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STK3055E-VB Product details
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1. STK3055E-VB Product Introduction
STK3055E-VB is a single N-channel MOSFET in TO92 package, designed for medium voltage applications. With a drain-source voltage (VDS) of 60V, this MOSFET is suitable for high-efficiency power switching circuits that require no more than 60V. The maximum gate-source voltage of STK3055E-VB is ±20V, the turn-on voltage (Vth) is 2V, and the on-resistance (RDS(ON)) is 45.6mΩ (VGS=4.5V) and 38mΩ (VGS=10V), respectively, with excellent conductivity and low switching loss. This product adopts Trench technology, which can provide high efficiency and reliability, and is widely used in power management, power amplifiers and motor drives.
With its high drain current carrying capacity (28A) and low on-resistance, STK3055E-VB is an ideal choice for medium power level applications. Its compact TO92 package makes this MOSFET advantageous in space-constrained applications.
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STK3055E-VB is a single N-channel MOSFET in TO92 package, designed for medium voltage applications. With a drain-source voltage (VDS) of 60V, this MOSFET is suitable for high-efficiency power switching circuits that require no more than 60V. The maximum gate-source voltage of STK3055E-VB is ±20V, the turn-on voltage (Vth) is 2V, and the on-resistance (RDS(ON)) is 45.6mΩ (VGS=4.5V) and 38mΩ (VGS=10V), respectively, with excellent conductivity and low switching loss. This product adopts Trench technology, which can provide high efficiency and reliability, and is widely used in power management, power amplifiers and motor drives.
With its high drain current carrying capacity (28A) and low on-resistance, STK3055E-VB is an ideal choice for medium power level applications. Its compact TO92 package makes this MOSFET advantageous in space-constrained applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 60V | 2V | 28A | 38mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 60V | 2V | 28A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 60V | 2V | 28A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N |
2. Detailed explanation of STK3055E-VB parameters
| **Parameter** | **Description** |
|-------------------------|--------------------------------------------------------------|
| **Package type** | TO92 |
| **Configuration** | Single-N-Channel |
| **Drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Throughput voltage (Vth)** | 2V |
| **On-resistance (RDS(ON))** | 45.6mΩ @ VGS=4.5V；38mΩ @ VGS=10V |
| **Drain current (ID)** | 28A |
| **Maximum power dissipation (Ptot)** | Maximum power dissipation is suitable for medium power circuits according to the applied current and operating conditions|
| **Operating temperature range** | -55°C to +150°C |
| **Package Size** | TO92 for compact, medium power applications|
| **Technology** | Trench Technology|
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| **Parameter** | **Description** |
|-------------------------|--------------------------------------------------------------|
| **Package type** | TO92 |
| **Configuration** | Single-N-Channel |
| **Drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Throughput voltage (Vth)** | 2V |
| **On-resistance (RDS(ON))** | 45.6mΩ @ VGS=4.5V；38mΩ @ VGS=10V |
| **Drain current (ID)** | 28A |
| **Maximum power dissipation (Ptot)** | Maximum power dissipation is suitable for medium power circuits according to the applied current and operating conditions|
| **Operating temperature range** | -55°C to +150°C |
| **Package Size** | TO92 for compact, medium power applications|
| **Technology** | Trench Technology|
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Domain and module applications：
3. Application fields and module examples
1. **Power Management System**
STK3055E-VB is suitable for medium-power power management applications, especially in power conversion that requires high efficiency and low loss. Its low on-resistance and high current carrying capacity make it very suitable for use in efficient DC-DC converters. For example, it can be used as a main switch to provide efficient energy conversion in a power module to ensure the stability and efficiency of the system under high load.
2. **Power Amplifier**
In power amplification applications such as audio amplifiers or RF amplifiers, STK3055E-VB can provide excellent conductivity to ensure that the amplifier has low conduction losses when working. Its high current carrying capacity enables it to effectively drive high-power loads and is suitable for power amplifier circuits that require stable and high-power output.
3. **Motor Driver**
STK3055E-VB is also widely used in motor drive systems, especially in medium-power DC motor (DCM) drives. By adopting low on-resistance MOSFET, the device can effectively control the current and power of the motor, thereby achieving efficient drive and precise control, especially suitable for electric equipment such as power tools, electric vehicles and electric curtains.
4. **Battery Management System (BMS)**
This MOSFET is also suitable for battery management systems, especially in high-current battery charging and discharging management. STK3055E-VB can efficiently control the current flow of the battery, ensure efficient energy transfer during battery charging and discharging, and effectively prevent overcurrent protection and battery overheating problems.
5. **LED Driver Circuits**
In LED driver circuits, STK3055E-VB provides stable current control and low switching loss. In LED lighting modules that require precise current control and efficient energy transmission, this MOSFET can effectively control current, reduce losses, and increase brightness output. It is suitable for power management in high-power LED lighting and lighting systems.
6. **Relay control and switching applications**
This MOSFET can also be used in relay control circuits as an efficient switching element to switch low to medium current loads. For example, in small automation equipment, the STK3055E-VB can be used as a relay driver to control the on and off of low-voltage loads.
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The STK3055E-VB is a MOSFET that is very suitable for medium-power power management, power amplification, motor drive and battery management. Its excellent low on-resistance, high drain current and outstanding high efficiency make it an ideal choice for a wide range of applications in industrial, consumer electronics and automotive fields.
1. **Power Management System**
STK3055E-VB is suitable for medium-power power management applications, especially in power conversion that requires high efficiency and low loss. Its low on-resistance and high current carrying capacity make it very suitable for use in efficient DC-DC converters. For example, it can be used as a main switch to provide efficient energy conversion in a power module to ensure the stability and efficiency of the system under high load.
2. **Power Amplifier**
In power amplification applications such as audio amplifiers or RF amplifiers, STK3055E-VB can provide excellent conductivity to ensure that the amplifier has low conduction losses when working. Its high current carrying capacity enables it to effectively drive high-power loads and is suitable for power amplifier circuits that require stable and high-power output.
3. **Motor Driver**
STK3055E-VB is also widely used in motor drive systems, especially in medium-power DC motor (DCM) drives. By adopting low on-resistance MOSFET, the device can effectively control the current and power of the motor, thereby achieving efficient drive and precise control, especially suitable for electric equipment such as power tools, electric vehicles and electric curtains.
4. **Battery Management System (BMS)**
This MOSFET is also suitable for battery management systems, especially in high-current battery charging and discharging management. STK3055E-VB can efficiently control the current flow of the battery, ensure efficient energy transfer during battery charging and discharging, and effectively prevent overcurrent protection and battery overheating problems.
5. **LED Driver Circuits**
In LED driver circuits, STK3055E-VB provides stable current control and low switching loss. In LED lighting modules that require precise current control and efficient energy transmission, this MOSFET can effectively control current, reduce losses, and increase brightness output. It is suitable for power management in high-power LED lighting and lighting systems.
6. **Relay control and switching applications**
This MOSFET can also be used in relay control circuits as an efficient switching element to switch low to medium current loads. For example, in small automation equipment, the STK3055E-VB can be used as a relay driver to control the on and off of low-voltage loads.
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The STK3055E-VB is a MOSFET that is very suitable for medium-power power management, power amplification, motor drive and battery management. Its excellent low on-resistance, high drain current and outstanding high efficiency make it an ideal choice for a wide range of applications in industrial, consumer electronics and automotive fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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