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STI270N4F3-VB Product details
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1. STI270N4F3-VB Product Introduction
STI270N4F3-VB is a single N-channel MOSFET in TO262 package, designed for high-efficiency, high-current applications. With a drain-source voltage (VDS) of 40V, the device is ideal for low to medium voltage power management applications. With a maximum drain current (ID) of 150A, it can withstand large current loads and is particularly suitable for high-power switching applications. The on-resistance (RDS(ON)) of STI270N4F3-VB is very low, only 1.7mΩ @ VGS = 10V, which enables it to maintain low power consumption and reduce heat generation when high current flows. This MOSFET uses Trench technology to further improve switching efficiency and reduce losses. Due to its higher current capability and lower on-resistance, STI270N4F3-VB is an ideal switching device for high-performance power supplies, industrial equipment, and electric vehicles.
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STI270N4F3-VB is a single N-channel MOSFET in TO262 package, designed for high-efficiency, high-current applications. With a drain-source voltage (VDS) of 40V, the device is ideal for low to medium voltage power management applications. With a maximum drain current (ID) of 150A, it can withstand large current loads and is particularly suitable for high-power switching applications. The on-resistance (RDS(ON)) of STI270N4F3-VB is very low, only 1.7mΩ @ VGS = 10V, which enables it to maintain low power consumption and reduce heat generation when high current flows. This MOSFET uses Trench technology to further improve switching efficiency and reduce losses. Due to its higher current capability and lower on-resistance, STI270N4F3-VB is an ideal switching device for high-performance power supplies, industrial equipment, and electric vehicles.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 3.3V | 150A | 1.7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 3.3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 3.3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
2. STI270N4F3-VB Detailed parameter description
| **Parameter category** | **Parameter value** | **Description** |
|---------------------|---------------------------|--------------------------------------------|
| **Package** | TO262 | TO262 package is suitable for high current and high power applications and has good heat dissipation capability|
| **Configuration** | Single-N-Channel | Single N-channel MOSFET, suitable for high current switch control|
| **Drain-source voltage (VDS)** | 40V | Suitable for low voltage applications, especially for power management systems|
| **Gate-source voltage (VGS)** | ±20V | Supports a wide range of gate drive voltages, suitable for a variety of control schemes|
| **Throw-on voltage (Vth)** | 3.3V | Moderate turn-on voltage, suitable for common drive circuits|
| **On-resistance (RDS(ON))** | 1.7mΩ @ VGS = 10V | Very low on-resistance for high efficiency, high current switching|
| **Maximum drain current (ID)** | 150A | Very high drain current capability for high current load applications|
| **Technology** | Trench | Trench technology for low switching losses and high efficiency|
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| **Parameter category** | **Parameter value** | **Description** |
|---------------------|---------------------------|--------------------------------------------|
| **Package** | TO262 | TO262 package is suitable for high current and high power applications and has good heat dissipation capability|
| **Configuration** | Single-N-Channel | Single N-channel MOSFET, suitable for high current switch control|
| **Drain-source voltage (VDS)** | 40V | Suitable for low voltage applications, especially for power management systems|
| **Gate-source voltage (VGS)** | ±20V | Supports a wide range of gate drive voltages, suitable for a variety of control schemes|
| **Throw-on voltage (Vth)** | 3.3V | Moderate turn-on voltage, suitable for common drive circuits|
| **On-resistance (RDS(ON))** | 1.7mΩ @ VGS = 10V | Very low on-resistance for high efficiency, high current switching|
| **Maximum drain current (ID)** | 150A | Very high drain current capability for high current load applications|
| **Technology** | Trench | Trench technology for low switching losses and high efficiency|
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Domain and module applications：
3. Application fields and modules
#### 1. **Electric vehicle (EV) power management**
STI270N4F3-VB is particularly suitable for use in power management modules for electric vehicles due to its high current carrying capacity (150A) and low on-resistance (1.7mΩ). In the battery management system (BMS), electric drive motor control and charging system of electric vehicles, this MOSFET can be used for efficient power conversion, charging and energy distribution. Its low on-resistance can reduce energy loss and improve system efficiency, meeting the requirements of electric vehicles for high efficiency and high reliability.
#### 2. **Power supply and DC-DC converter**
In efficient power supply systems, STI270N4F3-VB can also play an important role, especially in high-current DC-DC converters. Its 150A current carrying capacity enables it to provide stable performance under high power loads, while the low RDS(ON) helps reduce power loss during current flow and ensures efficient operation of the power system. This MOSFET is particularly suitable for applications such as server power supplies, communication power supplies, and industrial power supplies.
#### 3. **High-efficiency inverters**
STI270N4F3-VB can be widely used in inverter systems, especially those applications that require high efficiency and high current, such as power conversion in solar inverters and wind power generation systems. Its high current handling capability and low on-resistance are very suitable for inverter applications that require continuous large current flow. By optimizing the current conversion process, this MOSFET can significantly improve the efficiency of the inverter and reduce system heat generation, thereby improving the stability and life of the equipment.
#### 4. **Industrial drive systems and power tools**
STI270N4F3-VB is also suitable for drive systems and power tools in industrial automation. In these applications, high-current, high-efficiency switching control is critical. The 150A current carrying capacity of the STI270N4F3-VB enables it to handle the driving requirements of high-power power tools and industrial equipment, while the low RDS(ON) ensures high efficiency and less heat loss in these devices during long-term operation.
#### 5. **Power Amplifier**
The STI270N4F3-VB is suitable for high-power amplifier (PA) design, especially in wireless communication and broadcasting systems. Its high current capability and low on-resistance enable it to effectively drive high-power loads while ensuring high efficiency and low temperature rise of the system. This MOSFET can be used in RF amplifiers and other amplification systems that require high current and high efficiency.
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### Summary
The STI270N4F3-VB is a single N-channel MOSFET with excellent performance, designed for high-current applications. Its 40V drain-source voltage and 150A drain current capability are suitable for a variety of high-power, low-voltage power management and switch control applications. Through the optimization of Trench technology, this device has an extremely low on-resistance (1.7mΩ), which enables it to maintain low power loss when operating at high current. STI270N4F3-VB is widely used in electric vehicles, power supplies, inverters, industrial drive systems and power amplifiers, providing efficient and reliable switch control solutions.
#### 1. **Electric vehicle (EV) power management**
STI270N4F3-VB is particularly suitable for use in power management modules for electric vehicles due to its high current carrying capacity (150A) and low on-resistance (1.7mΩ). In the battery management system (BMS), electric drive motor control and charging system of electric vehicles, this MOSFET can be used for efficient power conversion, charging and energy distribution. Its low on-resistance can reduce energy loss and improve system efficiency, meeting the requirements of electric vehicles for high efficiency and high reliability.
#### 2. **Power supply and DC-DC converter**
In efficient power supply systems, STI270N4F3-VB can also play an important role, especially in high-current DC-DC converters. Its 150A current carrying capacity enables it to provide stable performance under high power loads, while the low RDS(ON) helps reduce power loss during current flow and ensures efficient operation of the power system. This MOSFET is particularly suitable for applications such as server power supplies, communication power supplies, and industrial power supplies.
#### 3. **High-efficiency inverters**
STI270N4F3-VB can be widely used in inverter systems, especially those applications that require high efficiency and high current, such as power conversion in solar inverters and wind power generation systems. Its high current handling capability and low on-resistance are very suitable for inverter applications that require continuous large current flow. By optimizing the current conversion process, this MOSFET can significantly improve the efficiency of the inverter and reduce system heat generation, thereby improving the stability and life of the equipment.
#### 4. **Industrial drive systems and power tools**
STI270N4F3-VB is also suitable for drive systems and power tools in industrial automation. In these applications, high-current, high-efficiency switching control is critical. The 150A current carrying capacity of the STI270N4F3-VB enables it to handle the driving requirements of high-power power tools and industrial equipment, while the low RDS(ON) ensures high efficiency and less heat loss in these devices during long-term operation.
#### 5. **Power Amplifier**
The STI270N4F3-VB is suitable for high-power amplifier (PA) design, especially in wireless communication and broadcasting systems. Its high current capability and low on-resistance enable it to effectively drive high-power loads while ensuring high efficiency and low temperature rise of the system. This MOSFET can be used in RF amplifiers and other amplification systems that require high current and high efficiency.
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### Summary
The STI270N4F3-VB is a single N-channel MOSFET with excellent performance, designed for high-current applications. Its 40V drain-source voltage and 150A drain current capability are suitable for a variety of high-power, low-voltage power management and switch control applications. Through the optimization of Trench technology, this device has an extremely low on-resistance (1.7mΩ), which enables it to maintain low power loss when operating at high current. STI270N4F3-VB is widely used in electric vehicles, power supplies, inverters, industrial drive systems and power amplifiers, providing efficient and reliable switch control solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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