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STK0160I-VB Product details
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Product Introduction
**STK0160I-VB** is a **single N-channel MOSFET** in a **TO251** package, designed for high voltage applications, with a **650V** maximum drain-source voltage (VDS) and a **2A** maximum drain current (ID). This MOSFET uses **Plannar technology**, and its **RDS(ON)** is **4300mΩ** @ **VGS=10V**, which is suitable for power applications requiring higher drain-source voltage and medium current. It has high switching speed and reliability, and is widely used in power conversion, drive modules and other high-voltage power supply applications. STK0160I-VB is suitable for occasions requiring higher drain-source voltage (such as 650V) and lower current (such as 2A), and can provide stable operating performance and lower power consumption.
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**STK0160I-VB** is a **single N-channel MOSFET** in a **TO251** package, designed for high voltage applications, with a **650V** maximum drain-source voltage (VDS) and a **2A** maximum drain current (ID). This MOSFET uses **Plannar technology**, and its **RDS(ON)** is **4300mΩ** @ **VGS=10V**, which is suitable for power applications requiring higher drain-source voltage and medium current. It has high switching speed and reliability, and is widely used in power conversion, drive modules and other high-voltage power supply applications. STK0160I-VB is suitable for occasions requiring higher drain-source voltage (such as 650V) and lower current (such as 2A), and can provide stable operating performance and lower power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
| **Parameter category** | **Parameter value** | **Description** |
|--------------------------|----------------------------------|------------------------------------------------------------|
| **Package type** | TO251 | Uses **TO251** package, suitable for higher voltage applications, with good thermal management performance|
| **Channel configuration** | Single-N-Channel | Single-N-Channel, suitable for applications requiring medium current|
| **Maximum drain-source voltage (VDS)** | 650V | Can withstand a maximum drain-source voltage of **650V**, suitable for medium and high voltage applications|
| **Maximum gate drive voltage (VGS)** | ±30V | Supports a wide gate drive voltage range and provides flexible switching control|
| **Threshold voltage (Vth)** | 3.5V | The lower threshold voltage allows the MOSFET to be turned on at a lower gate voltage|
| **On-resistance (RDS(ON))** | 4300mΩ @ VGS=10V | **4300mΩ** on-resistance is suitable for higher drain-source voltage applications, but higher RDS(ON) makes it suitable for low current applications|
| **Maximum drain current (ID)** | 2A | Maximum drain current of **2A** is suitable for power modules and switching circuits with medium power requirements|
| **Technology type** | Plannar | Uses **Plannar technology** to provide stable performance and optimize on-resistance and switching performance|
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| **Parameter category** | **Parameter value** | **Description** |
|--------------------------|----------------------------------|------------------------------------------------------------|
| **Package type** | TO251 | Uses **TO251** package, suitable for higher voltage applications, with good thermal management performance|
| **Channel configuration** | Single-N-Channel | Single-N-Channel, suitable for applications requiring medium current|
| **Maximum drain-source voltage (VDS)** | 650V | Can withstand a maximum drain-source voltage of **650V**, suitable for medium and high voltage applications|
| **Maximum gate drive voltage (VGS)** | ±30V | Supports a wide gate drive voltage range and provides flexible switching control|
| **Threshold voltage (Vth)** | 3.5V | The lower threshold voltage allows the MOSFET to be turned on at a lower gate voltage|
| **On-resistance (RDS(ON))** | 4300mΩ @ VGS=10V | **4300mΩ** on-resistance is suitable for higher drain-source voltage applications, but higher RDS(ON) makes it suitable for low current applications|
| **Maximum drain current (ID)** | 2A | Maximum drain current of **2A** is suitable for power modules and switching circuits with medium power requirements|
| **Technology type** | Plannar | Uses **Plannar technology** to provide stable performance and optimize on-resistance and switching performance|
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Domain and module applications：
Application fields and module examples
1. **High-voltage power converter**
- **Application scenario**: STK0160I-VB can be used for **high-voltage power converter**, such as **AC-DC power converter**, **DC-DC converter** and **power inverter**.
- **Description**: This MOSFET can withstand a drain-source voltage of **650V** and is suitable for use in medium and high voltage power conversion applications. Although its on-resistance (RDS(ON)) is relatively high, it is suitable for applications with lower currents, especially in environments that require **high drain-source voltage** and **stable switching performance**.
2. **Power switch module**
- **Application scenario**: Suitable for **power switch modules**, such as **motor drive systems**, **power regulation circuits**, etc.
- **Description**: The **low gate drive voltage** and **higher drain-source voltage** of the STK0160I-VB make it stable in these modules and suitable for controlling power flow, and despite its lower current limit, it performs well in low-power drive applications.
3. **Uninterruptible Power Supply (UPS)**
- **Application Scenario**: It can be used in the power conditioning module of the **Uninterruptible Power Supply (UPS)** system.
- **Description**: The **650V** drain-source voltage and **2A** drain current of this MOSFET make it suitable for the power management and power switching parts in the UPS system, capable of reliable switching operations in high voltage environments.
4. **Switching Power Supply**
- **Application Scenario**: The STK0160I-VB can be used in **switching power supplies**, such as **switching power adapters** and **power management units (PMUs)**.
- **Description**: The high **VDS (650V)** and medium **ID (2A)** of this MOSFET make it suitable for switching power supplies that require higher drain-source voltages. Despite its high on-resistance, it is capable of handling high-voltage applications with lower currents.
5. **Electronic Load and Battery Management**
- **Application Scenario**: This MOSFET is suitable for **electronic load**, **battery charge management system**, **battery discharge protection**, etc.
- **Description**: The **low threshold voltage (Vth)** and **high VDS (650V)** of STK0160I-VB can play a role in battery management systems that require switch control, providing reliable battery protection and energy management functions.
6. **Home Appliances and Industrial Electrical Equipment**
- **Application Scenario**: STK0160I-VB can be used in the power management and switch control parts of **home appliances** or **industrial electrical control systems**.
- **Description**: Due to its ability to withstand high voltage and provide stable switching performance, this MOSFET is suitable for home appliances such as air conditioners, power tools and other equipment to control the flow of power and maintain stable electrical performance.
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1. **High-voltage power converter**
- **Application scenario**: STK0160I-VB can be used for **high-voltage power converter**, such as **AC-DC power converter**, **DC-DC converter** and **power inverter**.
- **Description**: This MOSFET can withstand a drain-source voltage of **650V** and is suitable for use in medium and high voltage power conversion applications. Although its on-resistance (RDS(ON)) is relatively high, it is suitable for applications with lower currents, especially in environments that require **high drain-source voltage** and **stable switching performance**.
2. **Power switch module**
- **Application scenario**: Suitable for **power switch modules**, such as **motor drive systems**, **power regulation circuits**, etc.
- **Description**: The **low gate drive voltage** and **higher drain-source voltage** of the STK0160I-VB make it stable in these modules and suitable for controlling power flow, and despite its lower current limit, it performs well in low-power drive applications.
3. **Uninterruptible Power Supply (UPS)**
- **Application Scenario**: It can be used in the power conditioning module of the **Uninterruptible Power Supply (UPS)** system.
- **Description**: The **650V** drain-source voltage and **2A** drain current of this MOSFET make it suitable for the power management and power switching parts in the UPS system, capable of reliable switching operations in high voltage environments.
4. **Switching Power Supply**
- **Application Scenario**: The STK0160I-VB can be used in **switching power supplies**, such as **switching power adapters** and **power management units (PMUs)**.
- **Description**: The high **VDS (650V)** and medium **ID (2A)** of this MOSFET make it suitable for switching power supplies that require higher drain-source voltages. Despite its high on-resistance, it is capable of handling high-voltage applications with lower currents.
5. **Electronic Load and Battery Management**
- **Application Scenario**: This MOSFET is suitable for **electronic load**, **battery charge management system**, **battery discharge protection**, etc.
- **Description**: The **low threshold voltage (Vth)** and **high VDS (650V)** of STK0160I-VB can play a role in battery management systems that require switch control, providing reliable battery protection and energy management functions.
6. **Home Appliances and Industrial Electrical Equipment**
- **Application Scenario**: STK0160I-VB can be used in the power management and switch control parts of **home appliances** or **industrial electrical control systems**.
- **Description**: Due to its ability to withstand high voltage and provide stable switching performance, this MOSFET is suitable for home appliances such as air conditioners, power tools and other equipment to control the flow of power and maintain stable electrical performance.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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