of a variety of high-performance electronic devices and is widely used in power management, electric vehicles, consumer electronics and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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