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STH90N55F4-2-VB Product details
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Product Introduction
**STH90N55F4-2-VB** is a **single N-channel MOSFET**, packaged in **TO263**, suitable for **60V** maximum drain-source voltage (VDS) and **150A** maximum drain current (ID). This MOSFET uses **Trench technology** to provide **4mΩ ultra-low on-resistance (RDS(ON))** @ **VGS=10V**, which enables very low power losses in high current applications. This MOSFET has a high switching frequency and excellent thermal performance, making it ideal for efficient power control and conversion. The STH90N55F4-2-VB is mainly used in high current power management systems, power converters, and motor drives, and is an ideal choice for various power supply designs.
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**STH90N55F4-2-VB** is a **single N-channel MOSFET**, packaged in **TO263**, suitable for **60V** maximum drain-source voltage (VDS) and **150A** maximum drain current (ID). This MOSFET uses **Trench technology** to provide **4mΩ ultra-low on-resistance (RDS(ON))** @ **VGS=10V**, which enables very low power losses in high current applications. This MOSFET has a high switching frequency and excellent thermal performance, making it ideal for efficient power control and conversion. The STH90N55F4-2-VB is mainly used in high current power management systems, power converters, and motor drives, and is an ideal choice for various power supply designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
| **Parameter category** | **Parameter value** | **Description** |
|--------------------------|----------------------------------|------------------------------------------------------------|
| **Package type** | TO263 | Using **TO263** package, suitable for high power density applications and has good thermal management performance|
| **Channel configuration** | Single-N-Channel | Single-N-Channel, suitable for unipolar power supply and power conversion applications requiring high current drive|
| **Maximum drain-source voltage (VDS)** | 60V | Can withstand a maximum drain-source voltage of **60V**, suitable for medium voltage power management systems|
| **Maximum gate drive voltage (VGS)** | ±20V | Supports high gate drive voltage and provides sufficient switching operation range|
| **Threshold voltage (Vth)** | 3V | Lower switching threshold voltage is conducive to improving switching speed and operating flexibility|
| **On-resistance (RDS(ON))** | 4mΩ @ VGS=10V | Extremely low on-resistance (4mΩ) ensures low power loss, reduces heat generation and improves efficiency|
| **Maximum drain current (ID)** | 150A | Supports up to **150A** maximum drain current for high current load applications|
| **Technology type** | Trench | **Trench technology** provides lower on-resistance, optimizing MOSFET switching performance and efficiency|
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| **Parameter category** | **Parameter value** | **Description** |
|--------------------------|----------------------------------|------------------------------------------------------------|
| **Package type** | TO263 | Using **TO263** package, suitable for high power density applications and has good thermal management performance|
| **Channel configuration** | Single-N-Channel | Single-N-Channel, suitable for unipolar power supply and power conversion applications requiring high current drive|
| **Maximum drain-source voltage (VDS)** | 60V | Can withstand a maximum drain-source voltage of **60V**, suitable for medium voltage power management systems|
| **Maximum gate drive voltage (VGS)** | ±20V | Supports high gate drive voltage and provides sufficient switching operation range|
| **Threshold voltage (Vth)** | 3V | Lower switching threshold voltage is conducive to improving switching speed and operating flexibility|
| **On-resistance (RDS(ON))** | 4mΩ @ VGS=10V | Extremely low on-resistance (4mΩ) ensures low power loss, reduces heat generation and improves efficiency|
| **Maximum drain current (ID)** | 150A | Supports up to **150A** maximum drain current for high current load applications|
| **Technology type** | Trench | **Trench technology** provides lower on-resistance, optimizing MOSFET switching performance and efficiency|
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Domain and module applications：
Application fields and module examples
1. **Motor drive system**
- **Application scenario**: STH90N55F4-2-VB can be widely used in **power tools**, **electric vehicle drive system**, **industrial automation** and other motor control systems.
- **Description**: Due to its **high current capability (150A)** and **low on-resistance (4mΩ)**, this MOSFET can effectively drive high-power motors, reduce power loss and heat generation, and ensure smooth operation and higher efficiency of the motor.
2. **DC-DC converter**
- **Application scenario**: This MOSFET can be used for efficient **DC-DC power converters**, which are widely used in **battery charging systems**, **power transmission devices**, **solar inverters**, etc.
- **Description**: The **low RDS(ON)** characteristic of STH90N55F4-2-VB makes it have extremely low loss during high current conversion, and is suitable for power conversion systems that require efficient energy transmission.
3. **Power Management System**
- **Application Scenario**: It is suitable for power management modules in the fields of **power adapter**, **UPS (Uninterruptible Power System)**, **communication power**, etc.
- **Description**: Its **150A high current carrying capacity** and **low on-resistance** make this MOSFET suitable for use in high-power power supply systems, ensuring stable and efficient power output and reducing energy loss during power conversion.
4. **Power Amplifier**
- **Application Scenario**: In **audio power amplifier** or **RF power amplifier**, STH90N55F4-2-VB can be used as a **switching element** to improve the efficiency of power amplification.
- **Description**: The STH90N55F4-2-VB has a high **maximum current (150A)** and low on-resistance, which can support high-power current flow, ensuring stable operation of the amplifier and higher efficiency, especially in situations where high power output is required.
5. **Battery Management System (BMS)**
- **Application Scenario**: This MOSFET can be used for power switching and battery charge and discharge control in **Battery Management System (BMS)**.
- **Description**: The **low RDS(ON)** characteristics of the STH90N55F4-2-VB can reduce energy loss in battery management systems and improve the efficiency of battery charging and discharging. It is suitable for applications that require high current control, such as **electric vehicles** and **energy storage systems**.
6. **Power Inverter**
- **Application Scenario**: In **solar inverters** and **wind inverters**, this MOSFET can be used for efficient power conversion to support the use of renewable energy.
- **Description**: The **low on-resistance** and **high current carrying capacity** of STH90N55F4-2-VB make it suitable for efficient power conversion, which can reduce energy loss in low-voltage power inverters, improve overall conversion efficiency, and support green energy systems.
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1. **Motor drive system**
- **Application scenario**: STH90N55F4-2-VB can be widely used in **power tools**, **electric vehicle drive system**, **industrial automation** and other motor control systems.
- **Description**: Due to its **high current capability (150A)** and **low on-resistance (4mΩ)**, this MOSFET can effectively drive high-power motors, reduce power loss and heat generation, and ensure smooth operation and higher efficiency of the motor.
2. **DC-DC converter**
- **Application scenario**: This MOSFET can be used for efficient **DC-DC power converters**, which are widely used in **battery charging systems**, **power transmission devices**, **solar inverters**, etc.
- **Description**: The **low RDS(ON)** characteristic of STH90N55F4-2-VB makes it have extremely low loss during high current conversion, and is suitable for power conversion systems that require efficient energy transmission.
3. **Power Management System**
- **Application Scenario**: It is suitable for power management modules in the fields of **power adapter**, **UPS (Uninterruptible Power System)**, **communication power**, etc.
- **Description**: Its **150A high current carrying capacity** and **low on-resistance** make this MOSFET suitable for use in high-power power supply systems, ensuring stable and efficient power output and reducing energy loss during power conversion.
4. **Power Amplifier**
- **Application Scenario**: In **audio power amplifier** or **RF power amplifier**, STH90N55F4-2-VB can be used as a **switching element** to improve the efficiency of power amplification.
- **Description**: The STH90N55F4-2-VB has a high **maximum current (150A)** and low on-resistance, which can support high-power current flow, ensuring stable operation of the amplifier and higher efficiency, especially in situations where high power output is required.
5. **Battery Management System (BMS)**
- **Application Scenario**: This MOSFET can be used for power switching and battery charge and discharge control in **Battery Management System (BMS)**.
- **Description**: The **low RDS(ON)** characteristics of the STH90N55F4-2-VB can reduce energy loss in battery management systems and improve the efficiency of battery charging and discharging. It is suitable for applications that require high current control, such as **electric vehicles** and **energy storage systems**.
6. **Power Inverter**
- **Application Scenario**: In **solar inverters** and **wind inverters**, this MOSFET can be used for efficient power conversion to support the use of renewable energy.
- **Description**: The **low on-resistance** and **high current carrying capacity** of STH90N55F4-2-VB make it suitable for efficient power conversion, which can reduce energy loss in low-voltage power inverters, improve overall conversion efficiency, and support green energy systems.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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