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STH85N15F4-2-VB Product details

Product introduction:

1. STH85N15F4-2-VB Product Introduction

STH85N15F4-2-VB is a single N-channel MOSFET in TO263 package with a drain-source voltage (VDS) of 150V and a gate-source voltage (VGS) of ±20V. The turn-on voltage (Vth) of this MOSFET is 3V, and it has a low on-resistance (RDS(ON)) of 7.5mΩ @VGS=10V, which enables it to have extremely low power loss and high efficiency performance in high current applications. Its maximum drain current (ID) is 128A, which is suitable for occasions requiring high current carrying capacity and low switching loss. The STH85N15F4-2-VB is manufactured using Trench technology and has excellent switching characteristics and thermal management capabilities, making it suitable for high-efficiency, high-power density power conversion systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 150V 3V 128A 7.5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 150V 3V 128A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 150V 3V 128A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
2. Detailed parameters of STH85N15F4-2-VB

| **Parameter** | **Description** |
|-------------------------|--------------------------------------------------------------|
| **Package type** | TO263 |
| **Configuration** | Single-N-Channel |
| **Drain-source voltage (VDS)** | 150V |
| **Gate-source voltage (VGS)** | ±20V |
| **Throughput voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 7.5mΩ @ VGS=10V |
| **Drain current (ID)** | 128A |
| **Power consumption (Ptot)** | Maximum power consumption depends on the heat dissipation conditions, usually tens of watts|
| **Operating temperature range** | -55°C to +150°C |
| **Package size** | TO263 package for high current, high power electronic systems|
| **Technology** | Trench technology|

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Domain and module applications:

III. Application fields and module examples

1. **High-efficiency DC-DC converters**
STH85N15F4-2-VB has a very low on-resistance (RDS(ON)), making it ideal for use in high-efficiency DC-DC converters. As the main switch, it is able to handle high currents, reduce power losses during transmission, and provide a stable output voltage. This makes it an ideal choice for high-efficiency power conversion systems, especially in power-intensive applications such as server power supplies, industrial automation power supplies, and battery management systems.

2. **Electric vehicle power systems**
In the power systems of electric vehicles, STH85N15F4-2-VB can be used in modules such as battery management, motor drive, and charging control. Its high current carrying capacity and low on-resistance enable it to provide efficient current switching in battery charging, inverters, and motor control. Especially in the charging system of electric vehicles, it can improve charging efficiency and reduce energy losses, thereby improving the overall endurance of the vehicle.

3. **Power Inverter**
The high power handling capability and low conduction loss of STH85N15F4-2-VB give it a significant advantage in power inverter applications. In renewable energy power generation systems such as photovoltaic power generation and wind power generation, MOSFETs can be used to convert DC power to AC power, and can operate stably under high current applications, reducing switching losses and heat accumulation. Its superior switching performance and high efficiency are particularly important in inverter design.

4. **Motor Drive System**
STH85N15F4-2-VB can be widely used in motor drive systems, especially motor drive modules in industrial robots and automation control equipment. Its high current carrying capacity makes it suitable for driving high-power motors, while its low on-resistance can effectively reduce energy losses during the drive process, thereby improving the overall efficiency of the system. In high-efficiency motor drives, STH85N15F4-2-VB can also be used in high-performance servo motors and brushless DC motor (BLDC) drives.

5. **Power Supply and UPS (Uninterruptible Power Supply)**
This MOSFET is widely used in high-power power management, especially in uninterruptible power supply (UPS) and power supply systems. STH85N15F4-2-VB can be used as a switching element to achieve efficient power conversion, ensuring the stability and reliability of load power supply. Its low on-resistance and high drain current handling capability enable it to perform well under high load conditions of power supply, ensuring efficient operation.

6. **High-power LED driver**
In high-power LED driver, STH85N15F4-2-VB can be used to control large currents and maintain low power losses. MOSFET can help LED driver reduce heat accumulation and power loss while providing stable current. It can efficiently drive high-power lighting modules and provide stable and long-lasting service in high-power LED lighting systems.

7. **Battery Management System (BMS)**
In a battery management system, the STH85N15F4-2-VB can be used as an efficient current switch during battery charging and discharging. Its low on-resistance and high current handling capability can effectively control the battery charging and discharging process, ensuring the safety and high efficiency of the battery pack. Especially in power tools, electric vehicles and other portable power management systems, the high efficiency of MOSFET can significantly improve the overall performance and service life of the battery.

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STH85N15F4-2-VB is an excellent performance MOSFET. With its low on-resistance and high current carrying capacity, it is widely used in high-efficiency power management systems, electric vehicles, power inverters, motor drives, UPS systems and other fields. It is an ideal choice for modern high-power electronic applications, providing stable and efficient current control, reducing power losses and improving the overall performance of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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