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STI85NF55-VB Product details
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Product Introduction
**STI85NF55-VB** is a high-performance **Single-N-Channel MOSFET**, packaged in **TO262**, designed for high-current, high-efficiency power control and switching applications. This model provides extremely low **on-resistance** (RDS(ON)). When **VGS=10V**, the on-resistance is only **6mΩ**, which gives it extremely low power loss in high-current applications. Its **maximum drain voltage (VDS)** is **60V**, and its **maximum drain current (ID)** can reach **120A**, which is suitable for high-load, high-power applications. Combined with **Trench** technology, this MOSFET has fast switching performance and high efficiency, can meet the needs of high-current, high-frequency switching, and is widely used in power management, industrial drives, automotive electronics and other fields.
**STI85NF55-VB** is a high-performance **Single-N-Channel MOSFET**, packaged in **TO262**, designed for high-current, high-efficiency power control and switching applications. This model provides extremely low **on-resistance** (RDS(ON)). When **VGS=10V**, the on-resistance is only **6mΩ**, which gives it extremely low power loss in high-current applications. Its **maximum drain voltage (VDS)** is **60V**, and its **maximum drain current (ID)** can reach **120A**, which is suitable for high-load, high-power applications. Combined with **Trench** technology, this MOSFET has fast switching performance and high efficiency, can meet the needs of high-current, high-frequency switching, and is widely used in power management, industrial drives, automotive electronics and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Main features:
- **Low on-resistance**: At **VGS=10V**, the on-resistance is only **6mΩ**, which significantly reduces power loss and improves efficiency.
- **High current carrying capacity**: The maximum drain current is **120A**, suitable for high current loads and high power management.
- **High switching performance**: Thanks to **Trench** technology, it has low switching losses and high switching speed.
- **Withstand voltage capability**: The maximum drain-source voltage is **60V**, suitable for medium and low voltage switching and power control.
- **Package type**: Using **TO262** package, it is suitable for applications with high current and large heat dissipation requirements.
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- **Low on-resistance**: At **VGS=10V**, the on-resistance is only **6mΩ**, which significantly reduces power loss and improves efficiency.
- **High current carrying capacity**: The maximum drain current is **120A**, suitable for high current loads and high power management.
- **High switching performance**: Thanks to **Trench** technology, it has low switching losses and high switching speed.
- **Withstand voltage capability**: The maximum drain-source voltage is **60V**, suitable for medium and low voltage switching and power control.
- **Package type**: Using **TO262** package, it is suitable for applications with high current and large heat dissipation requirements.
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Domain and module applications：
Detailed parameter description
| **Parameter** | **Value** | **Unit** | **Description** |
|--------------------|-----------------------------------|---------|--------------------------------------------------------|
| **Package Type** | TO262 | — | High current package, suitable for high power density applications, providing better heat dissipation capabilities. |
| **Configuration** | Single-N-Channel | — | Single N-channel MOSFET, suitable for high-efficiency switch control and power management. |
| **Drain-Source Voltage (VDS)** | 60V | V | Maximum drain-source voltage, suitable for medium and low voltage power management and switching applications. |
| **Gate-Source Voltage (VGS)** | ±20V | V | Supports gate voltage of ±20V, suitable for applications with different gate drive voltages. |
| **Threshold Voltage (Vth)** | 2.5V | V | Turn-on threshold voltage, below which the MOSFET will be in the off state. |
| **On-resistance (RDS(ON))** | 6mΩ@VGS=10V | Ω | On-resistance at **VGS=10V**, providing low power consumption and high efficiency, suitable for high current load. |
| **Drain current (ID)** | 120A | A | Maximum drain current, suitable for high current load and power control applications. |
| **Technology** | Trench | — | Adopts Trench technology to provide low on-resistance and high efficiency switching performance. |
| **Operating temperature range** | -55 ~ 150°C | °C | Wide temperature range, suitable for various industrial and high temperature environment applications. |
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| **Parameter** | **Value** | **Unit** | **Description** |
|--------------------|-----------------------------------|---------|--------------------------------------------------------|
| **Package Type** | TO262 | — | High current package, suitable for high power density applications, providing better heat dissipation capabilities. |
| **Configuration** | Single-N-Channel | — | Single N-channel MOSFET, suitable for high-efficiency switch control and power management. |
| **Drain-Source Voltage (VDS)** | 60V | V | Maximum drain-source voltage, suitable for medium and low voltage power management and switching applications. |
| **Gate-Source Voltage (VGS)** | ±20V | V | Supports gate voltage of ±20V, suitable for applications with different gate drive voltages. |
| **Threshold Voltage (Vth)** | 2.5V | V | Turn-on threshold voltage, below which the MOSFET will be in the off state. |
| **On-resistance (RDS(ON))** | 6mΩ@VGS=10V | Ω | On-resistance at **VGS=10V**, providing low power consumption and high efficiency, suitable for high current load. |
| **Drain current (ID)** | 120A | A | Maximum drain current, suitable for high current load and power control applications. |
| **Technology** | Trench | — | Adopts Trench technology to provide low on-resistance and high efficiency switching performance. |
| **Operating temperature range** | -55 ~ 150°C | °C | Wide temperature range, suitable for various industrial and high temperature environment applications. |
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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