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STK1040F-VB Product details

Product introduction:

Product Introduction

**STK1040F-VB** is a **Single-N-Channel MOSFET** in a **TO220F** package, designed for high voltage applications. It has a maximum drain voltage (VDS) of **550V** and supports a drain current (ID) of **18A**. This product uses **Plannar** technology to provide stable performance and reliability, and is particularly suitable for medium and high voltage switching power supplies and power management systems. Its **RDS(ON)** is **260mΩ** at **VGS=10V**, which is suitable for applications with low power loss requirements. **STK1040F-VB** is suitable for power electronic equipment, switching power supplies, and power management systems for industrial and consumer electronics.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 550V 3V 18A 260mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 550V 3V 18A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 550V 3V 18A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
Main features:
- **High drain voltage**: Supports a maximum drain voltage of **550V**, suitable for medium and high voltage power management applications.
- **Drain current capability**: Maximum drain current is **18A**, suitable for applications carrying medium current loads.
- **On-resistance (RDS(ON))**: At **VGS=10V**, the on-resistance is **260mΩ**, ensuring stable switching control under reasonable power loss.
- **Package type**: Adopts **TO220F** package, suitable for applications requiring good heat dissipation performance, especially in high power environments.
- **Technology**: Based on **Plannar** technology, it provides relatively stable and efficient switching performance, suitable for applications with high voltage and medium current loads.

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Domain and module applications:

Detailed parameter description

| **Parameter** | **Value** | **Unit** | **Description** |
|--------------------|-----------------------------------|---------|--------------------------------------------------------|
| **Package Type** | TO220F | — | High power package for applications requiring good heat dissipation. |
| **Configuration** | Single-N-Channel | — | Single N-channel MOSFET for high voltage switch control and power management. |
| **Drain-Source Voltage (VDS)** | 550V | V | Maximum drain-source voltage for medium and high voltage switch and power control applications. |
| **Gate-Source Voltage (VGS)** | ±30V | V | Supports gate voltages of ±30V for applications with different gate drive voltages. |
| **Threshold Voltage (Vth)** | 3V | V | Turn-on threshold voltage, below which the MOSFET is in the off state. |
| **On-resistance (RDS(ON))** | 260mΩ@VGS=10V | Ω | On-resistance at **VGS=10V**, providing stable performance and appropriate power consumption. |
| **Drain current (ID)** | 18A | A | Maximum drain current, suitable for power systems with medium current loads. |
| **Technology** | Plannar | — | Plannar technology is used to provide relatively stable switching performance and reliability. |
| **Operating temperature range** | -55 ~ 150°C | °C | Wide temperature range, suitable for applications in various industrial and high temperature environments. |

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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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