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STH8NB90-VB Product details

Product introduction:

STH8NB90-VB Product Introduction

STH8NB90-VB is a high voltage, high efficiency single N-channel MOSFET in TO247 package, designed for applications requiring high voltage and high current. The device has a maximum drain-source voltage (VDS) of 900V, a maximum drain current (ID) of 9A, and a low on-resistance (RDS(ON)) of 750mΩ @ VGS = 10V. STH8NB90-VB uses advanced SJ_Multi-EPI technology to ensure good switching performance, low conduction losses and excellent thermal stability, making it very suitable for high voltage and high power electronic systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 900V 3.5V 9A 750mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 900V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 900V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
Detailed product parameter description

| **Parameter** | **Value** | **Description** |
|------------------------|-------------------------------------|------------------------------------------------------------|
| **Package Type** | TO247 | TO247 package, suitable for high power applications, with excellent heat dissipation and mechanical strength. |
| **Configuration** | Single N channel | Single N channel configuration, suitable for general power switching and high voltage control applications. |
| **Drain-Source Voltage (VDS)** | 900V | Maximum drain-source voltage is 900V, suitable for high voltage power systems and power management applications. |
| **Gate-Source Voltage (VGS)** | ±30V | Maximum gate-source voltage is ±30V, suitable for gate drive applications in a variety of power supplies and power management systems. |
| **Turning Voltage (Vth)** | 3.5V | The turning voltage is 3.5V, which is suitable for switching applications within the general control voltage range. |
| **On-resistance (RDS(ON))** | 750mΩ @ VGS = 10V | The on-resistance is 750mΩ, ensuring low conduction losses and suitable for high power load applications. |
| **Maximum Drain Current (ID)** | 9A | The maximum drain current is 9A, which is suitable for medium power and high voltage applications. |
| **Technology** | SJ_Multi-EPI | Using SJ_Multi-EPI technology, it has low on-resistance and good switching performance. |

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Domain and module applications:

Application areas and module examples

1. **High-voltage power management**
STH8NB90-VB is very suitable for high-voltage power management systems due to its high drain-source voltage of 900V. For example, it can be used in high-voltage DC-DC converters, AC-DC power converters, and provide efficient power conversion and current control. Low on-resistance ensures lower power loss, thereby improving the efficiency of the entire power system, especially in industrial equipment and server power supplies with large power supply requirements.

2. **Industrial motor drive**
In industrial automation and motor drive systems, STH8NB90-VB can be used as a power switching element to control the drive signal of a high-current motor. The MOSFET's 9A maximum drain current and 900V high withstand voltage characteristics are suitable for high-power applications such as motor drive and power conversion. By reducing power losses and increasing switching speeds, it can help motor systems work more efficiently.

3. **Inverters and Solar Panels**
The STH8NB90-VB is ideal for solar inverters, which can efficiently convert the DC power generated by solar panels into AC power. Due to its high withstand voltage and low conduction loss, it can improve the energy efficiency of solar inverters, reduce losses, and enhance the reliability of the system to adapt to environmental changes. It is suitable for high-power solar systems and other renewable energy equipment.

4. **Electric Vehicle (EV) Battery Management System**
In the battery management system (BMS) of electric vehicles, the STH8NB90-VB is suitable for controlling and monitoring battery charging and discharging. Its high voltage and high current capability enable it to operate stably under high current loads in the battery pack. The low on-resistance of this MOSFET ensures high efficiency and long operation of the battery system, helping to improve the battery's endurance and charging efficiency.

5. **UPS (Uninterruptible Power System)**
STH8NB90-VB is suitable for uninterruptible power supply (UPS) systems, and can provide stable backup power when power is interrupted. Its high current carrying capacity (9A) and high voltage resistance make it suitable for energy conversion under high load conditions, ensuring that the UPS system can provide stable power supply when power is interrupted. It is suitable for places that require high reliability, such as data centers, server rooms, and medical equipment.

6. **High-power power electronic drive**
In high-power power electronic equipment, STH8NB90-VB is a key switching element for power conversion. It can provide excellent high-voltage and high-current handling capabilities and is widely used in power electronic drive systems such as inverters, speed regulators, and high-power power modules. Its high voltage carrying capacity makes it particularly suitable for various high-power industrial electrical equipment.

7. **Household appliances and high-power consumer electronics**
In some high-power household appliances, such as air conditioners, refrigerators and high-efficiency induction cookers, STH8NB90-VB can be used in the power supply part to provide efficient and stable power conversion. Due to its good thermal management and current control capabilities, it can effectively improve the operating efficiency of household appliances and reduce energy consumption.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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