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STL110N10F7-VB Product details

Product introduction:

1. **Product Introduction - STL110N10F7-VB**

STL110N10F7-VB is a unipolar N-type MOSFET in DFN8(5x6) package with high drain-source voltage (VDS 100V) and very low on-resistance (RDS(ON) = 6mΩ @ VGS=4.5V and 5mΩ @ VGS=10V), which is very suitable for high-efficiency, high-current power management and switching applications. STL110N10F7-VB adopts Trench technology with a maximum drain current of 100A, which is suitable for application scenarios requiring high current and low power loss, such as battery-driven equipment, inverters, power adapters, etc.

Designed for low-resistance, high-power applications, this MOSFET can effectively reduce energy losses, optimize system efficiency, and has excellent thermal management capabilities. Its high performance and small package make it excel in systems with limited space but high power requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 100V 1~3V 100A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 100V 1~3V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 100V 1~3V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
2. **Detailed parameter description**

- **Package type**: DFN8(5x6)
- **Configuration**: Unipolar N-type MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1~3V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 100A
- **Technology type**: Trench technology
- **Power dissipation**: The specific value depends on the thermal design in the application, suitable for high-efficiency power systems and high-current applications.
- **Operating temperature range**: -55°C to 150°C (suitable for industrial and high temperature environments)

Domain and module applications:

3. **Application fields and module examples**

- **High-efficiency switching power supply (SMPS)**: The STL110N10F7-VB is suitable for high-current switching applications in high-efficiency switching power supplies (SMPS). Due to its low on-resistance, this MOSFET can significantly reduce switching losses and improve the overall power conversion efficiency. It is very suitable for power management systems that require high efficiency and low power consumption, such as power adapters, server power supplies, and industrial power supplies.

- **Electric vehicle (EV) battery management and charging system**: The STL110N10F7-VB is widely used in electric vehicles and their charging systems. Efficient power switches are required in battery management systems (BMS) to regulate battery current, especially during battery charging and discharging. Due to the low on-resistance and high current handling capability of this MOSFET, it can effectively control battery voltage and current in EV battery management systems, optimize battery charging and discharging performance, and improve the overall efficiency of the battery.

- **Motor drive system**: In motor drive systems for industrial and consumer electronics, the STL110N10F7-VB can be used to control high current loads, especially in DC motor or brushless DC motor (BLDC Motor) drives that require high efficiency and high current switching. Due to its high current carrying capacity and low on-resistance, MOSFET can significantly reduce the power loss of the system, thereby improving motor drive efficiency and extending the service life of the system.

- **Inverter and solar power system**: The STL110N10F7-VB is an ideal choice for high-efficiency inverter and solar power generation systems. In inverter circuits, it can be used as a high-power switching element to help achieve efficient conversion from direct current (DC) to alternating current (AC). The low on-resistance and high withstand voltage characteristics enable it to work efficiently in high-power systems, reduce losses and improve overall efficiency, and are suitable for residential, industrial and solar power conversion modules.

- **Data Center Power Management**: In data centers and high-performance computing systems, the STL110N10F7-VB is used to provide efficient power supply. In these systems, the demand for high current and high power is very high, and the 100A drain current carrying capacity and extremely low on-resistance of this MOSFET make it an ideal choice for optimizing power transmission, reducing losses and improving energy efficiency. Such applications include power modules used to power servers and storage devices.

- **Battery-powered high-power consumer electronics devices**: The STL110N10F7-VB is also widely used in battery-powered high-power consumer electronics such as laptops, handheld devices and smart wearable devices. Its high current carrying capacity and low power loss characteristics make it ideal for battery management and power conversion modules in these devices. It can help extend battery life and provide a stable current supply during peak loads.

- **High-frequency switching and conversion circuits**: This MOSFET is also widely used in high-frequency switching and conversion circuits, especially for scenarios that require high current switching and low on-resistance. Its high switching frequency and high power capacity enable it to work stably at high frequencies, and is suitable for various fast-response power supply circuits, voltage regulators, and rectifier modules.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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