STK1040F-VB Product details
Product introduction:
**STK1040F-VB** is a **Single-N-Channel MOSFET** in a **TO220F** package, designed for high voltage applications. It has a maximum drain voltage (VDS) of **550V** and supports a drain current (ID) of **18A**. This product uses **Plannar** technology to provide stable performance and reliability, and is particularly suitable for medium and high voltage switching power supplies and power management systems. Its **RDS(ON)** is **260mΩ** at **VGS=10V**, which is suitable for applications with low power loss requirements. **STK1040F-VB** is suitable for power electronic equipment, switching power supplies, and power management systems for industrial and consumer electronics.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **High drain voltage**: Supports a maximum drain voltage of **550V**, suitable for medium and high voltage power management applications.
- **Drain current capability**: Maximum drain current is **18A**, suitable for applications carrying medium current loads.
- **On-resistance (RDS(ON))**: At **VGS=10V**, the on-resistance is **260mΩ**, ensuring stable switching control under reasonable power loss.
- **Package type**: Adopts **TO220F** package, suitable for applications requiring good heat dissipation performance, especially in high power environments.
- **Technology**: Based on **Plannar** technology, it provides relatively stable and efficient switching performance, suitable for applications with high voltage and medium current loads.
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Domain and module applications:
| **Parameter** | **Value** | **Unit** | **Description** |
|--------------------|-----------------------------------|---------|--------------------------------------------------------|
| **Package Type** | TO220F | — | High power package for applications requiring good heat dissipation. |
| **Configuration** | Single-N-Channel | — | Single N-channel MOSFET for high voltage switch control and power management. |
| **Drain-Source Voltage (VDS)** | 550V | V | Maximum drain-source voltage for medium and high voltage switch and power control applications. |
| **Gate-Source Voltage (VGS)** | ±30V | V | Supports gate voltages of ±30V for applications with different gate drive voltages. |
| **Threshold Voltage (Vth)** | 3V | V | Turn-on threshold voltage, below which the MOSFET is in the off state. |
| **On-resistance (RDS(ON))** | 260mΩ@VGS=10V | Ω | On-resistance at **VGS=10V**, providing stable performance and appropriate power consumption. |
| **Drain current (ID)** | 18A | A | Maximum drain current, suitable for power systems with medium current loads. |
| **Technology** | Plannar | — | Plannar technology is used to provide relatively stable switching performance and reliability. |
| **Operating temperature range** | -55 ~ 150°C | °C | Wide temperature range, suitable for applications in various industrial and high temperature environments. |
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Technical support:
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