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STK22N05-VB Product details
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1. STK22N05-VB Product Introduction
STK22N05-VB is a high-performance single N-channel MOSFET in TO92 package, designed for low-voltage power supplies and small electronic devices. With a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 28A, the device is very suitable for high-efficiency switching applications. Its low on-resistance (RDS(ON) = 45.6mΩ@VGS=4.5V and 38mΩ@VGS=10V) and Trench technology ensure extremely low switching losses and high efficiency, which is particularly suitable for low-voltage, high-frequency power management and switching circuits. The gate-source voltage (VGS) range of STK22N05-VB is ±20V, and the turn-on voltage (Vth) is 2V, which ensures its stable operation in various common drive circuits. The device is widely used in portable devices, battery-driven systems, low-power power supplies and switching circuits.
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STK22N05-VB is a high-performance single N-channel MOSFET in TO92 package, designed for low-voltage power supplies and small electronic devices. With a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 28A, the device is very suitable for high-efficiency switching applications. Its low on-resistance (RDS(ON) = 45.6mΩ@VGS=4.5V and 38mΩ@VGS=10V) and Trench technology ensure extremely low switching losses and high efficiency, which is particularly suitable for low-voltage, high-frequency power management and switching circuits. The gate-source voltage (VGS) range of STK22N05-VB is ±20V, and the turn-on voltage (Vth) is 2V, which ensures its stable operation in various common drive circuits. The device is widely used in portable devices, battery-driven systems, low-power power supplies and switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 60V | 2V | 28A | 38mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 60V | 2V | 28A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 60V | 2V | 28A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N |
2. STK22N05-VB Detailed parameter description
| **Parameter category** | **Parameter value** | **Description** |
|---------------------|---------------------------|--------------------------------------------|
| **Package** | TO92 | TO92 package is suitable for small low-power electronic applications|
| **Configuration** | Single-N-Channel | Single N-channel MOSFET, suitable for efficient switching control|
| **Drain-source voltage (VDS)** | 60V | Suitable for low-voltage power management and switching circuits|
| **Gate-source voltage (VGS)** | ±20V | Supports conventional drive circuits|
| **Turning voltage (Vth)** | 2V | Suitable for most drive circuits|
| **On-resistance (RDS(ON))** | 45.6mΩ @ VGS = 4.5V | Low on-resistance, reduced power loss|
| | 38mΩ @ VGS = 10V | Lower on-resistance for further optimized efficiency|
| **Maximum drain current (ID)** | 28A | Provides higher current handling capability for low to medium power applications|
| **Technology** | Trench | Trench technology for low conduction losses and efficient switching performance|
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| **Parameter category** | **Parameter value** | **Description** |
|---------------------|---------------------------|--------------------------------------------|
| **Package** | TO92 | TO92 package is suitable for small low-power electronic applications|
| **Configuration** | Single-N-Channel | Single N-channel MOSFET, suitable for efficient switching control|
| **Drain-source voltage (VDS)** | 60V | Suitable for low-voltage power management and switching circuits|
| **Gate-source voltage (VGS)** | ±20V | Supports conventional drive circuits|
| **Turning voltage (Vth)** | 2V | Suitable for most drive circuits|
| **On-resistance (RDS(ON))** | 45.6mΩ @ VGS = 4.5V | Low on-resistance, reduced power loss|
| | 38mΩ @ VGS = 10V | Lower on-resistance for further optimized efficiency|
| **Maximum drain current (ID)** | 28A | Provides higher current handling capability for low to medium power applications|
| **Technology** | Trench | Trench technology for low conduction losses and efficient switching performance|
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Domain and module applications：
3. Application fields and modules
#### 1. **Portable electronic devices**
STK22N05-VB is suitable for power management circuits of low-voltage portable electronic devices, such as smart phones, tablets and handheld devices. Due to its 60V withstand voltage and 28A current capability, STK22N05-VB can efficiently drive the power conversion modules in these devices, reduce power loss and heat generation, thereby extending battery life and improving overall working efficiency.
#### 2. **Low-power switching power supply**
In low-power switching power supplies, STK22N05-VB provides extremely low on-resistance (38mΩ@VGS=10V), making it very suitable for applications such as DC-DC converters and AC-DC power adapters. MOSFET can switch current efficiently and reduce internal losses and optimize power efficiency through its low on-resistance.
#### 3. **Battery Drive System**
STK22N05-VB is ideal for battery drive systems, especially in power tools, electric toys and mobile devices. MOSFET can be used as a power switch to regulate the battery charge and discharge process, and its low on-resistance and high drain current ensure that the system can operate efficiently and reliably.
#### 4. **LED Drive System**
This MOSFET is suitable for LED drive circuits, especially in low-power to medium-power lighting systems. The low RDS(ON) and high current handling capability of STK22N05-VB make it an ideal choice for efficiently driving LED modules. It can provide excellent performance in dimming and current control, thereby improving the efficiency and stability of LED lighting systems.
#### 5. **Power Management and Protection Circuits**
STK22N05-VB is also widely used in power management and overcurrent protection circuits. Its low on-resistance and high current carrying capacity make it suitable for implementing efficient current limiting and power protection functions, especially for power management modules in automotive electronics, consumer electronics, and various embedded systems.
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### Summary
STK22N05-VB is a high-efficiency N-channel MOSFET designed for low-power switching circuits. It uses a TO92 package with a drain-source voltage of 60V and a maximum drain current of 28A. Its low on-resistance and Trench technology make it very effective in portable devices, battery management, LED driving, and low-power switching power supplies. By reducing losses and improving efficiency, the STK22N05-VB provides excellent performance and reliability in multiple application areas.
#### 1. **Portable electronic devices**
STK22N05-VB is suitable for power management circuits of low-voltage portable electronic devices, such as smart phones, tablets and handheld devices. Due to its 60V withstand voltage and 28A current capability, STK22N05-VB can efficiently drive the power conversion modules in these devices, reduce power loss and heat generation, thereby extending battery life and improving overall working efficiency.
#### 2. **Low-power switching power supply**
In low-power switching power supplies, STK22N05-VB provides extremely low on-resistance (38mΩ@VGS=10V), making it very suitable for applications such as DC-DC converters and AC-DC power adapters. MOSFET can switch current efficiently and reduce internal losses and optimize power efficiency through its low on-resistance.
#### 3. **Battery Drive System**
STK22N05-VB is ideal for battery drive systems, especially in power tools, electric toys and mobile devices. MOSFET can be used as a power switch to regulate the battery charge and discharge process, and its low on-resistance and high drain current ensure that the system can operate efficiently and reliably.
#### 4. **LED Drive System**
This MOSFET is suitable for LED drive circuits, especially in low-power to medium-power lighting systems. The low RDS(ON) and high current handling capability of STK22N05-VB make it an ideal choice for efficiently driving LED modules. It can provide excellent performance in dimming and current control, thereby improving the efficiency and stability of LED lighting systems.
#### 5. **Power Management and Protection Circuits**
STK22N05-VB is also widely used in power management and overcurrent protection circuits. Its low on-resistance and high current carrying capacity make it suitable for implementing efficient current limiting and power protection functions, especially for power management modules in automotive electronics, consumer electronics, and various embedded systems.
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### Summary
STK22N05-VB is a high-efficiency N-channel MOSFET designed for low-power switching circuits. It uses a TO92 package with a drain-source voltage of 60V and a maximum drain current of 28A. Its low on-resistance and Trench technology make it very effective in portable devices, battery management, LED driving, and low-power switching power supplies. By reducing losses and improving efficiency, the STK22N05-VB provides excellent performance and reliability in multiple application areas.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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