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STH80N10F7-2-VB Product details
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Product Introduction
**STH80N10F7-2-VB** is a high-performance **Single-N-Channel** MOSFET in a **TO263** package, designed for low-voltage, high-current applications. This model has an extremely low **on-resistance** (RDS(ON)). When **VGS=10V**, the on-resistance is **10mΩ**, and when **VGS=4.5V**, it is **23mΩ**, which can significantly reduce power loss and heat generation. Its **maximum drain voltage (VDS)** is **100V**, and its **maximum drain current (ID)** reaches **100A**, which is suitable for high-current, high-power density scenarios. Combined with **Trench** technology, this MOSFET provides excellent switching performance and high efficiency, and is widely used in power management, industrial drives, automotive electronics and other fields.
**STH80N10F7-2-VB** is a high-performance **Single-N-Channel** MOSFET in a **TO263** package, designed for low-voltage, high-current applications. This model has an extremely low **on-resistance** (RDS(ON)). When **VGS=10V**, the on-resistance is **10mΩ**, and when **VGS=4.5V**, it is **23mΩ**, which can significantly reduce power loss and heat generation. Its **maximum drain voltage (VDS)** is **100V**, and its **maximum drain current (ID)** reaches **100A**, which is suitable for high-current, high-power density scenarios. Combined with **Trench** technology, this MOSFET provides excellent switching performance and high efficiency, and is widely used in power management, industrial drives, automotive electronics and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Main features:
- **Low on-resistance**: At **VGS=10V**, the on-resistance is only **10mΩ**, and at **VGS=4.5V** it is **23mΩ**, which is suitable for applications with high efficiency and low power loss.
- **High current carrying capacity**: The maximum drain current is **100A**, which is suitable for application scenarios with high current load and power control.
- **High switching performance**: Thanks to **Trench** technology, MOSFET has fast switching characteristics and low loss, which is suitable for high-frequency applications.
- **Withstand voltage capability**: The maximum drain-source voltage is **100V**, which can achieve high current handling at relatively low voltage, and is widely used in various power supplies and drive systems.
- **Package type**: It adopts **TO263** package, which is suitable for high power and application environments requiring good heat dissipation performance.
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- **Low on-resistance**: At **VGS=10V**, the on-resistance is only **10mΩ**, and at **VGS=4.5V** it is **23mΩ**, which is suitable for applications with high efficiency and low power loss.
- **High current carrying capacity**: The maximum drain current is **100A**, which is suitable for application scenarios with high current load and power control.
- **High switching performance**: Thanks to **Trench** technology, MOSFET has fast switching characteristics and low loss, which is suitable for high-frequency applications.
- **Withstand voltage capability**: The maximum drain-source voltage is **100V**, which can achieve high current handling at relatively low voltage, and is widely used in various power supplies and drive systems.
- **Package type**: It adopts **TO263** package, which is suitable for high power and application environments requiring good heat dissipation performance.
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Domain and module applications：
Detailed parameter description
| **Parameter** | **Value** | **Unit** | **Description** |
|--------------------|-----------------------------------|---------|--------------------------------------------------------|
| **Package Type** | TO263 | — | Compact package for high power and heat dissipation applications. |
| **Configuration** | Single-N-Channel | — | Single N-channel MOSFET for high-efficiency switch control and power management. |
| **Drain-Source Voltage (VDS)** | 100V | V | Maximum drain-source voltage for low- to medium-voltage power management and switching applications. |
| **Gate-Source Voltage (VGS)** | ±20V | V | Supports gate voltages of ±20V for applications with different gate drive voltages. |
| **Threshold Voltage (Vth)** | 2.5V | V | Turn-on threshold voltage, at which the MOSFET begins to turn on. |
| **On-resistance (RDS(ON))** | 23mΩ@VGS=4.5V | Ω | On-resistance at **VGS=4.5V**, providing low power consumption and high efficiency. |
| | 10mΩ@VGS=10V | Ω | On-resistance at **VGS=10V**, ensuring low conduction loss and high efficiency. |
| **Drain current (ID)** | 100A | A | Maximum drain current, suitable for applications with high current load. |
| **Technology** | Trench | — | Adopts Trench technology to provide low on-resistance and high efficiency switching performance. |
| **Operating temperature range** | -55 ~ 150°C | °C | Wide temperature range, suitable for various industrial and high temperature environment applications. |
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| **Parameter** | **Value** | **Unit** | **Description** |
|--------------------|-----------------------------------|---------|--------------------------------------------------------|
| **Package Type** | TO263 | — | Compact package for high power and heat dissipation applications. |
| **Configuration** | Single-N-Channel | — | Single N-channel MOSFET for high-efficiency switch control and power management. |
| **Drain-Source Voltage (VDS)** | 100V | V | Maximum drain-source voltage for low- to medium-voltage power management and switching applications. |
| **Gate-Source Voltage (VGS)** | ±20V | V | Supports gate voltages of ±20V for applications with different gate drive voltages. |
| **Threshold Voltage (Vth)** | 2.5V | V | Turn-on threshold voltage, at which the MOSFET begins to turn on. |
| **On-resistance (RDS(ON))** | 23mΩ@VGS=4.5V | Ω | On-resistance at **VGS=4.5V**, providing low power consumption and high efficiency. |
| | 10mΩ@VGS=10V | Ω | On-resistance at **VGS=10V**, ensuring low conduction loss and high efficiency. |
| **Drain current (ID)** | 100A | A | Maximum drain current, suitable for applications with high current load. |
| **Technology** | Trench | — | Adopts Trench technology to provide low on-resistance and high efficiency switching performance. |
| **Operating temperature range** | -55 ~ 150°C | °C | Wide temperature range, suitable for various industrial and high temperature environment applications. |
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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