中文
English
STK0380D-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
**STK0380D-VB** is a single N-channel MOSFET in TO252 package, designed for high voltage applications. The drain-source withstand voltage (VDS) of this MOSFET is up to 800V, which is suitable for power switching applications that require high withstand voltage. Its maximum drain current (ID) is 2A, which is suitable for low-power and medium-power power conversion systems. **STK0380D-VB** adopts **SJ_Multi-EPI** technology, has a low on-resistance (RDS(ON) = 2600mΩ) and excellent switching performance, which can effectively reduce power loss and is suitable for various power supply and power management applications.
The high withstand voltage and low on-resistance of this MOSFET make it widely used in high-efficiency power electronic modules and systems, especially in the design of power supply, inverter, battery management and high-voltage power supply.
**STK0380D-VB** is a single N-channel MOSFET in TO252 package, designed for high voltage applications. The drain-source withstand voltage (VDS) of this MOSFET is up to 800V, which is suitable for power switching applications that require high withstand voltage. Its maximum drain current (ID) is 2A, which is suitable for low-power and medium-power power conversion systems. **STK0380D-VB** adopts **SJ_Multi-EPI** technology, has a low on-resistance (RDS(ON) = 2600mΩ) and excellent switching performance, which can effectively reduce power loss and is suitable for various power supply and power management applications.
The high withstand voltage and low on-resistance of this MOSFET make it widely used in high-efficiency power electronic modules and systems, especially in the design of power supply, inverter, battery management and high-voltage power supply.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Package type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Drain-source withstand voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2600mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Maximum power loss**: Approximately 2W (depending on operating conditions)
- **Technology**: SJ_Multi-EPI
- **Maximum gate-source voltage (VGS(max))**: ±30V
- **Operating temperature range**: -55°C to +150°C
- **Gate Charge**: Typical gate charge is 35nC (VDS = 400V, ID = 2A, VGS = 10V)
- **Switching Time**: Suitable for medium-speed switching applications
- **Reverse Recovery Time**: Suitable for high-efficiency conversion systems
- **Reverse Current (IR)**: Low reverse leakage current, suitable for high-efficiency power applications
- **Package type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Drain-source withstand voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2600mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Maximum power loss**: Approximately 2W (depending on operating conditions)
- **Technology**: SJ_Multi-EPI
- **Maximum gate-source voltage (VGS(max))**: ±30V
- **Operating temperature range**: -55°C to +150°C
- **Gate Charge**: Typical gate charge is 35nC (VDS = 400V, ID = 2A, VGS = 10V)
- **Switching Time**: Suitable for medium-speed switching applications
- **Reverse Recovery Time**: Suitable for high-efficiency conversion systems
- **Reverse Current (IR)**: Low reverse leakage current, suitable for high-efficiency power applications
Domain and module applications：
3. Applications and modules:
**STK0380D-VB**'s high voltage withstand capability and low on-resistance make it ideal for power electronics applications that require high voltage and low power. The following are typical application areas of this MOSFET:
- **Power conversion and power management**:
Due to its high voltage withstand capability, **STK0380D-VB** is very suitable for high voltage power supply and power conversion systems. In AC-DC and DC-DC converters, it can effectively switch voltage and current to achieve efficient power conversion and reduce energy loss. This MOSFET is suitable for various types of power supplies, such as switching power supplies, inverters, and power factor correction circuits.
- **Battery Management System (BMS)**:
In battery management systems, **STK0380D-VB** can be used as an efficient switching device to help achieve precise battery charge and discharge control. Due to its high voltage withstand and low on-resistance, it can provide stable switching performance at high battery voltages, ensuring the efficiency of the system and the long life of the battery. Suitable for power tools, electric vehicles and portable battery-driven devices.
- **Solar Inverters and Renewable Energy Systems**:
**STK0380D-VB** is suitable for power conversion and voltage regulation in solar inverters and other renewable energy systems. It can operate stably at higher voltages, help achieve efficient DC to AC conversion, and ensure long-term stable operation of inverters and power modules.
- **High Voltage Power Switch**:
This MOSFET can be used as a high-voltage switching device and is suitable for power switching applications that need to withstand higher voltages. **STK0380D-VB** is suitable for switching power supplies, protection circuits and medium and high power electrical control systems in power systems.
- **Motor Drive**:
**STK0380D-VB** is also suitable for motor control and drive systems, especially in high voltage and low current application scenarios. It can be used as a switching element in the drive circuit to effectively regulate the start, stop and speed regulation of the motor.
- **General Power Electronics Applications**:
In other general power electronics applications, **STK0380D-VB** can be used as a switching element to support high voltage power conversion and control. Suitable for small power tools, electrical control equipment and other high voltage power conversion modules.
**STK0380D-VB**'s high voltage withstand capability and low on-resistance make it ideal for power electronics applications that require high voltage and low power. The following are typical application areas of this MOSFET:
- **Power conversion and power management**:
Due to its high voltage withstand capability, **STK0380D-VB** is very suitable for high voltage power supply and power conversion systems. In AC-DC and DC-DC converters, it can effectively switch voltage and current to achieve efficient power conversion and reduce energy loss. This MOSFET is suitable for various types of power supplies, such as switching power supplies, inverters, and power factor correction circuits.
- **Battery Management System (BMS)**:
In battery management systems, **STK0380D-VB** can be used as an efficient switching device to help achieve precise battery charge and discharge control. Due to its high voltage withstand and low on-resistance, it can provide stable switching performance at high battery voltages, ensuring the efficiency of the system and the long life of the battery. Suitable for power tools, electric vehicles and portable battery-driven devices.
- **Solar Inverters and Renewable Energy Systems**:
**STK0380D-VB** is suitable for power conversion and voltage regulation in solar inverters and other renewable energy systems. It can operate stably at higher voltages, help achieve efficient DC to AC conversion, and ensure long-term stable operation of inverters and power modules.
- **High Voltage Power Switch**:
This MOSFET can be used as a high-voltage switching device and is suitable for power switching applications that need to withstand higher voltages. **STK0380D-VB** is suitable for switching power supplies, protection circuits and medium and high power electrical control systems in power systems.
- **Motor Drive**:
**STK0380D-VB** is also suitable for motor control and drive systems, especially in high voltage and low current application scenarios. It can be used as a switching element in the drive circuit to effectively regulate the start, stop and speed regulation of the motor.
- **General Power Electronics Applications**:
In other general power electronics applications, **STK0380D-VB** can be used as a switching element to support high voltage power conversion and control. Suitable for small power tools, electrical control equipment and other high voltage power conversion modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
