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STK12N06L-VB Product details

Product introduction:

Product Introduction

**STK12N06L-VB** is a **single N-channel MOSFET** in a **TO92** package, designed for low to medium power applications, with a **60V** maximum drain-source voltage (VDS) and **28A** maximum drain current (ID). This MOSFET uses **Trench technology**, and its **RDS(ON)** is **45.6mΩ** @ **VGS=4.5V** and **38mΩ** @ **VGS=10V**, respectively, providing a lower on-resistance, suitable for power applications that require higher current and lower resistance, such as power conversion, motor control and other fields. Due to its compact **TO92** package, it is suitable for space-constrained applications and supports higher current output.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO92 Single-N 60V 2V 28A 38mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO92 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO92 Single-N 60V 2V 28A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO92 Single-N 60V 2V 28A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO92 Single-N
Detailed parameter description

| **Parameter category** | **Parameter value** | **Description** |
|--------------------------|----------------------------------|------------------------------------------------------------|
| **Package type** | TO92 | **TO92** package, suitable for space-constrained applications, with good mechanical strength and electrical performance|
| **Channel configuration** | Single-N-Channel | Single-channel N-channel configuration, suitable for efficient current switching operation|
| **Maximum drain-source voltage (VDS)** | 60V | Maximum withstand voltage **60V**, suitable for medium-voltage power supply applications, supporting efficient switching control|
| **Maximum gate drive voltage (VGS)** | ±20V | Gate drive voltage range is **±20V**, supporting high gate drive flexibility|
| **Threshold voltage (Vth)** | 2V | **2V** threshold voltage enables effective switching operation at lower gate voltages|
| **On-resistance (RDS(ON))** | 45.6mΩ @ VGS=4.5V | **45.6mΩ** on-resistance at **4.5V** gate voltage, suitable for medium current applications|
| **On-resistance (RDS(ON))** | 38mΩ @ VGS=10V | **38mΩ** on-resistance at **10V** gate voltage, showing lower power dissipation and higher efficiency|
| **Maximum drain current (ID)** | 28A | Maximum drain current of **28A**, suitable for efficient switching operation of medium current loads|
| **Technology type** | Trench | Using **Trench technology**, providing lower on-resistance, suitable for efficient power management applications|

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Domain and module applications:

Application fields and module examples

1. **DC-DC converter**
- **Application scenario**: STK12N06L-VB can be used in **DC-DC converter**, such as **buck converter** or **boost converter**.
- **Description**: Due to its **60V** drain-source voltage and **28A** high current capability, this MOSFET is suitable for power conversion systems, providing stable current control and low-loss energy conversion. Its **RDS(ON)** is low, which can ensure high efficiency under high-frequency switching operation.

2. **Motor drive system**
- **Application scenario**: Suitable for **motor drive modules**, especially the control of low-power motors.
- **Description**: The **low RDS(ON)** of STK12N06L-VB makes it very efficient in motor drive applications, providing fast switching speeds and low energy losses. Its **28A** drain current is sufficient to drive small and medium-sized motors and is widely used in home appliances, industrial control equipment and other fields.

3. **Switching Power Supply**
- **Application Scenario**: STK12N06L-VB can be used for **switching power supply (SMPS)**, such as **AC-DC power adapter** or **DC-DC conversion module**.
- **Description**: This MOSFET can act as a power switching element in a switching power supply, supporting efficient power conversion through its low **RDS(ON)** and higher drain current, and is suitable for a variety of power supply designs, including laptop adapters, battery chargers, etc.

4. **LED Drive Circuit**
- **Application Scenario**: STK12N06L-VB can also be used for **LED drive circuits**, especially in high-efficiency lighting applications.
- **Description**: Due to its high **drain current capability (28A)** and low **on-resistance (RDS(ON))**, this MOSFET can provide efficient power transfer in LED drivers while ensuring low power consumption and long service life. It is suitable for various commercial and industrial-grade LED driver designs.

5. **Battery Management System (BMS)**
- **Application Scenario**: This MOSFET can be used in **Battery Management System (BMS)**, especially for systems that require efficient current switching.
- **Description**: In the BMS system, the STK12N06L-VB can be used for battery charge and discharge control and protection, especially for balancing and battery voltage monitoring of multi-string battery packs. Its **28A** high drain current and low on-resistance make it efficient and stable during the charge and discharge process.

6. **Load switch**
- **Application scenario**: STK12N06L-VB can also be used in **load switch systems**, such as load switches for industrial equipment and power control systems.
- **Description**: As an efficient switching element, STK12N06L-VB can provide high current support and stability in various load switching applications, ensuring safe switching and current regulation of loads.

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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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