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STI90N4F3-VB Product details

Product introduction:

1. STI90N4F3-VB Product Introduction

STI90N4F3-VB is a single N-channel MOSFET in TO262 package with extremely low on-resistance and excellent current carrying capacity, designed for high-performance power management and power conversion applications. The MOSFET has a drain-source voltage (VDS) of 40V, a maximum gate-source voltage (VGS) of ±20V, a turn-on voltage (Vth) of 2.5V, and an on-resistance (RDS(ON)) as low as 5mΩ@VGS=10V, which can provide extremely low power loss at high currents. Its maximum drain current (ID) is 100A, making it excellent in high-current, high-efficiency applications. The STI90N4F3-VB is manufactured using Trench technology and can provide stable performance in high-frequency and high-efficiency working environments. This MOSFET is very suitable for applications requiring high power density and low on-resistance, especially in power conversion, drive systems, and energy management.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO262 Single-N 40V 2.5V 100A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO262 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO262 Single-N 40V 2.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO262 Single-N 40V 2.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO262 Single-N
2. Detailed explanation of STI90N4F3-VB parameters

| **Parameter** | **Description** |
|-------------------------|--------------------------------------------------------------|
| **Package type** | TO262 |
| **Configuration** | Single-N-Channel |
| **Drain-source voltage (VDS)** | 40V |
| **Gate-source voltage (VGS)** | ±20V |
| **Throughput voltage (Vth)** | 2.5V |
| **On-resistance (RDS(ON))** | 5mΩ @ VGS=10V |
| **Drain current (ID)** | 100A |
| **Maximum power consumption (Ptot)** | Varies according to heat dissipation conditions, usually tens of watts |
| **Operating temperature range** | -55°C to +150°C |
| **Package Dimensions** | TO262 package for high current, high power conversion applications|
| **Technology** | Trench Technology|

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Domain and module applications:

3. Application fields and module examples

1. **High-efficiency DC-DC converters**
The extremely low on-resistance (RDS(ON)=5mΩ) of STI90N4F3-VB makes it very suitable for use in high-efficiency DC-DC converters, especially for high-current power conversion. This MOSFET performs well in high-current, high-power applications, can minimize power loss, and provide efficient and stable output, especially for battery management systems, server power supplies, and industrial control power systems.

2. **Power tool power supply**
STI90N4F3-VB can be used in power tool power modules to provide high-efficiency and high-current current control. Its drain current carrying capacity of up to 100A enables it to drive high-power motors and provide reliable power output, while reducing energy loss through the characteristics of low RDS(ON). In the power supply of high-power equipment such as electric tools such as electric drills and electric saws, STI90N4F3-VB can effectively improve the efficiency of the system and extend its service life.

3. **Battery Management System (BMS)**
In the battery management system, the STI90N4F3-VB acts as a switching device to efficiently control the charging and discharging process of the battery. Its low on-resistance can minimize energy loss and ensure high efficiency of the battery during the charging and discharging process. Especially in electric vehicles and mobile energy devices, this MOSFET helps to improve the overall performance and life of the battery.

4. **Electric Vehicles and Electric Vehicles**
STI90N4F3-VB is also widely used in electric vehicles (EV) and electric vehicles, especially in motor drive and battery charging modules, which can handle high currents and ensure system stability. Due to its low RDS(ON) and high current carrying capacity, the STI90N4F3-VB can effectively improve the overall power system efficiency of electric vehicles, reduce energy losses and increase driving range.

5. **Power Inverter**
In renewable energy power generation systems such as solar photovoltaic power generation and wind power generation, STI90N4F3-VB can be used as a switching element of the power inverter, responsible for converting DC power into AC power. Its high current capability and low on-resistance enable it to reduce power loss and improve energy conversion efficiency during high-efficiency inverter processes. Whether in large inverter systems or small residential inverters, STI90N4F3-VB can provide stable and reliable performance.

6. **High-efficiency LED driver**
STI90N4F3-VB can be widely used in LED driver power supplies, especially in high-power lighting systems. Due to its low RDS(ON), this MOSFET can effectively reduce energy loss and improve the efficiency of the driver power supply. It is very suitable for commercial lighting, industrial lighting, and high-power LED lighting systems, providing stable and long-lasting lighting output while improving the overall energy efficiency of the system.

7. **UPS System (Uninterruptible Power Supply)**
In the Uninterruptible Power Supply (UPS) system, STI90N4F3-VB is used as a high-current switching element to effectively realize power conversion and management. Its high current capability and low on-resistance enable it to maintain low power loss under high load conditions, ensuring stable power supply to the UPS system during power outages and ensuring continuous operation of important equipment.

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STI90N4F3-VB is a MOSFET with excellent performance, widely used in high-efficiency power conversion, power tools, battery management systems, electric vehicles, power inverters, LED driver power supplies and other fields. With its low on-resistance and high current carrying capacity, this MOSFET provides an ideal solution for various high-power, high-efficiency applications, helping to achieve higher energy efficiency and lower energy loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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