**STL60NH3LL-VB** is a high-performance **Single-N-Channel MOSFET**, which adopts **DFN8(5X6)** package and is designed for low-voltage, high-current applications. Its **maximum drain-source voltage (VDS)** is **30V**, supporting **80A** maximum drain current, which is very suitable for power management and current control applications that require high efficiency and low power loss. The **on-resistance (RDS(ON))** of this MOSFET is only **7mΩ** when **VGS=10V**, which effectively reduces power loss and heat accumulation and ensures efficient working performance. It adopts **Trench** technology, has excellent switching characteristics and low on-resistance, and is very suitable for high-speed switching applications.
- **High drain-source voltage (VDS)**: Maximum **30V**, suitable for low-voltage applications such as battery management and efficient power conversion. - **High drain current (ID)**: Supports **80A** of drain current, capable of working efficiently and stably under high power loads. - **Low on-resistance (RDS(ON))**: At **VGS=10V**, the on-resistance is **7mΩ**, and at **VGS=4.5V**, it is **9mΩ**, effectively reducing power loss. - **Package type**: Adopt **DFN8(5X6)** package, with smaller size and better thermal performance, suitable for applications with limited space and high requirements for heat dissipation. - **Threshold voltage (Vth)**: Minimum **1.7V**, can be enabled at lower gate voltage, suitable for low-voltage systems. - **Technology**: Adopt **Trench** technology, with excellent switching characteristics and low on-resistance, suitable for high-efficiency power supply and high-speed switching control.
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Domain and module applications：
Detailed parameter description
| **Parameter** | **Value** | **Unit** | **Description** | |--------------------|-----------------------------------|---------|--------------------------------------------------------| | **Package Type** | DFN8(5X6) | — | Small package for space-constrained and high-power applications with excellent heat dissipation. | | **Configuration** | Single-N-Channel | — | Single N-channel MOSFET for high-efficiency power and current control applications. | | **Drain-Source Voltage (VDS)** | 30V | V | Maximum drain-source voltage for low-voltage and high-efficiency power management applications. | | **Gate-Source Voltage (VGS)** | ±20V | V | Supports gate voltages of ±20V for standard gate drive voltage applications. | | **Threshold Voltage (Vth)** | 1.7V | V | Low turn-on threshold voltage ensures that the MOSFET turns on at a lower gate voltage. | | **On-resistance (RDS(ON))** | 9mΩ@VGS=4.5V | Ω | On-resistance at **VGS=4.5V**, suitable for low power loss applications. | | **On-resistance (RDS(ON))** | 7mΩ@VGS=10V | Ω | On-resistance at **VGS=10V**, providing lower power loss. | | **Drain current (ID)** | 80A | A | Maximum drain current, suitable for high current load applications such as power conversion and electric drives. | | **Technology** | Trench | — | Adopts Trench technology to reduce on-resistance and improve switching performance. | | **Operating temperature range** | -55 ~ 150°C | °C | Wide temperature range, suitable for industrial and high power environments. |
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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